MRF1035 Search Results

motorola J122

Abstract: MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
Contextual Info: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

Contextual Info: Order this data sheet MOTOROLA by M R F10350H /D SEMICONDUCTOR TECHNICAL DATA MRF10350H* Microwave Pulse Power Transistor 350 Watts Peak NPN 1025-1150 MHz C P T iO Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

Contextual Info: MOTOROLA Order this document by MRF1035MB/D SEMICONDUCTOR TECHNICAL DATA MRF1035MB Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 D e sig n e d fo r 1 0 2 5 -1 1 5 0 M H z p ulse c o m m o n b a se a m p lifie r a p p lic a tio n s such as T C A S , T A C A N and M o d e -S tra n sm itte rs. •

MRF10350

Abstract: TACAN
Contextual Info: MRF10350 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. PACKAGE STYLE .400 2NL FLG A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B ØD C FEATURES: C E F • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz

motorola J122

Abstract: MOTOROLA transistor 413 transistor j380 51 MRF10350
Contextual Info: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA Microwave Pulse Power Transistor MRF10350 Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

NPN 350W

Abstract: TACAN transistor 350w TACAN transistor MRF10350 MRF10
Contextual Info: MRF10350 Microwave Pulse Power Silicon NPN Transistor 350W peak , 1025–1150MHz M/A-COM Products Released - Rev. 07.07 Product Image Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed performance @ 1090 MHz

MOTOROLA transistor 413

Abstract: Mode-S transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistor MRF10350 Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak

transistor j380

Abstract: MRF10350
Contextual Info: Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

MRF1035MA

Abstract: MRF1035MB
Contextual Info: MOTOROLA Order this document by MRF1035MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1035MA MRF1035MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MRF1035MB

Abstract: TACAN
Contextual Info: MRF1035MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1035MB is Designed for Class C, DME/TACAN Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL A A C .100x45° FEATURES: • Internal Input Matching Network • PG = 10 dB at 35 W/1090 MHz

42673 lc

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Pow er Transistor MRF10350 Designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak

150 watts power amplifier layout

Abstract: j8 er capacitor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1035MA MRF1035MB The RF Line M icrowave Pulse Power Transistors . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

transistor j380

Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak

MRF1035MC

Abstract: FC3B
Contextual Info: 12E D § fc3b?2S4 0 0 0 7 ^ 2 MO TORO LA SC 3 | -r -s v if XSTRS/R F MOTOROLA SEM ICONDUCTOR MRF1035MA MRF1035MB MRF1035MC TECHNICAL DATA The RF Line 35 W P E A K — 9 6 0 -12 15 MHz MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N

Z1-Z10

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Pulse Power Transistors MRF1035MB Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

transistor j380

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10350 The RF Line M icrowave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • 350 W PEAK 1025-1150 MHz MICROWAVE POWER

MRF1035MB

Contextual Info: MOTOROLA Order this document by MRF1035MB/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1035MB Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

Contextual Info: MRF10350 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF10350 is Designed for TCAS/TACAN Applications up to 1090 MHz. PACKAGE STYLE .400 2L FLG A A 4x .062 x 45° 2xB C C F E FEATURES: .040 x 45° D G • Internal Input Matching Network • PG = 8.5 dB at 350 W/1090 MHz

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

MHW707-2

Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Contextual Info: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

2N4427 equivalent bfr91

Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability