QSD42X Search Results

Contextual Info: [*T i PLASTIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS QSD422/423/424 PACKAGE DIMENSIONS DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. R E FER E N C E SU RFACE FEATURES EMITTER .800 20.3 MIN

Contextual Info: EQ PLASTIC SILICON PHOTOTRANSISTOR 0 PTOELECTRDHICS QSD422/423/424 PACKAGE DIMENSION! DESCRIPTION The QSD42X is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. L, 190 4.83 j .178(4.52) REFERENCE SURFACE' II FEATURES

qed234

Abstract: QED422
Contextual Info: rsra AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS The QED42X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. i_.190 4.83 _j REFERENCE SURFACE FEATURES 0.030 (0.76) NOM CATHODE .800 (20.3)

Contextual Info: ¡£Xj AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED422/423 PACKAGE DIMENSIONS DESCRIPTION The QED42X is an 880nm AIGaAs LED encapsulated in a clear, purple tinted, plastic TO-46 package. i_ .1 9 0 4 .8 3 _ i REFERENCE^ SURFACE n FEATURES 0.030 (0.76)

SEC TIP 127

Abstract: QEA123
Contextual Info: ÖUALITY TECHNOLOGIES CORP 3flE D Ei 74bfcjflSl 0003*^37 5 D ö T Y T - m - n INFRARED LIGHT EMITTING DIODES Characteristics at 25° C P ara­ m eter Emission A ngle a t Vi Power T est C ondi­ tions Peak W avelength A pertured R adiant Incidence If If = 20 m A

Contextual Info: ÛUALITY TECHNOLO GIES CORP 3flE D B 74bbô51 G G G 3 ei3e] b E3ÖTY PHOTOSENSORS Characteristics at 25° C Part Number QSA122 QSA123 QSA124 QSA223 QSA224 QSB113 QSB114 QSB213 QSB214 QSC112 QSC113 QSC114 QSD122 QSD123 QSD124 QSD422 QSD423 QSD424 QSD613 QSD614