301AP Search Results

25C2625

Abstract: MHPA19010N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA19010N Rev. 6, 5/2006 PCS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET design provides outstanding linearity

Contextual Info: MHL9838 Rev. 4, 1/2005 Freescale Semiconductor Technical Data Replaced by MHL9838N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHL9838 Designed for ultra- linear amplifier applications in 50 ohm systems operating in

Contextual Info: Document Number: MHL21336N Rev. 8, 12/2006 Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating

Contextual Info: MHPA19010 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Replaced by MHPA19010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA19010 Designed for Class AB amplifier applications in 50 ohm systems operating in

Contextual Info: Freescale Semiconductor Technical Data Cellular Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

Contextual Info: MHPA21010N Rev. 4, 1/2005 Freescale Semiconductor Technical Data UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.

MHL21336

Contextual Info: MOTOROLA Order this document by MHL21336/D SEMICONDUCTOR TECHNICAL DATA The RF Line 3G Band RF Linear LDMOS Amplifier MHL21336 Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

MHL9236

Contextual Info: MHL9236 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MHL9236N and MHL9236MN in March 2005. There are no form, fit or function changes with these part replacements. N suffix added to part number to indicate transition to lead - free terminations.

IRL40

Abstract: 3332-G
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL9236N Rev. 7, 2/2006 Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL18336N Rev. 4, 7/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding

Contextual Info: Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 5, 7/2005 PCS Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding

Contextual Info: Freescale Semiconductor Technical Data Replaced by MHL9236NN. There are no form, fit or function changes with this part replacement. MHL9236N Cellular Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating

MHL9838N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL9838N Rev. 6, 7/2005 Cellular Band RF Linear LDMOS Amplifier MHL9838N Designed for ultra- linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

Contextual Info: MHL21336N Rev. 5, 1/2005 Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

3332-G

Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 1/2005 Cellular Band RF Linear LDMOS Amplifiers Designed for ultra - linear amplifier applications in 50 ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

king 525

Abstract: power linear amplifier freescale power linear LDMOS freescale MHL19338NN
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL19338NN Rev. 0, 12/2006 Designed for ultra - linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

king 525

Abstract: MHL18336 MHL18336N
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL18336N Rev. 5, 8/2006 Designed for ultra- linear amplifier applications in 50 ohm systems operating in the PCS frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity

MHPA18010N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase

MHL19338N

Abstract: MHL19338NN
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL19338N Rev. 7, 12/2006 Replaced by MHL19338NN. There are no form, fit or function changes with this part replacement. MHL19338N Designed for ultra - linear amplifier applications in 50 ohm systems operating

MHPA21010

Abstract: MHPA21010N
Contextual Info: Freescale Semiconductor Technical Data MHPA21010 Rev. 3, 1/2005 Replaced by MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in

MHPA21010N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.

MHL21336N

Abstract: MHL21336NN
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336N Rev. 8, 12/2006 Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating