3224W Search Results

bourns trimpot 3006P

Abstract: trimpot 3006P bourns trimpot 3009P 3355x specification of bourns trimpot 3006P potentiometer 3355X 3304W 3326P T9013 bourns 3389W
Contextual Info: Trimpot Potentiometer SUBSTITUTION GUIDE A summary of Bourns Trimpot alternatives for models not available or out of stock. SQUARE MULTITURNS Customer Requesting 1st Alternative Model/Pin Style 2nd Alternative Model/Pin Style 3224G 3224J 3224W 3250L 3250P

Bourns Trimpot

Abstract: trimpot mexico 3224w Bourns 3224 3214 trimpot T0765
Contextual Info: TRIMMERS December 2007 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Trimpot® Product Line Announces Manufacturing Location Change for Models 3214 / 3224 Bourns® Trimpot® Product Line will be moving production of Models 3214 and 3224 from Mexico to

Contextual Info: Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large−signal, common−

Trimpot 3006P

Abstract: trimmer 3386 trimpot 3006p 104 trimmer 3296 trimpot 203 3224W-1-103E trimpot 3386 bourns trimpot 3006P trimmer 3386 503 3224W-1-102E
Contextual Info: TRIMPOT PRODUCTS Bourns® Trimmer Design Kits Riverside, California - September 25, 2007 - Bourns® Trimpot® Product Line is proud to announce the release of newly assembled trimmer design kits. The kits offer a general selection of popular trimmer parts for individual

bourns trimpot 3006P

Abstract: trimpot 3006P 3386F trimmer 3386 3299 trimpot 3269 3296W 3386 TRIMPOT trimmer 3296 trimpot 3296 datasheet
Contextual Info: TRIMMING POTENTIOMETERS July, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Bourns Internal Bourns Plant Managers Trimmer Distributor Product Definition Change Bourns Trimpot® Division is pleased to announce a distributor product definition change on select

Contextual Info: Freescale Semiconductor Technical Data MRF9100 Rev. 3, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9100R3 MRF9100SR3 Designed for GSM and EDGE base station applications with frequencies from 921 to 960 MHz, the high gain and broadband performance of these

trimpot

Abstract: trimpot datasheet 550C
Contextual Info: December 2005 Reliable Electronic Solutions Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team TS OT MP ODUC I R T PR Bourns® Trimpot® Division Announces 3214/3224 Product Update

Contextual Info: DS90UR905 Serializer and DS90UR906 Deserializer Evaluation Kit User’s Manual NSID: SERDESUR-65USB Rev 0.4 National Semiconductor Corporation Date: 3/26/2010 Page 1 of 44 Table of Contents TABLE OF CONTENTS . 2

smd e2b

Abstract: 101SX 8026EKW t20yp TYA sfernice 2103P 8038EKP pot0102 3102P Vishay Copal
Contextual Info: CROSS REFERENCE Trimmers VISHAY T TRIMMER CROSS REFERENCE PART NUMBER SUPPLIER VISHAY CROSS PACKAGE TYPE ORDER CODE PACKAGE QUANTITY MOQ COMMENTS 170 VRN T7RYB, T7YB TUBES D 06 50 200 T7R WATER SEALED, T7 DUST SEALED 171 VRN T7RYA, T7YA TUBES D 06 50 200 T7R WATER SEALED, T7 DUST SEALED

transistor TL131

Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
Contextual Info: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR

Automotive HSD Connector

Abstract: H2959CT-ND SMD resistors 10k ohm 0402 JP24 C1005X5R1E104K N2520-6002RB N2520-6002-RB J658-ND LTST-C191KGKT interface HSD Rosenberger
Contextual Info: DS99R124Q-EVK FPD-Link II to FPD-Link Converter Evaluation Kit Rev 0.0 April, 2010 General Description The DS99R124Q-EVK converts FPD-link II to FPD-Link. It translates a high-speed serialized interface with an embedded clock over a single pair to three LVDS data/control streams and one LVDS clock pair. It is backward compatible for operation with

D4S20B-40ML5-Y

Abstract: trimpot 100 ohm smd p1 hsd_2x2_open A31726-ND ROSENBERGER hsd ROSENBERGER* HSD SVR20K N2520-6002-RB SMD capacitor mil
Contextual Info: DS90UR907Q-EVK FPD-Link to FPD-Link II Converter Evaluation Kit Rev 0.1 April, 2010 General Description The DS90UR907Q-EVK converts FPD-link to FPD-Link II. It translates four LVDS data/control streams and one LVDS clock pair into a high-speed serialized interface over a single pair. It is backward compatible for operation with older generation

Contextual Info: *R oH S CO M PL IA NT Features • Surface Mount 4 mm Square / Multiturn ■ Low CRV - 1 % Cermet / Industrial / Sealed ■ Sealed to withstand board wash processing ■ Pick and place centering design, with flush adjustment ■ 4mm design meets EIA/EIAJ/IPC/VECI SMD

AT27273

Abstract: DSA00344764 k3224 1206 cms diode cms capacitor gsm Booster 22 pf TEKELEC TEKELEC tekelec 630 VJ1206Y104KXAT
Contextual Info: DB-915-12W 12W / 12V / 875-915 MHz PA using 1x PD55015S The LdmosST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 12 W min. with 12 dB gain over 875 - 915 MHz • 10:1 LOAD VSWR CAPABILITY

Contextual Info: MW4IC915 Freescale Semiconductor Rev. 6, 5/2006 Replaced by MW4IC915NBR1 GNBR1 . There are no form, fit or function changes with this part Technical Data replacement. N suffix added to part number to indicate transition to lead - free terminations. ARCHIVE INFORMATION

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

LM7805 smd

Abstract: BCP56 LM7805 PTF081301E PTF081301F transistor SMD LOA DD 127 D TRANSISTOR
Contextual Info: PTF081301E PTF081301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 – 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest

C-XM-99-001-01

Abstract: pep cxm MRF21010
Contextual Info: Freescale Semiconductor Technical Data MRF21010 Rev. 8, 12/2004 RF Power Field Effect Transistors MRF21010LR1 MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier

transistor di 960

Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

3224w-fw5-203

Abstract: 3224W-1-501E 2501E H-814-2 3313J-1-501E
Contextual Info: Design Kits: Trimming Potentiometers Trimming potentiometers perform a variety of circuit adjustments in all types of electronic equipment. The variety of physical configurations available and the ability to withstand today's manufacturing environment offers the designer flexibility in selecting

100B201JT500XT

Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

42756 regulator

Abstract: 42756 C207 capacitor j146 1300 transistor
Contextual Info: PTVA123501EC Thermally-Enhanced High Power RF LDMOS FET 350 W, 50 V, 1200 – 1400 MHz Description The PTVA123501EC LDMOS FET is designed for use in power amplifier applications in the 1200 MHz to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with

H-814-2

Abstract: 3224W-1-501E 3224w-fw5-203 3223W-1-103E 3223W-1-104E 3223W-1-105E 3223W-1-501E 3223W-1-502E 3224G-1-502E H-851
Contextual Info: Design Kit: Trimming Potentiometers Trimming potentiometers perform a variety of circuit adjustments in all types of electronic equipment. The variety of physical configurations available and the ability to withstand today's manufacturing environment offers the designer flexibility in selecting the best trimmer for the