MRF21010 Search Results

MRF21010 Datasheets (16)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
MRF21010	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF	384.43KB	8
MRF21010	Motorola	2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET	Original	PDF	400.65KB	8
MRF21010	Motorola	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	550.91KB	8
MRF21010	Motorola	MRF21010 RF Power Transistor	Original	PDF	148.84KB	8
MRF21010LR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF	384.44KB	8
MRF21010LR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF	384.43KB	8
MRF21010LR1	Motorola	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	550.91KB	8
MRF21010LR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360	Original	PDF		8
MRF21010LSR1	Freescale Semiconductor	RF Power Field Effect Transistors	Original	PDF	384.43KB	8
MRF21010LSR1	Motorola	RF Power Field Effect Transistor	Original	PDF	400.28KB	8
MRF21010LSR1	Motorola	RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs	Original	PDF	550.91KB	8
MRF21010LSR5	Freescale Semiconductor	RF FETs, Discrete Semiconductor Products, IC MOSFET RF N-CHAN NI-360S	Original	PDF		8
MRF21010R1	Motorola	2170 MHz, 10 W, 28 V Lateral N-Channel Broadband RF Power MOSFETs	Original	PDF	400.28KB	8
MRF21010S	Freescale Semiconductor	FET, Enhancement, N Channel, 2.5 VThreshold	Original	PDF	550.9KB	8

MRF21010S	Motorola	2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET	Original	PDF	400.65KB	8
MRF21010SR1	Motorola	2170 MHz,10 W,28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET	Original	PDF	402.54KB	8

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NXP Semiconductors MRF21010LR1 Trans RF MOSFET N-CH 65V 3-Pin NI-360 T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	MRF21010LR1		2,472		25	1 - 10 - 100 $46.08 1000 $41.23 10000 $38.80	Buy Now
Freescale Semiconductor MRF21010LR1 RF MOSFET LDMOS 65V 2.17GHz 100mA 2L-FLG T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	MRF21010LR1		2,488		1	1 - 10 - 100 $36.86 1000 $32.98 10000 $31.04	Buy Now

MRF21010 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
C-XM-99-001-01 Abstract: pep cxm MRF21010 Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010 mrf21010lr1 mrf21010lsr1 c-xm-99-001-01 +1pep cxm	PDF
capacitor 0805 avx Abstract: MRF21010 08055C103KATDA 3224W C-XM-99-001-01 08051J2R2BBT 293D106X9035D Bipolar NPN Transistor sot23 Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to	Original	mrf21010/d mrf21010 capacitor 0805 avx 08055c103katda +53224w c-xm-99-001-01 08051j2r2bbt 293d106x9035d bipolar npn transistor sot23	PDF
Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com. Go to Support/ Reference Designs/Networking and Communications Rev. 2, 12/2005 RF Reference Design Library MRF21010LR1 MRF21010LSR1 Narrowband CDMA RF Power Field Effect Transistors	Original	mrf21010lr1 mrf21010lsr1	PDF
NIPPON CAPACITORS Abstract: Transistor J438 CRCW08051001FKEA MRF21010 Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010--2 mrf21010lsr1 nippon capacitors transistor j438 +2crcw08051001fkea mrf21010	PDF
MRF21010 Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010 mrf21010lr1 mrf21010lsr1	PDF
MRF21010R1 Abstract: 567 tone MRF21010 MRF21010LSR1 100B102JW Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	mrf21010/d mrf21010r1 mrf21010lsr1 567 tone +2mrf21010 100b102jw	PDF
MRF21010 Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010/d mrf21010r1 mrf21010sr1 mrf21010 +2sot-23 macom 100b5r6b	PDF
10ACPR Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010lr1 mrf21010lsr1 10acpr	PDF
capacitor 2200 micro M Abstract: chip resistors bourns MACOM SOT23 MARKING marking us capacitor pf l1 sot-23/BC847 MRF21010 MRF21010LR1 MRF21010LSR1 macom marking Contextual Info: Document Number: MRF21010 Rev. 9, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFETs 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs	Original	mrf21010 mrf21010lr1 mrf21010lsr1 capacitor 2200 micro m +5chip resistors bourns macom sot23 marking marking us capacitor pf l1 sot-23/bc847 macom marking	PDF
CRCW08051001FKEA Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010 Contextual Info: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010--1 mrf21010lr1 crcw08051001fkea mrf21010 r1 +6marking us capacitor pf l1 atc100b0r5bt500xt atc100b102jt50xt t491d106k035at onsemi marking c10 mrf21010	PDF
CRCW08051001FKEA Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010 Contextual Info: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010--2 mrf21010lsr1 crcw08051001fkea tlx8-0300 +8c-xm-99-001-01 pd cms nippon capacitors bourns 3224w fm ldmos freescale transistor atc100b100gt500xt marking us capacitor pf l1 mrf21010	PDF
MRF21010 Abstract: MRF21010LR1 MRF21010LSR1 Vishay Capacitor marking Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010 Rev. 9, 5/2006 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf21010 mrf21010lr1 mrf21010lsr1 vishay capacitor marking	PDF
capacitor 2200 micro M Abstract: MRF21010LR1 MRF21010LSR1 08053G105ZATEA MRF21010 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	mrf21010/d mrf21010lr1 mrf21010lsr1 capacitor 2200 micro m +208053g105zatea mrf21010	PDF
j438 Abstract: MRF21010 Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	mrf21010/d mrf21010 mrf21010s j438	PDF

CRCW08052201FKEA Abstract: CRCW080510R0FKE MRF21010-1 MRF21010 Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,	Original	mrf21010--1 mrf21010lr1 crcw08052201fkea crcw080510r0fke +2mrf21010-1 mrf21010	PDF
Contextual Info: <£e.mi-Conclu<2koi ^Product*, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 378-8960 The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N- Channel Enhancement-Mode Lateral MOSFETs	Original	mrf21010lr1 mrf21010lsr1 360c-05 ni-360s	PDF
MRF21010 Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.	Original	mrf21010/d mrf21010 mrf21010s	PDF
MRF21010 Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110	Original	mrf21010/d mrf21010lr1 mrf21010lsr1 mrf21010	PDF
motorola sps transistor Abstract: MRF21010 Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Available at: http://www.motorola.com/rf/ Tools RF Reference Design Library The RF MOSFET Line MRF21010 RF Power Field Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET DEVICE CHARACTERISTICS From Device Data Sheet	Original	mrf21010 rdmrf21010ncdma motorola sps transistor	PDF
MRF21010 Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110	Original	mrf21010/d mrf21010r1 mrf21010lsr1 mrf21010	PDF
MRF21010 Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360 Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010/d mrf21010 mrf21010s 100b102jw +2293d106x9035d2t ni-360	PDF
capacitor 0805 avx Abstract: 08055C103KATDA J940 08053G105ZATEA Bipolar NPN Transistor sot23 MRF21010 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF21010 N–Channel Enhancement–Mode Lateral MOSFET 2170 MHz, 10 W, 28 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFET Designed for W–CDMA base station applications at frequencies from 2110 to	Original	mrf21010 capacitor 0805 avx 08055c103katda j940 +208053g105zatea bipolar npn transistor sot23	PDF
100B0R5BW Abstract: 100B102JW Transistor J438 100B5R6BW MRF21010 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF21010R1 RF Power Field Effect Transistors MRF21010LSR1 The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier	Original	mrf21010r1 mrf21010lsr1 100b0r5bw 100b102jw +3transistor j438 100b5r6bw mrf21010	PDF
BFG591 amplifier Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23 Contextual Info: RF手册第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品恩智浦RF手册令设计更简易恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP	Original	tff1007hn tff11070hn tff11073hn tff11077hn +16tff11080hn tff11084hn tff11088hn tff11092hn tff11096hn tff11101hn bfg591 amplifier 5.8ghz analog rf mmic mrf6vp3450 nxp standard marking blf6g21-10g fet 2n5459 rf lnb c band chipset radar 77 ghz sige 82 sot363-6 dect antenna smd code marking ft sot23	PDF

MRF21010 Search Results

MRF21010 Datasheets (16)

MRF21010 Price and Stock

NXP Semiconductors MRF21010LR1

Freescale Semiconductor MRF21010LR1

MRF21010 Datasheets Context Search

C-XM-99-001-01

capacitor 0805 avx

NIPPON CAPACITORS

MRF21010

MRF21010R1

MRF21010

10ACPR

capacitor 2200 micro M

CRCW08051001FKEA

CRCW08051001FKEA

MRF21010

capacitor 2200 micro M

j438

CRCW08052201FKEA

MRF21010

MRF21010

motorola sps transistor

MRF21010

MRF21010

capacitor 0805 avx

100B0R5BW

BFG591 amplifier