TJBS3T31 Search Results

SOT-103

Abstract: SOT103 BFR591 transistor SOT103 MSB037
Contextual Info: • tjbS3T31 DDBlTiE TET M APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHIL I P S / D I S CR E T E FEATURES b^E » ■ PINNING • High power gain PIN • Low noise figure • High transition frequency • Gold metallization ensures

BLW 95

Contextual Info: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is

MRC23

Abstract: URC204 BSP152
Contextual Info: Philips Semiconductors bbS3T31 0023053 IflS IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N A PIER P H I L I P S / D I S C R E T E FEATURES b7E SYMBOL v DS • High-speed switching • No secondary breakdown. N-channel enhancement mode

Contextual Info: Philips Semiconductors Product specification High voltage optocouplers SL5582W/S L5583W FEATURES • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm minimum and an external creepage of 10 mm minimum • High current transfer ratio and a

m2131

Abstract: diode lt 246 M2132 BYT230PI-300 BYT230PIV-200 IEC134 M3037 D1075
Contextual Info: N AMER PHILIPS/DISCRETE D E V tL U H M L N I SSE D • bbS3T31 D 0 2 S 4 ci3 ÜAIA S ■ BYT230PIV200-400 T h is data sheet co n ta in s advance in fo rm a tio n and sp e c ific a tio n s are su b je ct to change w it h o u t n o tic e . 7 ^ ¿ > 3 -/9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES

Contextual Info: l N AUER PHIL IPS/DISCRETE 25E D ^ 5 3 1 3 1 00227b? 5 • BYW31 SERIES TZOZ - i 9 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery