MHL21336NN Search Results
MHL21336NN Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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MHL21336NN |
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3G Band RF Linear LDMOS Amplifier | Original | 122.75KB | 6 |
MHL21336NN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Document Number: MHL21336N Rev. 8, 12/2006 Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N Designed for ultra - linear amplifier applications in 50 ohm systems operating |
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MHL21336N MHL21336NN. | |
Contextual Info: Freescale Semiconductor Technical Data Replaced by MHL21336NN. There are no form, fit or function changes with this part replacement. MHL21336N 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating |
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MHL21336NN. MHL21336N MHL21336N | |
MHL21336N
Abstract: MHL21336NN
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MHL21336N MHL21336NN. MHL21336N MHL21336NN | |
Contextual Info: Document Number: MHL21336NN Rev. 0, 12/2006 Freescale Semiconductor Technical Data MHL21336NN Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL21336NN | |
MHL21336NNContextual Info: Freescale Semiconductor Technical Data Document Number: MHL21336NN Rev. 0, 12/2006 Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
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MHL21336NN 301AP MHL21336NN | |
MHL21336NNContextual Info: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN 3G Band RF Linear LDMOS Amplifier Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding |
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MHL21336NN 301AP MHL21336NN | |
power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
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MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
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TV booster diagram
Abstract: mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE
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DL210 TV booster diagram mhw* 820-1 DATASHEET pcb assembly 85501 application circuits of ic 74121 MHW6342TN motorola 18310 MHL9236MN DL210 010485 GP 809 DIODE | |
MHL21336NNContextual Info: Freescale Semiconductor Technical Data 3G Band RF Linear LDMOS Amplifier LIFETIME BUY Designed for ultra - linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity |
Original |
MHL21336NN 301AP MHL21336NN |