ROW DECODER Search Results

Contextual Info: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 256Mb Synchronous DRAM - Die Revision A APPLICATION SPEC # 29L0000.E36980 Engineering Change Number 13 ROW /1 1 COL / 2 BS 16Mb x 4 I/O x 4 Bank 13 ROW /1 0 COL / 2 BS (8Mb x 8 I/O x 4 Bank) Date E36980 13 ROW / 9 COL / 2 BS (4Mb x 16 I/O x 4 Bank)

AS4C16M16S

Abstract: 3MA18 AS4C16M16S-6TCN AS4C16M16S-7BCN AS4C16M16S-5TCN
Contextual Info: FEBRUARY 2011 AS4C16M16S 256Mb / 16M x 16 bit Synchronous DRAM SDRAM Alliance Memory Table 1. Key Specifications AS4C16M16S tCK3 Clock Cycle time (min.) tAC3 Access time from CLK (max.) tRAS Row Active time (min.) tRC Row Cycle time (min.) Features • •

Contextual Info: SM2405 - Enhanced SDRAM 512Kx32 ESDRAM Product Brief Features • 100% Function and Timing Compatible with JEDEC standard SDRAM • Pin Compatible with JEDEC Std. SGRAM • Integrated 8Kbit SRAM Row Cache per Bank • Synchronous Operation up to 150MHz • 24ns Row Access Latency, 10ns Column Latency

IS42VM83200D

Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42VM16800E

Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42VM81600E

Abstract: IS42VM16800E IS42VM32400E-75TL IS42VM16800E-75BLI
Contextual Info: IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES JUNE 2011 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

SM81600E

Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42SM32400E

Abstract: ACT1010 IS42SM81600E-7TLI MO-207 IS42SM16800E IS42RM81600E IS42SM16800E-6TLI
Contextual Info: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42S32160B

Abstract: is42s32160b-7tli IS45S32160B-7BLA2 IS42S32160B-75EBLI
Contextual Info: IS42S32160B IS45S32160B 16M x 32 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION FEBRUARY 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS42RM32800D

Contextual Info: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information JUNE 2008 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge

IS42S32400E-6TL

Abstract: IS42S32400E IS42S32400E-7T IS42S32400E-7TL IS45S32400E-7TLA1
Contextual Info: IS42S32400E IS45S32400E 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION JANUARY 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS42S32800d

Contextual Info: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION JUNE 2008 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW

IS42VM83200D

Abstract: TSOP II 54
Contextual Info: IS42VM83200D / IS42VM16160D / IS42VM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM APRIL 2012 FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3

Contextual Info: IS42S32160B IS45S32160B 16M x 32 512Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION JULY 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW

Contextual Info: IS42S83200D IS42S16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION DECEMBER 2007 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS42S32400B

Abstract: 42S32400B IS42S32400B-6BLI IS42S32400B-7TLI
Contextual Info: IS42S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION MARCH 2009

Contextual Info: ISSI IS42S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION OCTOBER 2006

Contextual Info: IS42S32200E 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge ADVANCED INFORMATION

Contextual Info: ISSI IS42S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION OCTOBER 2006

cq met t5

Contextual Info: ISSI IS42S32200AL 512K Bits x 32 Bits x 4 Banks 64-MBIT Low Power SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS42VM32160C

Contextual Info: IS42VM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full

IS45S32200E

Abstract: 45S32200E
Contextual Info: IS45S32200E 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge FEBRUARY 2008 OVERVIEW

IS45S16160G-6TLA1

Abstract: IS42S83200G-7TL is42s16160g-7tli IS45S16160G-7TLA1
Contextual Info: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 ADVANCED INFORMATION DECEMBER 2010 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge

IS42S32200l-7TLI

Abstract: IS45S32200L
Contextual Info: IS42S32200L IS45S32200L 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge