T2T TRANSISTOR
Abstract: BFR591
Contextual Info: Philips Semiconductors bbS3^31 DD31T1E T2T • APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHILIPS/DISCRETE FEA TU R ES b'lE D ■ PINNING • High power gain PIN • Low noise figure 1 emitter • High transition frequency 2
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SOT103
Abstract: BFR591 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425
Contextual Info: Philips Semiconductors Preliminary specification " NPN 8 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES • BFR591 711Qfi2b ÜOM5Sfll 425 H P H I N PINNING High power gain PIN • Low noise figure • SbE 7 =3 3 -0 5 1 High transition frequency • Gold metallization ensures
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bfr5917110fl2fcot103usb037+8is21isot103transistor sot103transistor 1038sot-103bfr59npn planar rf transistortransistor k 425
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SOT-103
Abstract: SOT103 BFR591 transistor SOT103 MSB037
Contextual Info: • tjbS3T31 DDBlTiE TET M APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHIL I P S / D I S CR E T E FEATURES b^E » ■ PINNING • High power gain PIN • Low noise figure • High transition frequency • Gold metallization ensures
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bfr591ot103msb037is21i2+3sot-103sot103transistor sot103
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fr91a
Abstract: philips bfq FQ235a t122 25 3 FQ262a fr90a 122e BFR134 t122 25 10 t122 25 72
Contextual Info: 22 Small Signal Leaded Devices Wideband Transistors cont. h FE R a tin g s Type P ackage v CEO V S O T -103 S O T -103 S O T -103 S O T -103 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 S O T -173 TO -72 S O T -173 S O T -122 S O T-37 TO -72 TO -72
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bfg96bfp96bfp505bfp520+16bfp540bfq33cbfq63bfq65bfq66bfq161fr91aphilips bfqfq235at122 25 3fq262afr90a122ebfr134t122 25 10t122 25 72
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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BF547A
Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
Contextual Info: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS
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lcd01bf547atransistor bf 175bfg65 equivalent+2bf547bbfg25axd
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BFT92A
Abstract: BFT93A BFG134 bf689 sot37 sot173 BFG34 BFQ52 bfg65 sot143 philips bfw92
Contextual Info: 52 RF/Microwave Devices First Generation RF W ideband Transistors fT to 3.5 GHz metal can fr/ lc Curve Polarity (1) (2) N PN NPN (3) (4) (5) NPN NPN NPN (6) (18) NPN NPN TO-39 surface mount plastic TO-72 TQ-92 BFY90 BF689K BF763 BFW30 SOt-37 ceramic SOT-122E
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bfy90tq-92bf689kbf763+16sot-37bft24bfw92bfw93ot-122eot-23bft92abft93abfg134bf689sot37sot173bfg34bfq52bfg65 sot143philips bfw92
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4000 npn
Abstract: 122e
Contextual Info: 56 RF/Microwave Devices RF Wideband Transistors Type No. BFQ54T BFQ63 BFQ65 BFQ66 BFQ67 BFQ67W BFQ68 BFQ108 BFQ135 BFQ136 BFQ149 BFQ270 BFQ621 BFQ741 BFR53 BFR90 BFR90A BFR91 BFR91A BFR92 BFR92A BFR92AW BFR93 BFR93A BFR93AW BFR94A BFR95 BFR96 BFR96S BFR106
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bfq54tbfq63bfq65bfq66+8bfq67bfq67wbfq68bfq108bfq135bfq1364000 npn122e
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BFG591 amplifier
Abstract: SC08a bfr591 sot173x BB544 sot122 sot172 bfg65 sot143 SIEMENS BFP520 macro-X ceramic
Contextual Info: Philips Semiconductors Semiconductors for Telecom systems Selection List General For further information, refer to Data Handbook S C 1 4,1993; "RF Wideband Transistors", except otherwise specified. RF wideband transisto rs March 1993 14 Philips Semiconductors
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ot122ot143ot223ot323+16bfs17wbfg17abfg16abf547wbf747wbft25bfg591 amplifiersc08abfr591sot173xbb544sot122sot172bfg65 sot143siemens bfp520macro-x ceramic
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