Q03D Search Results

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bbS3^31 Q03D70S 77fl W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in

BUF460DF

Abstract: 1251C BUF460DV
Contextual Info: 30E » • ? c12t1S3 7 Q03D3b2 - Y gY 4 ■ -T hom son - S G S -T H O M S O N b u p [ * ^ » [ 1 ( 0 ‘ B U F460D V * S 460D F _ NPN DARLINGTON POWER MODULE PRELIMINARY DATA ■

Contextual Info: ANALOG DEVICES INC 42E □ D • OaibAOQ Q03D1D0 ANA AN ALO G 12-Bit 200 kSPS D E V IC E S _ Complete Sampling ADC 1 - 61 -10-/2 AD678* FEATURES A C and DC Characterized and Specified K, B and T Grades 200k Conversions per Second 1 MHz Full Power Bandwidth

CNW11AV-2

Abstract: Optocoupler 601 BS415 BS7002 optocoupler ic MCB903 CNW11AV-1
Contextual Info: PHILIPS MIE D INTERNATIONAL • 7110ô2b Q03DMB4 1 ■ PHIN P h ilip s S e m ic o n d u c to rs Product specification Heavy duty optocouplers CNW11AV-1/2/3 FEATURES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body encapsulation with a

t250v

Abstract: philips pac 03
Contextual Info: 7110ûEb Q03D4S2 b B P H I N 41E D PHILIPS INTERNATIONAL r - v / - 8 3 P ro du ct sp ecification Philips S em ico n d uctors CNW84/CNW85 Heavy duty optocouplers B9 FEA TUR ES • Minimum 2 mm isolation thickness between emitter and receiver • A wide body DIL encapsulation

CNW136

Abstract: Optocoupler 601 pulse transformer 4502 BS415 BS6301 BS7002 CNW135 CNW4502 MC8365
Contextual Info: P H ILIP S INTERNATIONAL HIE D • 7110ß2b 003Q4ba T MPHIN T - V Philips Semiconductors _ Product specification Wide body, high isolation, high-speed optocouplers FEATURES • Wide body DIL encapsulation, with a pin distance of 10.16 mm

Contextual Info: F/ CYPRESS PRELIMINARY W 48C 101-01 Spread Spectrum BX System Frequency Generator Features CPU0:3 Clock S ke w :. 175 ps • Maximized EMI suppression using Cypress’s Spread Spectrum technology • Four copies of CPU output

1001d

Contextual Info: CYPRESS PRELIMINARY C Y 7 C 95 4D X ATM HOTLink Transceiver Features technology, functionality, and integration over the field proven CY7B923/933 HOTLink. Second generation HOTLink technology UTOPIA level I and II compatible host bus interface Three-bit Multi-phy address capability built-in

Contextual Info: KM 4 1 6 C 1 2 0 0 B T CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh

Contextual Info: KM416V1004BJ CMOS DRAM ELECTR ONICS 1M x16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: N A PIER PHILIPS/DISCRETE b^E » • b b S B ' m D030E11 4b7 « A P X J V BGY32 BGY35 BGY33 BGY36 VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 S2 load.

Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E D • bbS3T31 0030715 N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications.

BGY33

Abstract: "Amplifier Modules" Philips bgy32 Philips BGY36 VHF Power amplifier Module philips rf power amplifier module BGY32 BGY35 88-108 rf amplifier an power 88-108 mhz BGY36
Contextual Info: N AMER PHILIPS/DISCRETE • bRE » BGY32 BGY33 BGY35 BGY36 bb53T31 003Q211 4b7 H A P X VHF POWER AMPLIFIER MODULES A range o f broadband amplifier modules designed fo r mobile communications equipments, operating directly from 12 V vehicle electrical systems. The devices w ill produce 18 W output into a 50 £2 load.

BUK454-800A

Abstract: BUK454-800B T0220AB
Contextual Info: N AUER PHILIPS/DISCRETE fc^E D • bb53T31 D030b35 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

AM28F256

Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current

BUK441

Abstract: BUK441-100A BUK441-100B
Contextual Info: N AMER PHILIPS /D I SCRE TE b'JE I m ^53^31 003DS05 TOb • APX Philips Semiconductors Product Specification PowerMOS transistor G E N E R A L DESCRiPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: MITSUBISHI LS Is <DRAM MODULE M H4M724CTJ-6,-7 FAST PAGE MODE 301989888-BIT 4194304-WORD BY 72-BIT) DYNAMIC RAM DESCRIPTION The M H 4M 724C TJ is 4 1 94304-w ord x 72-bit dynamic RAM module. This consists o f eighteen industry standard 4M x 4 dynamic RAMs in TSOP and tw o industry standard input

transistor 467 sgs

Abstract: 0809 al diode sg 5 ts sgs30da070
Contextual Info: 30E i • 7*121237 QQ3Qbb4 =1 ■ /T T SCS-THOMSON ^ 7 # s IL E « ! ' T i3 3 - ' S 5 " SG S30D A 070D S G S-THOMSON NPN DARLINGTON POWER MODULE ■ POWER MODULE WITH INTERNAL ISOLA­ TION 2500V RMS . LOW Rth JUNCTION TO CASE ■ FREEWHEELING DIODE

Contextual Info: KM416C1004BJ CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x16 bit Extended Data Out CMOS DRAMs. Dxtended Data Out mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

K545

Contextual Info: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

TSG25N100DV

Abstract: TSG25N100DF ISG25 3641b
Contextual Info: 30E D S G S -T H O M [* [F 3 m m 7 cj a c}237 QQ3QS24 M • S O N T IS G 2 5 N 1 0 0 D F [IO T 2 [* S T S G 2 5 N 1 O O D V ISOLATED GATE BIPOLAR TRANSISTOR (IGBT) _ ISOTOP POWER MODULE S G S-THOMSON ■ ■ . . . VOLTAGE-CONTROLLED GATE LOW ON-VOLTAGE DROP VcE(sat)

Contextual Info: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode

Contextual Info: Us e r 's m a n u a l <£>ZiLOE C hapter 5 Z 1 6 C 3 2 IU S C ’ S e r ia l m o d e s a n d P r o t o c o l s 5.1 INTRODUCTION The main advantage of USC family members is that they can comm unicate in many different modes and serial protocols. This, in turn, makes for more flexible and ca­

qpsk modulator chip stanford telecom

Abstract: 39HXC
Contextual Info: <$2¡L0E A d v a n c e In f o r m a t io n S p e c if ic a t io n Z2000 S prea d -S pectrum T r a n s c e iv e r FEATURES BENEFITS • C o m p le te D ire c t S e q u e n c e S p re a d -S p e c tru m Transceiver in a Single CMOS 1C ■ High Performance and High Reliability for Reduced