PSEUDOMORPHIC HEMT Search Results

CF004

Abstract: CF004-01 CF004-02 CF004-03 pseudomorphic HEMT
Contextual Info: CF004 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 1.5 dB at 18 GHz □ High Gain: Usable to 44 GHz □ Flat Gain for Distributed Amplifiers □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

CF001-03

Abstract: CF001 GaAs FET HEMT Chips CF001-01 CF001-02 celeritek ghz CFB001
Contextual Info: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 GHz □ High Gain: Usable to 44 GHz □ P idB P°wer: U p t0 +19 dBm □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure

CF003

Abstract: CF003-01 CF003-02 CF003-03 CFC003
Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PjdB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

CFC003

Abstract: celeritek CF003 CF003-01 CF003-02 CF003-03 MS03 celeritek ghz
Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PldB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

Transistor TT 2246

Abstract: A004R ATF-36163 ATF-36163-BLK ATF-36163-TR1
Contextual Info: ATF-36163 1.5 –18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor PHEMT , in the SOT-363 (SC-70) package. When optimally matched for minimum noise figure, it will provide a noise figure of

Contextual Info: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: Usable to 44 GHz □ ^ ld B P °wer: Up t0 +19 dBm J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure

Contextual Info: CF004 Series GaAs Pseudomorphic HEMT and MESFET Chips J Super Low Noise: 1.5 dB at 18 G H z □ High Gain: Usable to 44 GHz □ Flat Gain for Distributed Amplifiers □ Active Layers Include: Pseudomorphic H E M T , Epitaxial and Ion Implanted J W afer Qualification Procedure

pHEMT transistor 30GHz

Abstract: EC2612 ec2612 pHEMT 158467
Contextual Info: EC2612 40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor 0.15µm PHEMT technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low

marking CODE GA sot363

Abstract: atf 36163 Low Noise Amplifier Transistor TT 2246 A004R ATF-36163 MGA-86563 ATF-36163-BLKG marking 34 sot-363 rf GM 2310 A SOT 363 marking code 62 low noise
Contextual Info: ATF-36163 1.5 –18 GHz Surface Mount Pseudomorphic HEMT Data Sheet Description Features The Avago ATF-36163 is a low-noise Pseudomorphic High Electron Mobility Transistor PHEMT , in the SOT-363 (SC‑70) package. When optimally matched for minimum noise figure, it will provide a noise figure of 1 dB at 12

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips J Low Noise Figure: 1.0 dB at 12 GHz Zi High Gain: l Od Ba t 12 GHz J P jdB P °wer: +-2 dBm at 12 GHz J Wide Dynamic Range J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted J Wafer Qualification Procedure

ATF-36077-STR

Abstract: 5965-8726E
Contextual Info: Thal H E W L E T T mLEm P A C K A R D 2 -1 8 GHz Ultra Low N oise Pseudomorphic HEMT Technical Data ATF-36077 Features Description • PHEMT T echnology • Ultra-Low N o ise Figure: Hewlett-Packard’s ATF-36077 is an ultra-low-noise Pseudomorphic High Electron Mobility Transistor

GS 9521

Abstract: CFH120 CFH120-08 CFH120-10 1507 0745 HEMT marking K
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

MAX 8985

Abstract: pseudomorphic HEMT ta 7176 datasheet 8772 P CFH120 CFH120-08 CFH120-10
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

CFH120

Abstract: CFH120-06 CFH120-08 CFH120-10 ts 4302 HEMT marking P
Contextual Info: CFH120 GaAs HEMT Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

5703 infineon

Abstract: pseudomorphic HEMT CFH120-08 CFH120 CFH120-06 CFH120-10 4511 gm
Contextual Info: CFH120 GaAs HEMT Preliminary Datasheet Features • low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers

Contextual Info: 1 _ Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Preliminary Data Sheet v. 11 - 22 October 1999 ATF-38143 _ Features • Low noise figure • Excellent uniformity in product specifications

pseudomorphic HEMT

Abstract: CFA0103 CFA0103L CFA0103-L
Contextual Info: Low Noise GaAs FETs CFA0103 July 2006 - Rev 31-Jul-06 Features High Gain Super Low Noise Pseudomorphic HEMT 70 Mil Hermetic Package Applications Satellite Receivers Point-to-Point Radio Receivers Commercial Communications Defense Electronics General Description

max 1788

Abstract: wy 636 transistor ATF-55143 ATF-55143-BLK ATF-55143-TR1 ATF-55143-TR2 TL 2272 -L4 ATF agilent 5F
Contextual Info: Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Single Supply Enhancement Mode Technology [1] • Very low noise figure The combination of high gain,

Contextual Info: T485BVCO GaAs 38 GHz VCO MMIC with Two-Stage Buffer Amplifier • Monolithic Microwave Integrated Circuit MMIC Voltage Controlled Oscillator with Buffer Amplifier • InGaAs/AIGaAs/GaAs Pseudomorphic HEMT Technology • Frequency range: 34 GHz to 42 GHz

ATF-54143 application notes

Abstract: Curtice PHEMT marking code a SOT c5 87 transistor C013 transistor 4F LNA RHO marking transistor datasheet s parameters noise ATF-54143-BLK ATF-54143-TR1
Contextual Info: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications

l0746

Abstract: Transistor TT 2246 marking 4F sot-343 RD40 ATF54143 R11450 transistor c011 LNA MARKING 4F
Contextual Info: Agilent ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features • High linearity performance • Enhancement Mode Technology [1] • Low noise figure • Excellent uniformity in product specifications

diagram transistor tt 2140

Abstract: Transistor TT 2140 SF128 ba 662 CHIP OBSOLETES LL1005-FS39 transistor Amp 2054 equivalent GETEK FR4 0402CG129C9B200 HEMT marking BA L439
Contextual Info: Agilent ATF-521P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High linearity and P1dB Agilent Technologies’s ATF-521P8 is a single-voltage high linearity, low noise

ph15 transistor

Abstract: pHfet ph15
Contextual Info: PH15 0.15µ µm Ultra Low Noise Process Very Low Noise PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.15µm gate length - GaAlAs/GaInAs/GaAs epitaxial active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs resistors