MRF10 Search Results

motorola J122

Abstract: MOTOROLA transistor 413 motorola 803 transistor transistor j380 MRF10350 motorola rf Power Transistor J122 npn
Contextual Info: MOTOROLA Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz

MRF10500

Abstract: motorola K 626 J189 500 watts amplifier MRF10501 0395 ADC
Contextual Info: MOTOROLA Order this document by MRF10500/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF10500 MRF10501 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters.

MRF1004MA

Abstract: TACAN TACAN 41 J295
Contextual Info: MOTOROLA Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1004MA Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

200E

Abstract: MRF1047 MRF1047T1
Contextual Info: Order this document by MRF1047T1/D MRF1047T1 Advance Information NPN Silicon Low Noise Transistor RF NPN SILICON TRANSISTOR The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and

MRF1002MB

Abstract: TACAN TACAN transistor
Contextual Info: MRF1002MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L PILL A The ASI MRF1002MB is Designed for Class C, DME/TACAN Applications up to 1150 MHz. A .1 0 0 x 4 5 ° 1 FEATURES: C 3 B 4 • Class C Operation • PG = 9.0 dB at 2.0 W/1150 MHz

MRF1004MB

Abstract: TACAN
Contextual Info: MRF1004MB NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF1004MB is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. PACKAGE STYLE .280 4L PILL A B FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz

Contextual Info: Order this data sheet MOTOROLA by M R F10120H/D SEMICONDUCTOR TECHNICAL DATA MRF10120H* MHz Microwave Power Transistor 120 Watts NPN 960-1215 MHz .ill! CPT0 Designed for long pulsed common base amplifiers. Guaranteed Performance at 1215 MHz - Output Power = 120 Watts Peak

Contextual Info: Order this data sheet MOTOROLA by M R F10350H /D SEMICONDUCTOR TECHNICAL DATA MRF10350H* Microwave Pulse Power Transistor 350 Watts Peak NPN 1025-1150 MHz C P T iO Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

Contextual Info: MRF1015MC Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)17.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition)50

motorola rf Power Transistor t 228

Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

Contextual Info: MOTOROLA Order this document by MRF1035MB/D SEMICONDUCTOR TECHNICAL DATA MRF1035MB Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc

j325

Abstract: erie redcap capacitors MRF1002MA MRF1002MB
Contextual Info: MOTOROLA Order this document by MRF1002MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1002MA MRF1002MB . . . designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters.

MRF1004MA

Abstract: TACAN TACAN transistor
Contextual Info: MRF1004MA NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .280 4L STUD The ASI MRF1004MA is Designed for Class B and C, TACAN, IFF, and DME Applications up to 1090 MHz. FEATURES: • Class B and C Operation • Common Base • PG = 10 dB at 4.0 W/1090 MHz

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200E MRF1047 MRF1047T1
Contextual Info: Freescale Semiconductor, Inc. Order this document by MRF1047T1/D The MRF1047T1 is fabricated utilizing Motorola’s latest 12 GHz fτ discrete bipolar silicon process. The minimum noise figure is 1.0 dB at VCE = 3.0 V and IC = 3.0 mA. The noise performance of the MRF1047T1 at low bias makes

D10N2

Abstract: marking dC
Contextual Info: Order this data sheet by MRF10070H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10070H* Microwave Pulse Power Transistor 70 Watts Peak NPN 1025-1150 MHz Designed for 1025-1150 MHz pulse common base amplifiers. C P liO • Guaranteed Performance at 1090 MHz - Output Power = 70 Watts Peak

MRF1008MC

Contextual Info: IS E 3 I t3ti75SM GGfiTTflM 4 | MOTORCLA SC XSTRS/R F MOTOROLA SEM ICO NDUCTOR MRF1008MA MRF1008MB MRF1008MC TECHNICAL DATA The R F L in e 8.0 W P E A K 9 6 0 -1 2 1 5 M H z MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS N P N S IL IC O N . . . design ed for C la ss B and C com m on-base amplifier applications

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1032 The RF Line UHF Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 6.0 W, TO 1.0 GHz UNEAR UHF POWER TRANSISTOR

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 D e sig n e d fo r 1 0 2 5 -1 1 5 0 M H z p ulse c o m m o n b a se a m p lifie r a p p lic a tio n s such as T C A S , T A C A N and M o d e -S tra n sm itte rs. •

MRF1000MA

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistors MRF1000MA MRF1OOOMB . . . d e s ig n e d fo r C la ss A a n d A B co m m o n e m itte r a m p lifie r a p p lic a tio n s in the lo w -p o w e r sta g e s of IFF, D M E , T A C A N , ra d a r tra n sm itte rs, a n d C W s yste m s.

Contextual Info: Order this data sheet by MRF10500H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10500H’ Microwave Pulse Power Transistor 500 Watts Peak NPN 1025-1150 MHz C FTÌ0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

Contextual Info: MOTOROLA SEMICONDUCTOR MRF1000MA MRF1000MB TECHNICAL DATA The RF Line 0 .7 W CLASS A/AB MICROWAVE POWER TRANSISTORS MICROWAVE PULSE POWER TRANSISTORS . . d e s ig n e d fo r C lass A and A 8 c o m m o n e m itte r a m p lifie r a p p lic a tio n s in th e lo w -p o w e r s ta g e s of IFF. D M E , T A C A N , ra d a r

Motorola Power Transistor

Abstract: motorola rf Power Transistor case 244-04 MOTOROLA POWER TRANSISTOR rev 6 MRF1030 MOTOROLA TRANSISTOR 726
Contextual Info: MOTOROLA Order this document by MRF1030/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor MRF1030 . . . designed primarily for wideband, large–signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers

376B

Abstract: MRF10031 motorola rf Power Transistor
Contextual Info: MOTOROLA Order this document by MRF10031/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10031 Designed for 960–1215 MHz long or short pulse common base amplifier applications such as JTIDS and Mode–S transmitters. • Guaranteed Performance @ 960 MHz, 36 Vdc

MRF10120

Abstract: motorola rf Power Transistor MOTOROLA 381 equivalent transistor j222 J280
Contextual Info: MOTOROLA Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Long Pulse Power Transistor MRF10120 Designed for 960–1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc