10n12
Abstract: 92CS-3780I ta9192 RFM10N15 RFM1 RFP mosfets ta9212 A9212 RFM10N12 RFP10N12
Contextual Info: Standard Power M OSFETs- -— -——- RFM10N12, RFM10N15, RFP I0N1I2, RFP10N15 N-Channel Enhancement-Mod Power Field-Effect Transistors — - File Number 1445 % 10 A, 120 V — 150 V
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23N06
Abstract: RFP23N06LE RF1S23N06LESM RF1S23N06LESM9A TB334 FP23N06L
Contextual Info: NS ESIG : D NEW ents FOR placem D E e END le R 9P3 OMM d Possib UF7641 19S3S C E H R 4 e NOT mmend LE: see e HUF76 6 o e c s e Data Sheet N : R 23 M RFP N06LES 3 2 RF1S 23A, 60V, 0.065 Ohm, Logic Level, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using
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uf76419fp23n06ta4916523n06+5rfp23n06lerf1s23n06lesmrf1s23n06lesm9atb334fp23n06l
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RFL1N08
Abstract: RFL1N10 RFP2N08 RFP2N10 92CS-W528 S4352
Contextual Info: Standard Power MOSFETs RFL1N08, RFL1N10, RFP2N08, RFP2N10 File N um ber 1385 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 80 and 100 V rDs on : 1.05CÎ and 1.2fi Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds
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RFP2N12L
Abstract: RFL1N12L RFL1N15L RFP2N15L rfp1n12
Contextual Info: 387SÓ81 G E S O L I D S T A T e 'd Ï » F | 3 ö 7 S D f l l DDlfl4Sfl 3 l ~ D Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number 1513 N-Channe Logic Level Power Field-Effect Transistors L2 FET)
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0dlfl42flrfl1n12lrfl1n15lrfp2n12l+3rfp2n15lcs-53741rfp1n12
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TA9401
Abstract: TA940 RFL1P08 RFL1P10 RFP2P08 RFP2P10
Contextual Info: SOLI» STATE 3875Ö81 DE§3Ö7S0Ö1 01 G E SÒL I D STATE Standard Power MOSFETs Q01ÛE17 1 | 0 1E 1 8 2 1 7 _ RFL1P08, RFL1P10, RFP2P08, RFP2P10 File N um ber 1535 Power MOS Field-Effect Transistors TERM INAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors
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RFP2N15L
Abstract: RFL1N12L RFL1N15L RFP2N12L TA9529 TA9528 rfp1n12
Contextual Info: Logic-Level Power MOSFETs RFL1N12L, RFL1N15L, RFP2N12L, RFP2N15L File Number N-Channel Logic Level Power Field-Effect Transistors L2 FET o 1 and 2 A, 120 V and 150 V rDs(on): 1.750 and 1.90 Feature*: • Design optimized for 5 volt gate drive ■ Can be driven directly from Q-MOS, N-MOS, TTL Circuits
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RFP2N06
Abstract: 1N10 RFL1N10 RFL1N08 RFP2N08 RFP2N10
Contextual Info: G E SOLID STATE Ôï i>i”|3fl7SDfll OOlflO'ï? b 3875081 G E S O L I D S T A T E Standard Power MOSFETs 01E 18097 D T -3 ? ~ RFL1N08, RFL1N10, RFP2N08, RFP2N10 * File Num ber N-Charinel Enhancement-Mode
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5Q07
Abstract: RFP mosfets RFL1N12 RFL1N15 RFP2N12 RFP2N15 rfp1n12 ta9196 TA921
Contextual Info: Standard Power MOSFETs RFL1N12, RFL1N15, RFP2N12, RFP2N15 File N um ber 1444 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 Amperes 120 V — 150 V ro s o n : 1.75fi and 1.90 Features: • SOA is power-dissipation lim ited m Nanosecond sw itching speeds
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RFL1N20L
Abstract: RFP2N20L RFL1N18L RFP2N18L
Contextual Info: ]>ËÏ 3Ô7SDS1 DD1Ö435 5 T ~ D T “3 ? ' 0 9 '3875081 G E SOLID STATELO! Logic-Level Power MOSFETs _ 5 !_ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File Number 1511 N-Channel Logic Level Power Field-Effect Transistors L2 FET
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RFL1N08L
Abstract: RFL1N10L RFP2N08L RFP2N10L
Contextual Info: Logic-Level Power MOSFETs_ RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level Power Fielcf-Effect Transistors L2 FET 1 and 2 A, 80 V and 100 V ros(on): 1.05fi and 1 .2 0 Features: • Design optim ized fo r 5 volt gate drive
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RFL1N20L
Abstract: RFP2N18L RFP2N20L AT 7312 RFL1N18L 92CS-J7307
Contextual Info: Logic-Level Power MOSFETs _ _ RFL1N18L, RFL1N20L, RFP2N18L, RFP2N20L File N um ber 15111 N-Channel Logic Level Power Field-Effect Transistors L2 FET 1 and 2 A, 180 V and 200 V rDs<on>: 3.5 O and 3.65 fi Features: • Design optimized for 5 volt gate drive
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2C337
Abstract: 92C5-37555 RFL2N05 RFL2N06 RFP4N05 RFP4N06
Contextual Info: 01 3fl750fll 0010113 □ 3 8 7 5 0 8 1 G E S O L ID STATE Standard Power MOSFETs - 01E 18113 RFL2N05, RFL2N06, RFP4N05, RFP4N06 File Number 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V rDs on = 0.60 and 0.750
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1n20
Abstract: RFP2N18 rfl1n18 RFL1N20 RFP2N20 TA9290 TA9289
Contextual Info: Standard Power MOSFETs RFL1N18, RFL1N20, RFP2N18, RFP2N20 F ile N u m b e r 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, 180 and 200 V rD s on : 3.50 and 3.650 Features: • a ■ ■ ■ SO A is p o w e r-d is s ip a tio n lim ite d
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2N15
Abstract: RFL1N12 RFL1N15 RFP2N12 RFP2N15 RFP-zn rfp1n12
Contextual Info: G E SOLID STATE ' DE I3Û7SGA1 GDlfllOl M T □! 0! § SOLID STATE Standard Power MOSFETs " 01E .18101 d T ' 3 ? “0 9 RFL1N12, RFL1N15, RFP2N12, RFP2N15 File Number 1444 N-Channel Enhancement-Mode
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1S11
Abstract: RFL1N18 RFL1N20 RFP2N18 RFP2N20
Contextual Info: 3875081 G E SOLID STATE Qi DETl3ö75Dfll ODlfllDS 1 Standard Pow er M O S F E T s _ • _ ■ RFL1N18, RFL1N20, RFP2N18, RFP2N20 File N u m b e r ' 1442 N-Channel Enhancement-Mode Power Field-Effect Transistors
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transistor N342
Abstract: TC1-C RFL1N08L RFL1N10L TA9525 RFP2N08L RFP2N10L RFP mosfets
Contextual Info: 38 75081 =01 G E SOL ID S T A TE Logic-Level Power MOSFÉTs T e 1 3 ö 7 5 0 ö 1 0 0 1 0 4 2 4 t, 01E18424 D 'T ~ '~ ^ 7~ ' RFL1N08L, RFL1N10L, RFP2N08L, RFP2N10L File Number 1510 N-Channel Logic Level
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TA9401
Abstract: 92CS-37586 RFL1P08 36485 3771 RFL1P10 RFP2P08 RFP2P10
Contextual Info: Standard Power M O S F E T s - RFL1P08, RFL1P10, RFP2P08, RFP2P10 F ile N u m b e r 1535 Power MOS Field-Eifect Transistors TERMINAL DIAGRAM P-Channel Enhancement-Mode Power Field-Effect Transistors 1 and 2 A, -80 V and -100 V
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UM1017
Abstract: PMV45EN LTST-C190UBKT TPS40071 TPS40071PWP CHOKE COMMON NXP MOSFETs SOT23-MOSFET UM10177 LEDR10
Contextual Info: UM10177 8 A PoL converter using SOT23 MOSFETs Rev. 02 — 21 December 2007 User manual Document information Info Content Keywords SOT23 MOSFET PoL PMV45EN demo board Abstract Point of Load PoL converters are at the leading edge of power supply performance in terms of power density and efficiency, however,
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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2N06
Abstract: RFL2N05 RFL2N06 RFP4N05 RFP4N06
Contextual Info: Standard Power M O S F E T s - RFL2N05, RFL2N06, RFP4N05, RFP4N06 File N u m be r 1497 N-Channel Enhancement-Mode Power Field-Effect Transistors 2 and 4 Amperes, 50 V - 60 V ro s o n = 0.60 and 0.750 Features: • SOA is power-dissipation limited
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RFL2N05L
Abstract: TA9520 RFL2N06L RFP4N05L RFP4N06L rfl2n06 FM09 92CS-33T4
Contextual Info: 3875081 G E' S O L I D STATECI Logic-Level Power MOSFETs DE | 3 Û 7 5 D Û 1 E I di T -3 7 -0 ? _ RFL2N05L, RFL2N06L, RFP4N05L, RFP4N06L F ile N u m b e r 1560 Power Logic Level MOSFETs T E R M IN A L D IA G R A M
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Contextual Info: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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f25n06l
Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
Contextual Info: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,
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RFP6P10
Abstract: 37149 RFM6P08 RFM6P10 RFP6P08 MCI 1496 P 2C3370
Contextual Info: E SOLID STATE D T | 3a7SDfll 0Dlfl2aS 0 H Ì ¿töS5081 G E S O L I D S T A T E 0 1E 18225 Standard Power MOSFETs _ RFM6P08, RFM6P10, RFP6P08, RFP6P10 D T -39-^i File Number 1490 P-Channel Enhancement-Mode Power Field-Effect Transistors 6 A, 80 V — 100 V
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