N745D3 Search Results

Contextual Info: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted

Contextual Info: CELERÊTEK CMM2305 800 to 2700 MHz Broadband Driver Amplifier Prelim inary Product Info rm ation December 1997 1 of 2 Features □ +17.5 dBm Output Power □ Low Current: 70 mA, Typ. □ 800 - 2700 MHz Operation □ Single +3V to +6V Supply □ Input and Output Matched to 50£>, DC

CFB0301-000T

Contextual Info: 9 SSL E R ST E K Product Specifications S eptem b er 1996 CFB0301 High Dynamic Range Low-Noise GaAs FET iof3 Features □ Low-Noise Figure from 0.8 to 2.0 GHz □ High Gain □ High Intercept Point □ Highly Stable □ Easily Matched to 50Q □ 70 mil Package

lambda LMS

Abstract: 5B42 CFK2162-P3 CFK2162-P3-000T
Contextual Info: « i m w i P ro d u c t S p e c ific a tio n s D ecem ber 1997 iof4 CFK2162-P3 r 1.8 to 2.0 GHz +34 dBm Power GaAs FET Features □ High Gain □ +34 dBm Power O utput □ P roprietary Power FET Process □ >45% Linear Power Added Efficiency □ +29 dBm with 30 dBc Third O rder Products