MHPA21010 Search Results
MHPA21010 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MHPA21010 | Freescale Semiconductor | 2110-2170 MHz, 10 W, 24 dB, RF HIGH POWER LDMOS AMPLIFIER | Original | 95.34KB | 2 | ||
| MHPA21010 | Motorola | UMTS Band RF Linear LDMOS Amplifier | Original | 159.98KB | 4 | ||
| MHPA21010 | Motorola | The RF Line UMTS BAND RF LINEAR LDMOS AMPLIFIER | Original | 330.39KB | 4 | ||
| MHPA21010 | Motorola | UMTS Band RF Linear LDMOS Amplifier | Original | 93.65KB | 2 | ||
| MHPA21010N | Freescale Semiconductor | UMTS Band RF Linear LDMOS Amplifier | Original | 135.89KB | 8 |
MHPA21010 Datasheets Context Search
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Contextual Info: MHPA21010N Rev. 4, 1/2005 Freescale Semiconductor Technical Data UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. |
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mhpa21010n | |
MHPA21010
Abstract: MHPA21010N
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mhpa21010mhpa21010n | |
MHPA21010NContextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. |
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mhpa21010n | |
MHPA21010Contextual Info: MHPA21010 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Replaced by MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in |
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mhpa21010mhpa21010n | |
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Contextual Info: Freescale Semiconductor Technical Data MHPA21010 Rev. 3, 1/2005 Will be replaced by MHPA21010N in March 2005. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. |
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mhpa21010nmhpa2101084fficers | |
MHPA21010NContextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity |
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mhpa21010n | |
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Contextual Info: Document Number: MHPA21010N Rev. 6, 5/2006 ARCHIVE INFORMATION UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. |
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mhpa21010n | |
mhpa21010Contextual Info: MOTOROLA Order this document by MHPA21010/D SEMICONDUCTOR TECHNICAL DATA The RF Line UMTS Band RF Linear LDMOS Amplifier MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity |
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mhpa21010/dmhpa21010 | |
gp 2120Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UMTS Band RF Linear LDMOS Amplifier MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems. |
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mhpa21010gp 2120 | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 5, 7/2005 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity |
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mhpa21010n | |
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Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 5, 7/2005 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity |
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mhpa21010n | |
mhpa21010Contextual Info: MOTOROLA Order this document by MHPA21010/D SEMICONDUCTOR TECHNICAL DATA The RF Line UMTS Band RF Linear LDMOS Amplifier MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity |
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mhpa21010/dmhpa21010 | |
mhpa21010Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MHPA21010/D SEMICONDUCTOR TECHNICAL DATA The RF Line Freescale Semiconductor, Inc. UMTS Band RF Linear LDMOS Amplifier MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in |
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mhpa21010/dmhpa21010 | |
motorola application note amplifier power
Abstract: mhpa21010
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mhpa21010/dmhpa21010motorola application note amplifier power | |
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stripline directional couplers
Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
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sg1009q32005mmm6025mc13820mrf377hr3+12 | |
TRANSISTOR REPLACEMENT GUIDE
Abstract: FS Oncore hf modem ofdm bts 2140 1b data sheet ISO 1302 uhf linear amplifier module linear amplifier 470-860 amplifier mrf247 class AB hf bipolar FM LDMOS freescale transistor
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sg1009q42004mrf5s9070nr1mrf5s9100mr1mrf5s9100mbr1+16 | |
2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
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dl110/d2a258 transistorfuji electric tv schematic diagramsmd transistor wb3+7 | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
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power transistors tablemw6s010nr1mrfe6s9060nmhw6342tn+6 | |
MC9S12XDP384
Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
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sg1000crq32005mc9s12xdp384mpx7007sg187+7 | |
MHL9838NContextual Info: Chapter Six RF Amplifier ICs and Modules Data Sheets Device Number Page Number Amplifier ICs and Modules MHL9236N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHL9236MN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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mhl9236nmhl9236mnmhl9318nmhl9838n+6 | |
Mrf648
Abstract: MRF185 MRF373 MRF650 MG4100 MC3PHAC MRF648 applications mpx6115 MPX53 TPV8100B
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sg1000crq42004mrf648mrf185mrf373+7 | |
M 9587
Abstract: FS Oncore MG4100 LDMOS PA Driver IC, Motorola FS Oncore GPS motorola GPS receiver module fs oncore Motorola transistors MRF646 semiconductors cross index transistor m 9587 MRF9210
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sg1009/dmrf377mw4ic001mr4mrf9210+15 | |
MMM6029
Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
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sg1009q42005mmm6025mmm6035mc13820+16 | |
MHW6181
Abstract: MRF151G MRF9135LS MRF455 APPLICATION NOTES amplifier mrf247 MRF247 MRF171A MRF21180 MRF374A MRF428
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spssg1009/dmbc13720mbc13916mrf1535t1+15 | |