RG1G Search Results

ARM926T

Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
Contextual Info: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

sandisk eMMC 4.41

Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
Contextual Info: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009

rg2m

Contextual Info: RG2A to RG2M VISHAY Vishay Semiconductors Fast Sinterglass Switching Rectifier Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

ic power 22E

Abstract: 6 channel car audio amplifier circuit diagram power 22E power 22E IC
Contextual Info: NJM2795 Ground noise isolation Amplifier with Adjustable Differential Gain • GENERAL DESCRIPTION The NJM2795 is a ground noise isolation amplifier. It contains dual channel differential amplifier with Adjustable Differential Gain. It is developed for those car audio applications where long

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced

BO 243 A

Contextual Info: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

Contextual Info: RG1A THRU RG1M MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage- 50 to 1000 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded constructed rectifiers ♦ Glass passivated cavity-free junction in a D0-204AP package

DO-204AP

Abstract: DO204AP Package RG1 Series
Contextual Info: 3890137 GENL INSTR, POWER 3flT0137 000E435 h ^ T~OZ~ 3 ÿ :^ R G 1 S E R I E S -¿it , INIATURE G LASS PASSIVATED JUNCTION FAST SW ITCHING'RECTIFIER VOLTAGE RANGE SO to 1000 Volts CU RR EN T 1.0 Ampere DQ-204AP FEATURES • High temperature metallurgically bonded — no com ­

bcm 4330 programming Guide

Abstract: BCM 4334 bcm 4339 bcm 4330 sony cmos sensor imx 172 heart beat sensor using led and ldr philips 432 cnc controller philips 432 cnc digital stopwatch with 4026 cmos auo display HP printer
Contextual Info: MCIMX27 Multimedia Applications Processor Reference Manual MCIMX27RM Rev. 0.3 12/2008 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370

RG1G

Abstract: DO204AP DO-204AP
Contextual Info: RG1A THRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere * FEATURES ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

RG1G

Abstract: DO204AP DO-204AP
Contextual Info: RG1A thru RG1M Vishay Semiconductors formerly General Semiconductor Glass Passivated Fast Switching Rectifier * d e t n Features e t a P DO204AP 0.034 0.86 0.028 (0.71) DIA. 1.0 (25.4) MIN. Reverse Voltage 50 to 1000V Forward Current 1.0A • High temperature metallurgically bonded construction

rg1g diode

Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway

BY228-1500

Abstract: BY448 BYW84 BYW85 RG1J BY228 BYT62 BY458 BYW82 BYW83
Contextual Info: Sinterglass Rectifiers Part No. CrossReference BYW82 BYW83 BYW84 BYW85 BYW86 - Operating Temperature: -65 o C to 160oC Peak Fwd. Surge Current @ 8.3 ms Superimposed Max. Forward Voltage @ 25o C @ Rated Io Max. Reverse Current @ 25oC @ Rated PIV Package PIV V

Contextual Info: RG1ATHRU RG1M GLASS PASSIVATED FAST SWITCHING RECTIFIER Reverse Voltage - 50 to 1000 Volts Forward Current - 1 . 0 Ampere FEATURES ♦ High temperature metallurgical^ bonded construction ♦ Hermetically sealed package ♦ Glass passivated cavity-free junction

byw228

Abstract: MIL-STD-750 METHOD 2026 1N4949 RG3A DO-204AP BYw22 RG4M 1N4245 1N4249 1N5059
Contextual Info: GLASS PASSIVATED RECTIFIERS 0.2 AMPERE TO 3.0 AMPERES 50 VOLTS TO 1600 VOLTS INTRODUCTION TO GLASS RECTIFIERS The glass passivated rectifier is a hermetically sealed, cavity free, diffused junction rectifier with unsurpassed operating and surge capabilities at high temperature. An extremely pure specially developed glass applied in direct contact with the

shindengen mr5060

Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Contextual Info: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A

MDA2501

Abstract: pbl302 g1756 g1756 Diode MDA2502 MDA970A6 MDA3510 MDA2500 MDA3502 Bridge rectifier mda970a1
Contextual Info: DIOTEC ELECTRONICS CORP SflE D • Sfl^lG? ÜDOOlfl^ bTT WÊDIX Appendix IV: Cross Reference Tables <x^o\ _oZ_ SCHOTTKY BARRIER DIODES: INDUSTRY PART NO. 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 1N5823 1N5824 1N5825 MBR1035 MBR1045 MBR1050 MBR1060 MBR1090

DO-204AP

Contextual Info: RG1A to RG1M VISHAY Vishay Semiconductors Fast Sinterglass Diode \ Features • High temperature metallurgically bonded construction • Hermetically sealed package • Cavity-free glass passivated junction • 1.0 ampere operation at Tamb = 55 °C with no thermal runaway