Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    MRF21010S Search Results

    MRF21010S Datasheets (3)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    MRF21010S
    Freescale Semiconductor FET, Enhancement, N Channel, 2.5 VThreshold Original PDF 550.9KB 8
    MRF21010S
    Motorola 2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Original PDF 400.65KB 8
    MRF21010SR1
    Motorola 2170 MHz,10 W,28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET Original PDF 402.54KB 8

    MRF21010S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor J438

    Abstract: MRF21010 100B102JW
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21010mrf21010stransistor j438100b102jw PDF

    2a258 transistor

    Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
    Contextual Info: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii


    Original
    dl110/d2a258 transistorfuji electric tv schematic diagramsmd transistor wb3+7vhf fm pll schematic mc145152motorola transistor smd marking codesmark 176 sot363 rfnote ar164, motorola rf device data, volume ii, dtip off 0401 mosfet transistorcordless phone transceiver icsemiconductors cross index PDF

    MRF21010

    Abstract: MRF21010SR1 sot-23 macom MRF21010R1 100B5R6B
    Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21010/dmrf21010r1mrf21010sr1mrf21010+2sot-23 macom100b5r6b PDF

    Contextual Info: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181


    Original
    mbc13900mrf281sr1mrf281zr1mrf282sr1+6mrf282zr1mrf284mrf284sr1mrf21090smrf21120mrf21120s PDF

    MOTOROLA SCR 1725

    Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
    Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1


    Original
    dl110/dmotorola scr 1725732 160 16 capactor for video cardmatsushita compressor capacitor+7matsushita compressor codessansui tv diagrammanhattan catvarm cc 1800 39pmrf373 push pullic 741 opamp datasheetmps901 PDF

    j438

    Abstract: MRF21010
    Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original
    mrf21010/dmrf21010mrf21010sj438 PDF

    HP RF TRANSISTOR GUIDE

    Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
    Contextual Info: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS


    Original
    sg384/dhp rf transistor guidemrf286mrf210305+7mhl9838mrf284curticelinear amplifier 470-860base station driversmotorola mrfhigh frequency mrf transistor PDF

    EB202

    Abstract: AR305 "Good RF Construction Practices and Techniques" transistors EB202 MOTOROLA circuit for mrf150 AN749 ford eec V ar164 TRANSISTOR C 6090 lg AN762 RF AMPLIFIER
    Contextual Info: SG46/D REV 21 Wireless RF, IF and Transmitter Selector Guide Wireless RF, IF and Transmitter Selector Guide While Motorola is a worldwide leader in semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF


    Original
    sg46/deb202ar305good rf construction practices and techniques+7transistors eb202motorola circuit for mrf150an749ford eec var164transistor c 6090 lgan762 rf amplifier PDF

    MRF21010

    Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in class AB for PCN–PCS/cellular radio and WLL applications.


    Original
    mrf21010/dmrf21010mrf21010s PDF

    MHW6181

    Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
    Contextual Info: 7 2 , R O T C U D N RF AND IF O C S E H C AR D E IV BY E L A C MI SE E R F WWW.MOTOROLA.COM/SEMICONDUCTORS QUARTER 4, 2001 SPSSG1009/D REV 0 :KDW•V 1HZ Market Part General Purpose RF SiGe:C LNA and Cascode Amplifier MBC13720, MBC13916 Land Mobile Radio MRF1535T1, MRF1550T1


    Original
    spssg1009/dmbc13720mbc13916mrf1535t1+15mrf1550t1mrf373amrf373asmrf374amrf372mrf9002r1mhw6181mrf151gmrf9135lsmrf455 application notesamplifier mrf247mrf247mrf171amrf21180mrf428 PDF

    MRF21010

    Abstract: 100B102JW 293D106X9035D2T MRF21010S NI-360
    Contextual Info: MOTOROLA Order this document by MRF21010/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original
    mrf21010/dmrf21010mrf21010s100b102jw+2293d106x9035d2tni-360 PDF