PT97 Search Results

PT9734

Abstract: arco 404 PT9730 Arco 403 PT9731 ARCO 0.1 Z PT9732 PT8731 9730 motorola SO 402 NH
Contextual Info: MOTOROLA SC X S T R S /R F MbE D m b 3 b ? 2 S 4 00=15143 S MOTOROLA “T SEMICONDUCTOR - 3 ^ O ( TECHNICAL DATA PT973p Series The RF Line V H F Pow er Transistors . . . designed primarily for wideband, large-signal output amplifier stages in the 30-200 MHz frequency range.

PT9702B

Contextual Info: PT9702B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9702B is a Common Emitter Device Designed for Class AB and C Amplifier Applications in the 220 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization

PT9730

Contextual Info: PT9730 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9730 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD FEATURES: .112x45° • Common Emitter • PG = 10 dB at 10W/175 MHz • Omnigold Metalization System

PT9704

Abstract: TRANSISTOR pt9704 TRANSISTOR TC 137 transistor 832
Contextual Info: PT9704 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9704 is Designed for wideband, large-signal amplifier Applications up to 500 MHz. PACKAGE STYLE .280" 4L STUD A 45° C FEATURES INCLUDE: E B • Gold Metalization • Diffused Ballast Resistors

PT9700

Contextual Info: PT9700 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9700 is Designed for High Power Class C Amplifier, in 225 to 400 MHz Military Communication Equipment. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class C Operation • PG = 13 dB at 1.0 W/400 MHz

PT9784

Abstract: PT9784A tube amplifier power transformers VK21107-3B Unelco
Contextual Info: 1EE D I fc 3fc>7E5M O G fiflltM MOTOROLA SC M O TO RO LA XSTRS/R M | 'p - S V lS ' F SEMICONDUCTOR TECHNICAL DATA PT9784 PT9784A The RF Line SS B Pow er Transistors 15 d B 2 -3 0 M H z 75 W A T T S PEP 13.5 V O L T S S S B PO W ER T R A N S IS T O R S . , , d esign ed prim arily for w ideband, large-signal output and driver amplifier sta ge s in

PT9732

Abstract: TRANSISTOR W 59
Contextual Info: PT9732 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9732 is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 12 dB min.

b0743

Abstract: KT819A B0545 BOT54 PT9784 2N3055-5 mje1660 40636 1561-0403 044VH4
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 .- 10 15 20 >= 30 PT9784A 2N3055/5 SPT3713 SOT9210 044VH1 BLW97 40325 2SC2609 ~~~~~~ 35 40 45 50 S01480 B0142 S3771 BOX13 BOX13 BOX13 40251 MJ2801 MJ2801 MJ2801 KT819A 1561-0403 1561-0404 1561-0404 BOX13/40251

C312 diode

Abstract: 2SC3238A BLY87A 2SC2983Y BLW80 2SC731 BSS42 2SD1220Y acrian acrian inc
Contextual Info: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 40665 2N5215 C2-8Z C3-12 2SC1947 2SC1965 2N5080 BFY99 ~~~~~69 25 30 2SC731 2SC731 BlY53A 2SC1966 BLX93A BLX68 BLX68 BlW80 ~~~~~7 35 40 MH8112 MH8113 2SD439 2SD1681 2SC2690 2SC2690A PT9732 2SC3292

pt9701

Abstract: 55AD
Contextual Info: PT9701 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701 is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization

Contextual Info: PT9796 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)50 I(C) Max. (A)8.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)140þ I(CBO) Max. (A)10mx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

B0813

Abstract: PT9787 8C440 MJ3237 trw PT9787 MM4048 MJE42C MJ2841 MOTOROLA MM1758 mmt2857
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 NA31KY NA31MH NA31 MY SK3248 NA31KI NA31MI NA31KJ NA31MJ ~~~~g: 25 30 2NS204 S15-28 SMl5501 SMl550S SMl5511 SMl5901 SMl590S SMl5911 ~~~j~~ 35 40 80Y10 80Y10 PT9787 PT9787A 2N4431 2S022S 2S0226 SOT4301

TRANSISTOR c801

Abstract: PT9785 Stackpole ferrite arco 467 CL-425 A723
Contextual Info: j'- S S -jÇ ' 12E 0 § fc>3b7254 GDââlbb fl | MOT OROL A SC MOTOROLA XSTRS/R F SEM ICO N D U CTO R TECHNICAL DATA PT9785 The RF Line S S B Pow er Transistor . designed primarily for wideband, large-signal output and driver amplifier stages In the 2 to 30 MHz frequency range.

PT9731

Abstract: PT9734 inducto pt9732
Contextual Info: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA PT9730 Series The RF Line VHF Power Transistors . . . d e s ig n e d p r im a r ily fo r w id e b a n d , la r g e - s ig n a l o u tp u t a m p lifie r s t a g e s in the 3 0 - 2 0 0 M H z f re q u e n c y ra nge .

PT9733

Abstract: PT97
Contextual Info: PT9733 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9733 is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD

Contextual Info: PT9788 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)70 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)70 Maximum Operating Temp (øC)140þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

PT9704B

Abstract: PT9700B 97028 PT9703B PT9701B PT9702B 9703b PT9703 PT-9700
Contextual Info: MOTOROLA SC 4bE D XSTRS/R F • b3b?2S4 0013130 5 ■PlOTt T=-3 3 - 0 I MOTOROLA ■i SEM ICONDUCTOR TECHNICAL DATA PT9700B Seriös The RF Line UHF Pow er T ran sisto rs TO 400 MHz 5 TO 30 WATTS UHF POWER TRANSISTORS NPN SILICON . . . designed primarily for wideband, large-signal output and driver amplifier stages in

vqb28

Abstract: PT-9700
Contextual Info: 1EE 0 I b3b?5S4 Q0ââl43 7 | MOT OROL A SC MOTOROLA T-33 -OS' XSTRS/R F * SE M IC O N D U C T O R TECHNICAL DATA PT9700 Advance Inform ation The RF Line U H F P o w e r T ra n sisto r 1.5 W — 400 M H z UHF PO W ER T R A N S IS T O R The PT9700 is a high gain transistor d esigned for class C operation. M icrow ave cellu­

TI494

Abstract: THP47 TF80 siemens TE3904 TI381 TIP-24 TF260 TI389 TI-494 TH415
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 (A) ESM952 ESM752A ESM952A BOY57A BOY57A BOY58R BOY58R PT9847 2SG3240 PT9785 C04262 SSP70 TIP35 1763-0420 1768-0420 SOT79821 SOT79821 B0249 2N1830 2N2130 SSP70A TIP35A B0249A 2N5885 SOT79822

KT827B

Abstract: KT935A BDX61 kt827 rcs258 TO3VAR package
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V BR CEO Of) (A) hFE fT •CBO Max PD Max toN Max ON) Min (Hz) (A) (8) r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) 10 MRF422 MRF422 PT9780

PT9701B

Contextual Info: PT9701B NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9701B is a Common Emitter Device Designed for Class A , AB and C Amplifier Applications in the 225 - 400 MHz Military Communications Band. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: • Gold Metalization

T9702B

Abstract: PT9704B PT9700B PT9703 PT9700 T9702
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PT9700B Series The RF Line U H F P o w e r T ra n s is to rs T O 400 M H z 5 T O 30 W A T T S U H F PO W ER . . desig n ed p rim a rily fo r w id e b a n d , large-signal o u tp u t and d riv e r a m p lifie r stages in

PT9780

Contextual Info: 12E D I MOTOROLA • i SEM ICO ND U C TO R mvm t.3b?2SW 0 0 f l f l l5 â MOTOROLA SC X S T R S /R T I F T-n-iz _ w a sa m TECHNICAL DATA PT9780 The RF Line SSB Power Transistor . . . designed prim arily for w ideband, large-signal output and driver am plifier stages in

B0599

Abstract: PT9796A 2N5983 2N5862 2n5036 2N6368 B0301 tlp560 2N5037 acrian inc
Contextual Info: POWER SILICON NPN Item Number Part I C 5 10 Number 20 TIP57A TIP561 TIP58A TIP58A TIP58A FT413 FT413 TIP537 ~:~g • 25 30 BU207A BU208A BU412 BU412 BU411 BU411 40633 40633 ~~:~g 35 · 40 MJ4247 MRF240 J·ZER03055 2SC2629 S25-12 2N6368 PT9796 PT9796A ~~~~~~H