QED522 Search Results

Contextual Info: FQ AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED522/523 PACKAGE DIMENSIONS DESCRIPTION The QED52X is an 880 nm AIGaAs LED encapsulated in a clear, peach tinted, plastic TO-46 package. REFERENCE SURFACE .05 1.27 J NOM FEATURES I 0.100 (2.54) r— NOM

QED522

Abstract: QEC522 QEC523 QED523 light emitting diode fairchild "Infrared LED" 880 nm Pulsed Forward Current diode Sr 203 light emitting diode LED
Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED522 QED523 PACKAGE DIMENSIONS REFERENCE SURFACE 0.190 4.83 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM 45° SCHEMATIC 0.020 (0.51) SQ. (2X)

QED522

Contextual Info: PLASTIC INFRARED LIGHT EMITTING DIODE QED522 QED523 PACKAGE DIMENSIONS REFERENCE SURFACE 0.190 4.83 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM 45° SCHEMATIC 0.020 (0.51) SQ. (2X)

QED522

Abstract: QED523
Contextual Info: AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED522/523 PACKAGE DIMENSIONS 1 .190 4.83 .178(4.52) The QED52X is an 880 nm AIGaAs LED encapsulated in a clear, peach tinted, plastic TO-46 package. 1 ~1 REFERENCE SURFACE \ s .230 (5.84) .210(5.33) 1 FEATURES

Contextual Info: [s9 AIGaAs INFRARED EMITTING DIODE OPTOELECTRONICS QED522/523 PACKAGE DIMENSIONS DESCRIPTION Th e Q E D 52X is an 8 8 0 nm AIGaAs LED encapsulated in a clear, peach tinted, plastic T O -4 6 package. REFERENCE SURFACE .230 5.84 .210(5.33) FEATURES Tight production Ea distribution.

Fairchild 902

Abstract: QED522 fairchild leds QED523
Contextual Info: QED522, QED523 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED522 and QED523 are 880nm AlGaAs LEDs encapsulated in a clear peach tinted, plastic TO-46 package. ■ Chip material = AlGaAs ■ Package type: Plastic TO-46

Contextual Info: EO AIGaAs INFRARED EMITTING DIODE OPTOELECinOIIICS QED522/523 PACKAGE DIMENSIONS DESCRIPTION The Q E D 52X is an 8 8 0 nm AIGaAs LED encapsulated in a clear, peach tinted, plastic T O -4 6 package. REFERENCE SURFACE a FEATURES • Tight production E6 distribution.

Contextual Info: OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES T-1 3 mm Part Number 76 NOM jr~r le Angle @ 1/2 Power Radiant Intensity min max units V F/IF (V)l(mA) max I r/V r (ViA)/(V) max Notes 940 nm GaAs \ .052(1 32) .032 (.082) Emission JT | QEC112 ±8° 6

QRB1134

Abstract: H22A2 QRB1113 QRB1114 QRD1114 LED55C QSE113 QSC112 QSE157 QSE158
Contextual Info: Index Part Number 1N6264 1N6265 BPW36 BPW37 BPW38 CNY28 CNY29 CNY36 CQX14 CQX15 CQX16 CQX17 F5D1 F5D2 F5D3 F5E1 F5E2 F5E3 H21A1 H21A2 H21A3 H21A4 H21A5 H21A6 H21B1 H21B2 H21B3 H21B4 H21B5 H21B6 H21LOB H21LOI H21LTB H21LTI H22A1 H22A2 H22A3 H22A4 H22A5 H22A6

Contextual Info: Plastic Light Emitting Diodes TO-46 Plastic Diode Package REFERENCE SURFACE 0.190 (4.83) 0.178 (4.52) 0.220 (5.59) 0.030 (0.76) NOM 0.800 (20.3) MIN 0.050 (1.27) CATHODE 0.100 (2.54) NOM Ø 0.215 (5.46) NOM Part Number Ie @ 100 mA IF (mW/sr) min max VF @ 100 mA IF

Contextual Info: [ * o OPTOELECTRONICS PLASTIC INFRARED LIGHT EMITTING DIODES t E m issio n T-1 3 mm A n q ie • 2 Power i - 1 T W}/ n i i i ? im AI/IV Tim in « ì x u rliti rn a * m ax 940 nm GaAs Í 76'i NOM .062 1.1.32 .032 (-052) !r /VP; ¿di.-iní “ T 800 (20.3)

L14F1 phototransistor datasheet

Abstract: L14F1 PHOTOTRANSISTOR phototransistor 3 pin L14F1 Phototransistor L14F1 l14f1 ir phototransistor T1 L14F1 Phototransistor L14G3 L14F1 PHOTOTRANSISTOR PIN opto transistor moc 12v LED 55 with L14F1 phototransistor
Contextual Info: Optoelectronics Light Emitting Diodes Light Emitting Diodes LED , Plastic Package Ie (mW/sr) CIF = 100 mA Max IR (µA) @ VR = 5V Emission Angle in Degrees (°) @ 1/2 Intensity Wavelength (nm) λp Min Max Max VF (V) @ IF = 100 mA QEC112 6 30 1.7 10 24 940

QED234

Abstract: ir diode 940 nm sidelooker DIODE power diode package QEC121 QED233 QEC112 QEC113 QEC122 QEC123
Contextual Info: Optoelectronics Plastic Light Emitting Diodes Ie @ 100 mA IF mW/sr IR @ 5 V VR (µA) max Emission Angle in Degrees (°) @ 1/2 Power Wavelength (nm) λp min max VF @ 100 mA IF (V) max QEC112 6 30 1.7 10 24 940 QEC113 14 – 1.7 10 24 940 QEC121 14 – 1.9

4n35 optocoupler spice model

Abstract: L14F1 phototransistor datasheet MOC3043-M spice model H11F1 SPICE MODEL h11D1 spice MOC3010 spice L14F1 PHOTOTRANSISTOR slotted optocouplers DARLINGTON phototransistor l14f1 spice MOC3011
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SEC TIP 127

Abstract: QEA123
Contextual Info: ÖUALITY TECHNOLOGIES CORP 3flE D Ei 74bfcjflSl 0003*^37 5 D ö T Y T - m - n INFRARED LIGHT EMITTING DIODES Characteristics at 25° C P ara­ m eter Emission A ngle a t Vi Power T est C ondi­ tions Peak W avelength A pertured R adiant Incidence If If = 20 m A

220v AC voltage stabilizer schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.

L14F1 phototransistor datasheet

Abstract: l14f1 ir phototransistor PIN CONFIGURATION OF L14F1 L14F1 PHOTOTRANSISTOR Phototransistor L14F1 MEXICO TRANSMISSIVE SENSOR l14f1 phototransistor data opto transistor moc CQX 89 Phototransistor L14G3
Contextual Info: Infrared Products Selection Guide Analog Discrete Interface & Logic Optoelectronics July 2002 • • • • • • Electrical and Optical Specifications Absolute Maximum Ratings Package Specifications Ordering Information Glossary of Terms Frequently Asked Questions

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

se113

Contextual Info: INFRARED COMPONENTS AND ASSEMBLIES opmLEcmmcs INFRARED COMPONENTS AND ASSEMBLIES Alphanumeric Product Listing Product Page Product Page Product Page 1N6264 . .3-127 1N6265 . . 3-131 1N6266 . . 3-135

irf 3502

Abstract: S12-1A02-01L PALCE16V8Z25PC RSF74Y100RM REF198 S10K250 PALCE16V8Z-25PC SA555P P6KE36A sa5205ad
Contextual Info: Semiconductor Directory Mfr.Õs Type Mfr.Õs Code Page Mfr.Õs Type Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 7.40 6.75 10.56 6.29 1.63 ADI ADI ADI ADI INT Ñ Ñ Ñ Ñ Ñ S10K14 S10K150 S10K20 S10K25 S10K250 Price Mfr.Õs Type Mfr.Õs Code Page

Contextual Info: GEO OPTOELECTRONICS PLASTIC INFRARED LIGHT EM ITTIN G DIODES E m is sio n T-1 3 mm A n g le @ Part Num ber •e R a d ia n t In te n s ity 1/2 P o w e r V F/ I F ■r ' V r V /(m A | ( mA )/ i v i m in max u n its m ax max 30 mW/sr 1.50/20 10/5 1 — mW/sr

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

H12E

Abstract: QRD1114-ND QRB1134 QEC113-ND RPM7238-H9R QRB1134-ND TO-46 RPM5338-H14 RPM7138-H4R-ND QRB1114-ND
Contextual Info: Infrared Photosensors and Emitters Fig. 1 Semiconductor Infrared Emitters IRED LEDs Fig. 2 2 Orange(A) Green(K) Blue(E) White(C) 3 1 Fig. 3 – TO-46 2 Lead Fig. 4 – TO-46 Flat Window 2 Lead 3 1 4 4 2 For- Max. Peak ward Forward Minimum Beam Wave- Volt. Current Power Angle Length

MAN-8610

Abstract: CNW82 HLMPD150A CNY17GF-1
Contextual Info: ËQ OPTOELECTRONICS P art N u m be r 1N6264 1N6265 1N6266 PART NUM BER INDEX P art N u m be r Page 95 _ 95 95 Page P art N u m be r Page P art N u m b e r Page P art N u m b e r Page CNW135 CNW135.300 15 CNY17GF-3.300 12 12 75 75 13 CNY17GF 4 GMC7975C GMC7975CA