QED423 Search Results

light emitting diode

Abstract: QED422 QEC423 QEC422 QED423
Contextual Info: QED422, QED423 Plastic Infrared Light Emitting Diode Features Description • ■ ■ ■ ■ ■ ■ The QED422/423 is an 880 nm AlGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. λ= 880 nm Chip material = AlGaAs Package type: Plastic TO-46

schematic diagram of infrared

Abstract: QEC522 QEC523 QED422 QED423
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED422 QED423 PACKAGE DIMENSIONS REFERENCE SURFACE 0.190 4.83 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM 45° SCHEMATIC 0.020 (0.51) SQ. (2X)

Contextual Info: [ « n PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTBOBICS QSD722/723/724 DESCRIPTION The QSD72X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. II FEATURES Tight production distribution. Steel lead frames for improved reliability in solder

Contextual Info: [*T i PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD422/423/424 PACKAGE DIMENSIONS DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. R E FER E N C E SU RFACE FEATURES EMITTER .800 20.3 MIN

Contextual Info: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

Contextual Info: Plastic Light Emitting Diodes TO-46 Plastic Diode Package REFERENCE SURFACE 0.190 (4.83) 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF

Contextual Info: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)

QED234

Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Contextual Info: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9

MAN6760 function

Abstract: KAR00042 KAR00044 KOI00003 KAT00022A kva00272 KAT00049 Fairchild kar00042 KAR00044A KDT00026
Contextual Info: Date Created: 2/12/2004 Date Issued: 2/19/2004 PCN # 20040702 INFORMATION ONLY NOTIFICATION This is to inform you that a minor change is being made to the following product s . This notification is for your information only. Updated process quality documentation, such as FMEAs and Control Plans, are available

SEC TIP 127

Abstract: QEA123
Contextual Info: ÖUALITY TECHNOLOGIES CORP 3flE D Ei 74bfcjflSl 0003*^37 5 D ö T Y T - m - n INFRARED LIGHT EMITTING DIODES Characteristics at 25° C P ara­ m eter Emission A ngle a t Vi Power T est C ondi­ tions Peak W avelength A pertured R adiant Incidence If If = 20 m A

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Contextual Info: [SU PLASTIC SILICON PHOTOTRANSISTOR 0 P I O E L E C T I O H ICS QSD722/723/724 The QSD72X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES Tight production distribution. Steel lead frames for improved reliability in solder

QED423

Abstract: QSD722 QSD723
Contextual Info: L*0 PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD722/723/724 PACKAGE DIMENSIONS DESCRIPTION The QSD72X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES •Tight production distribution. ■Steel lead frames for improved reliability in solder

se113

Contextual Info: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135

irf 3502

Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
Contextual Info: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page

Contextual Info: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

H12E

Abstract: QRD1114-ND QRB1134 QEC113-ND RPM7238-H9R QRB1134-ND TO-46 RPM5338-H14 RPM7138-H4R-ND QRB1114-ND
Contextual Info: Infrared Photosensors and Emitters Fig. 1 Semiconductor Infrared Emitters IRED LEDs Fig. 2 2 Orange(A) Green(K) Blue(E) White(C) 3 1 Fig. 3 – TO-46 2 Lead Fig. 4 – TO-46 Flat Window 2 Lead 3 1 4 4 2 For- Max. Peak ward Forward Minimum Beam Wave- Volt. Current Power Angle Length

Contextual Info: EQ PLASTIC SILICON PHOTOTRANSISTOR 0 PTOELECTRDHICS QSD422/423/424 PACKAGE DIMENSION! DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. L, 190 4.83 j .178(4.52) REFERENCE SURFACE' II FEATURES

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA

ORB1134

Abstract: H11F1 300 CNY17GF-2 cnw85 CQX17 L14LOB 740L6000 OPB704 MAN4710 1LP6
Contextual Info: so OPTOELECTRONICS PART NUMBER INDEX P a rt Numbe* Part N u m b e r Part Num ber Part N um ber 1N6264 35 CNW138 17 CQX14 35 GMC2988C 145 H11C2.300 1N6265 35 CNW138.300 17 CQX15 35 GMC7175C 133 H11C3 22 1N6266 35 CNW139 17 CQX16 35 GMC7175CA 133 H11C3.300 22