E 1007
Abstract: PTB23002U
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PTB23002U NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network
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ptb23002usca53127147/00/02/pp12e 1007 |
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MRF648
Abstract: TPV3100 2SC2897 macom TP3034 SD1393 TP3008 tp9383 transistor 2sC636 MRF255 equivalent
Contextual Info: Cross References June 1999 RF PRODUCTS P/N CROSS REFERENCE VENDOR NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC NEC
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2n59442n59452n59462n6082+162n60842n64392sc12572sc12582sc12592sc1605amrf648tpv31002sc2897macomtp3034sd1393tp3008tp9383transistor 2sc636mrf255 equivalent
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Philips Semiconductors Selection Guide
Abstract: LTE42005S BLS2731-10
Contextual Info: SELECTION GUIDE Page Pulsed power transistors for radar 8 Pulsed power transistors for avionics 8 Linear power transistors 9 CW power transistors 10 Oscillator power transistors 10 Philips Semiconductors Microwave transistors Selection guide PULSED POWER TRANSISTORS FOR RADAR
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rx1214b80wrx1214b130yrx1214b170wrx1214b300y+8rx1214b350yrz1214b35yrz1214b65ybls2731-10bls2731-20bls2731philips semiconductors selection guidelte42005s
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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dn-4074abt12674abt2240x3g-bzx84-c7v5+11x3g-bzx84-c9v1ph 4148 zener diodephilips zener diode ph 4148pcf0700pzener diode ph 4148pca1318pck2605pcf0700p/051philips pca1318pon4673zener diode 4148
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Philips tea1090
Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS
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dn-41lo9585/wdlo9585lo9700+14oq8845t/k3oq8868hp/k6qfp47x2g-buk5r3-100bphilips tea1090tea1090tea1402pcf2705pphilips tea1090tsaa7321gptda2579almt 393 ntda3653bqtea5713
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erie capacitor
Abstract: PTB23002U SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer
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ptb23002uot440aot44qaerie capacitor+1sc15
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SD1446
Abstract: SD2910 philips blx15 BLV36 BLW60C st cross reference blw97 SD4575 BLV103 MX0912B350Y
Contextual Info: June 1999 ST CROSS REFERENCE WITH PHILIPS INDUSTRY PART NUMBER BGY916 BLF145 BLF175 BLF177 BLF242 BLF244 BLF245 BLF245B BLF248 BLF278 BLF348 BLF368 BLF378 BLF548 BLU10/12 BLU20/12 BLU30/12 BLU30/28 BLU45/12 BLU60/12 BLU60/28 BLU97 BLU99 BLV12 BLV13 BLV30 BLV31
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bgy916blf145blf175blf177+16blf242blf244blf245blf245bblf248blf278sd1446sd2910philips blx15blv36blw60cst cross referenceblw97sd4575blv103mx0912b350y
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LFE15
Abstract: LAE4001R BLS2731-50 BLS2731-10
Contextual Info: Philips Semiconductors Microwave Transistors Index ALPHANUMERIC INDEX Types added to the range since the last issue of Handbook SC15 1995 issue are shown in bold print. TYPE PAGE TYPE PAGE BLS2731-10 30 PLB16012U 247 BLS2731-20 33 PLB16030U 252 BLS2731-50
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Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Very high power gain • Internal input prematching network • Diffused emitter ballasting resistors improve ruggedness • Interdigitated emitter-base structure • Gold metallization with barrier layer
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ptb23002u |
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FO-229
Contextual Info: 69 RF/Microwave Devices Microwave Transistors, Continuous Power cont. Type No Package Outline ' f " (GHz) (V| PL1"> (W) Gpo<2) (dB) CLASS A, MEDIUM POWER (cont.) LA E4001R LA E4 002 S LTE4002S LTE42005S LTE42008R LTE42012R 4.0 4.0 4.0 4.2 4.2 4.2 15 18 18
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