RG 25 C 60 Search Results

RG2 DIODE

Abstract: RG2T-12V RG2-L-12V RG1T-12V RG1-12V RG2-L-24V RG1T-L-12V RG2 -VF-3 RG2-12V RG2-L-5V
Contextual Info: RG HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS 25 .984 19 .748 10.4 .409 25 .984 23 .906 1 Form C 9.9 .390 RG-RELAYS • Excellent high frequency characteristics| Isolation: 65 dB min. at 900 MHz Insertion loss: 1.0 dB max. (at 900 MHz) • Wide selection

Matsua Miniature Relay s3 12v

Abstract: TUBE Light Choke Coil Winding schematic diagram 48v dc motor winding smd diode 748 36A 8 pin SMD ic 2068 experiment for process control of sequential timer using 3 relay RG2L manual voltage stabilizer transformer winding data Matsushita Miniature Relay s3 12v matsua rg2
Contextual Info: RG HIGH FREQUENCY RG RELAYS WITH 1C AND 2C CONTACTS 25 .984 19 .748 10.4 .409 25 .984 23 .906 1 Form C 9.9 .390 RG-RELAYS • Excellent high frequency characteristics| Isolation: 65 dB min. at 900 MHz Insertion loss: 1.0 dB max. (at 900 MHz) • Wide selection

AR2500

Abstract: AR2512
Contextual Info: AR2500 thru AR2512 5VM5EMI SEMICONDUCTOR 25 Amps. Automotive Rectifier Diodes Voltage Range 50 to 1200 Volts Forward Current 25 Amperes Features ♦ ♦ ♦ ♦ ♦ H igh c u rre n t c a p a b ility High su rg e c u rre n t c a p a b ility High reliab ility

16N60

Abstract: 16n60 b
Contextual Info: Preliminary Data Sheet IXSA 16N60 IXSP 16N60 Low VCE sat IGBT1 LU ^C 25 V CE(sat)typ Short Circuit SOA Capability Symbol V CES Maximum Ratings Test Conditions v CES Tj = 25°C to 150°C 600 V VcoR T,J = 25°C to 150°C; RG E = 1 MCI 600 V VGES VG E M Continuous

40N120

Abstract: 40n120d 40N120D1 40N120 DATASHEET D-68623
Contextual Info: IXEH 40N120 IXEH 40N120D1 NPT3 IGBT IC25 = 60 A = 1200 V VCES VCE sat typ. = 2.4 V C C G TO-247 AD G G E E C IXEH 40N120 E IXEH 40N120D1 Features t IGBT Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A VCES = 1200 V VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C

60N120

Abstract: IXER60N120 80E10 igbt for induction heating ic IXER 60N120 20600t
Contextual Info: IXER 60N120 NPT3 IGBT IC25 = 95 A = 1200 V VCES VCE sat typ. = 2.1 V in ISOPLUS 247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 22 Ω; TVJ = 125°C

qe R 521 smd

Contextual Info: P re lim in a ry data <> IXGH20N60B IXGH20N60BS HiPerFAST IGBT Symbol Test Conditions V CES Tj = 25°C to 150°C Td = 25°C to 150°C; RGE = 1 Mi2 vC0R vGES •« Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms U ■c. SSOA RBSOA p c 600 600 VGE= 15 V, TVJ = 125°C, RG= 22 O

IC IGBT 25N120

Abstract: 25N120 25n120 IGBT IXEH 25N120D1 25N120D 25N120 ixys 25N120D1 FII30-12E
Contextual Info: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 t Conditions Maximum Ratings VCES TVJ = 25°C to 150°C u Symbol TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

Contextual Info: IGBT with Diode CES IXGH12N100U1 IXGH 12N100AU1 L O W V CE S« | High Speed OC Jj K g 1000 V 1000 V Test Conditions V VCGR Tj Tj v OES VGEM Continuous Transient ^C25 ^CM Tc =25=C Tc =90°C T c = 25° C, 1 ms SSOA (RBSOA VG6 = 1 5 V ,T VJ= 125° C, RG= 1 5 0 Q

25N120

Abstract: 25N120 ixys
Contextual Info: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

IC IGBT 25N120

Abstract: 25n120 IGBT 25N120 .25N12 25N120D1 FII30-12E 25N120D 25N12
Contextual Info: IXEH 25N120 IXEH 25N120D1 NPT3 IGBT IC25 = 36 A = 1200 V VCES VCE sat typ = 2.6 V C C G TO-247 AD G E G E IXEH 25N120 C IXEH 25N120D1 Symbol Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 68 Ω; TVJ = 125°C

24N50

Abstract: IXGH24N50BU1 IXGH24N60BU1
Contextual Info: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH

Contextual Info: IXER 35N120D1 NPT3 IGBT with Diode IC25 = 50A VCES =1200V VCE sat typ. = 2.2V in ISOPLUS247TM ISOPLUS 247TM E153432 C G G C E Isolated Backside E G = Gate Maximum Ratings VCES TVJ = 25°C to 150°C 1200 ± 20 TC = 25°C TC = 90°C ICM VCEK VGE = ±15 V; RG = 39 Ω; TVJ = 125°C

28N30

Contextual Info: ÖIXYS HiPerFAST IGBT IXGH 28N30 IXGT 28N30 V CES ^C2 V C E s a t ty p t fi(typ) 300 V 56 A 1.6 V 180 ns P re lim in a ry d ata sheet Symbol Test Conditions TO-247 AD T, = 25° C to 150° C 300 V T.J = 25° C to 150° C: RG „t = 1 MQ 300 V Continuous

SDF1NA60

Abstract: Power DIODE A30 a30 DIODE DIODE A30
Contextual Info: Æntran PRODUCT DEVICES,INC. N-CHANNEL ENHANCEMENT MOS FET 600V, ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL VDSS Drain-source Vo It. 1 Drain-Gate Vo 1tage VDGR (Rg s =1-OM o ) (1) Gate-Source Voltage VGS Continuous Drain Current Continuous ID iTc = 25'C)

DE375-0001

Abstract: DE375-102N10A nec 2401 400P DE-375-102N10
Contextual Info: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000

SDF10N60

Contextual Info: Æ lltro n PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER 600V, UNITS SYMBOL Drain-source Volt. l Drain-Gate Vo 1tage (Rg s =1.0M o ) (1) Gate-Source Voltage Con t inuous Drain Current Continuous (Tc = 25*C) Drain Current Pulsed(3)

DE150-201N09A

Abstract: 201N09 PIN diode SPICE model DE-150
Contextual Info: DE150-201N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200

DE275-201N25A

Contextual Info: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200

DE275-501N16A

Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
Contextual Info: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500

PIN diode SPICE model

Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
Contextual Info: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100

ECG1148

Abstract: vn1040
Contextual Info: PHILIPS E C G INC 17E $ • k,b53TSfi DOOMlbb 5 T - 7 4 -0 5 -0 1 E C G 1 1 4 8 AF POWER AMPLIFIER SPLIT POWER SUPPLY semiconductors (Unit i mm) EQUIVALENT CIRCUIT OUTPUT POWER! 50 Watts Typical (RL = 4 Ohm) 35 Watts Typical (R[, = 8 Ohm) OPERATION CHARACTERISTICS/Ta = 25°C, V c c = ±27 V , Rg = 600 Ohm,

Contextual Info: BIXYS IXGX 50N60AU1 HiPerFAST IGBT with Diode 600 V 75 A 2.7 V 275 ns CES ^C25 v* CE sat t'fi Preliminary data Maximum Ratings Symbol Test Conditions VC E S T j = 25cCto 150°C 600 V v CGR T,J = 25° C to 150° C; RG„L = 1 MQ 600 V VGES Continuous ±20