MHPA21010N Search Results

Contextual Info: MHPA21010N Rev. 4, 1/2005 Freescale Semiconductor Technical Data UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.

MHPA21010

Abstract: MHPA21010N
Contextual Info: Freescale Semiconductor Technical Data MHPA21010 Rev. 3, 1/2005 Replaced by MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in

MHPA21010N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.

MHPA21010

Contextual Info: MHPA21010 Rev. 3, 1/2005 Freescale Semiconductor Technical Data Replaced by MHPA21010N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MHPA21010 Designed for Class AB amplifier applications in 50 ohm systems operating in

Contextual Info: Freescale Semiconductor Technical Data MHPA21010 Rev. 3, 1/2005 Will be replaced by MHPA21010N in March 2005. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

MHPA21010N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 6, 5/2006 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity

Contextual Info: Document Number: MHPA21010N Rev. 6, 5/2006 ARCHIVE INFORMATION UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital modulation systems.

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 5, 7/2005 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity

Contextual Info: Freescale Semiconductor Technical Data Document Number: MHPA21010N Rev. 5, 7/2005 UMTS Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the UMTS frequency band. A silicon FET design provides outstanding linearity

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

power transistors table

Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Contextual Info: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,

MC9S12XDP384

Abstract: MPX7007 SG187 DSPA56371AF150 DSP56F803BU80E MPC8548 DSP56303PV100 9s12dp256, 9s12dg256, 9s12dt256 MRF648 applications mrf6s19100nb
Contextual Info: Freescale Semiconductor Product Selector Guide Cross-Reference Quarter 3, 2005 SG1000CRQ32005 Rev 0 Introduction The Freescale Semiconductor Product Selector Guide Cross-Reference provides a listing of all products documented in the fifteen Freescale Semiconductor Product

MHL9838N

Contextual Info: Chapter Six RF Amplifier ICs and Modules Data Sheets Device Number Page Number Amplifier ICs and Modules MHL9236N . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-3 MHL9236MN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

MMM6029

Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications
Contextual Info: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular