MHPA18010N Search Results
MHPA18010N Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MHPA18010N |
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CDMA Band RF Linear LDMOS Amplifier | Original | 63.92KB | 4 |
MHPA18010N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MHPA18010NContextual Info: Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase |
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MHPA18010N MHPA18010N | |
Contextual Info: MHPA18010N Rev. 2, 1/2005 Freescale Semiconductor Technical Data CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase |
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MHPA18010N | |
Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 3, 7/2005 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides |
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MHPA18010N MHPA18010N | |
MHPA18010NContextual Info: Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 3, 7/2005 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides |
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MHPA18010N MHPA18010N | |
Contextual Info: MHPA18010 Rev. 1, 1/2005 Freescale Semiconductor Technical Data Replaced by MHPA18010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA18010 Designed for Class AB amplifier applications in 50 ohm systems operating in |
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MHPA18010 MHPA18010N. | |
Contextual Info: MHPA18010 Rev. 1, 1/2005 Freescale Semiconductor Technical Data Will be replaced by MHPA18010N in March 2005. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. |
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MHPA18010N MHPA18010 51ficers, MHPA18010 | |
MHPA18010NContextual Info: Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides |
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MHPA18010N MHPA18010N | |
Contextual Info: Document Number: MHPA18010N Rev. 4, 5/2006 ARCHIVE INFORMATION CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase |
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MHPA18010N | |
mhpa18010Contextual Info: MHPA18010N Rev. 2, 1/2005 Freescale Semiconductor Technical Data CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase |
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MHPA18010N MHPA18010N mhpa18010 | |
MHPA18010
Abstract: MHPA18010N
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MHPA18010 MHPA18010N. 885eescale MHPA18010 MHPA18010N | |
stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
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SG1009Q32005 MMM6025 MC13820 MRF377HR3, MRF377HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, stripline directional couplers MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1 | |
301apContextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase |
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MHPA18010N 301ap | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
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MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
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SG1000CRQ32005 SG1000CRQ32005 MC9S12XDP384 MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb | |
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MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
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SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications |