RF TRANSISTOR REFERENCE Search Results

Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF MOSFET Line RF Power Field Effect Transistor MRF9045MR1 N–Channel Enhancement–Mode Lateral MOSFET

TVU012

Abstract: 420 NPN Silicon RF Transistor ASI10646
Contextual Info: TVU012 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU012 is a common emitter RF bipolar transistor capable of providing 12 W, peak, Class-A, RF power output over 470-860 MHz. It utilizes input impedance matching to provide broadband performance.

TVU020

Abstract: RF Bipolar Transistor 2108-G ASI10648
Contextual Info: TVU020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TVU020 is a common emitter RF bipolar transistor capable of providing 20 W peak, Class-A, RF power output over 470-860 MHz. It utilizes emitter ballasting & input impedance matching to provide broadband

motorola sps transistor

Abstract: MRF21010
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet

Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

GRM39

Abstract: GRM708 RD05MMP1 diode GP 829 6030D
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.

transistor t06

Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
Contextual Info: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

D55342M07B

Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet

LAL04NA

Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.

RD02MUS1

Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD30HVF1

Abstract: RD30HVF1-101 rf power transistor rd30hvf1 100OHM
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD01MUS1-101

Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD07MUS2B

Abstract: transistor jc 817 gp 520 diode gp 817 RF POWER TRANSISTOR f763 transistor I 17-13 0773
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

grm708

Abstract: transistor 5024 GRM39 RD05MMP1 Diode GP 622 diode GP 829 Diode GP 641 diode gp 537
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD05MMP1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 941MHz, 5.5W a OUTLINE DRAWING RD05MMP1 is a MOS FET type transistor specifically designed for UHF RF power

RD09MUP2

Abstract: TRANSISTOR D 1765 720 L 0619 1788
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

RD20HMF1

Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD20HMF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,900MHz,20W DESCRIPTION OUTLINE RD20HMF1 is a MOS FET type transistor specifically designed for 900MHz-band RF power amplifiers

RD30HVF1

Abstract: 100OHM RD30HVF1-101 rd30hvf A 1469 mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD30HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,30W DESCRIPTION OUTLINE RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications.

RD16HHF1 application notes

Abstract: RD16HHF RD16HHF1-101 RD16HHF1 RD 15 hf mitsubishi 10Turns RD16hh Rf power transistor mosfet POWER MOSFET APPLICATION NOTE
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.

RD00HVS1

Abstract: transistor 5024 transistor D 5024 TRANSISTOR 7916
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

TRANSISTOR D 1765 320

Abstract: RF high POWER TRANSISTOR TRANSISTOR D 1765 marking 929 922 RD09MUP2 mitsubishi top side marking 1776 ER48 transistor mosfet 4425
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD09MUP2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 520MHz, 8W a DESCRIPTION (b) (b) RD09MUP2 is a MOS FET type transistor specifically designed for UHF RF power

RD01MUS1-101

Abstract: RD01MUS1 fet 547 2779, transistor RD01MSU1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.

RD02MUS1

Abstract: RD02MUS1-101 T112 3M Touch Systems
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.

RD00HVS1

Abstract: RF Transistor s-parameter vhf T113 RD00HVS1-101
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HVS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,0.5W OUTLINE DRAWING DESCRIPTION RD00HVS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.