5B42 Search Results

dbl 2003

Abstract: DBL 1011 2901-10DBM 204D 213B IR029
Contextual Info: H/A-COn/ MICROELECTRONICS fc,^E D • 5b421fl3 0001351 Ö50 ■ MACO jyfecm Miniature Open Substrate Mixers r Features 2901 Series 2901-10 Series ■ Double-Balanced 6-18 G H z ■ Miniature Drop-In Carrier ■ High Reliability Description Miniature broadband double balanced

MAAM23000

Abstract: AM23000 0Q007
Contextual Info: íVA-COn/ MIC ROE LE CT RO NI CS 5b421fi3 O D G G T b l bTE D 175 « M A C O A fa Low Noise GaAs MMIC Amplifier 2 -3 GHz MAAM 23000 Features • 1.1 dB Typical Noise Figure1 • 26 dB Typical Gain1 • On-Chip Bias Network • DC Decoupled RF Input and Output

6010.5

Abstract: TT50M50A a2024a
Contextual Info: L3E D 5b422D5 0000031 OMT HAP MICROW AVE PULSED POWER TRANSISTOR PH1214-2.0M PRELIMINARY REV. NC 05/05/92 n/A-con p h M/A-COM PHI, INC. o DESIGN CHARACTERISTICS 100 uS Pulse Operation Broadband 1.2 - 1 . 4 GHz Operation Common Base Configuration Gold Metallization System

Contextual Info: M/Â-COM/ MICROELECTRONICS fc^E D • 5b421fl3 G D D 0 b 5 4 ÜSM « I 1 A C O Matched GaAs SPST Switch DC- 3 GHz with TTL/CMOS Control Input Features • • • • • sw-311 CR-9 Integral Silicon Driver Ultra Low Power Consumption TTL and C M OS Input Compatible

Contextual Info: n/ A- C O M / M I C R O E L E C T R O N I C S 5b421fl3 □□□□Ô32 255 b^E D IMACO jq û të Matched GaAs SPST Switch DC-3 GHz SWS-278 DI-2 • Fast Switching Speed, 6ns Typical a»7 <24.6 ±0.5 ■ Ultra Low DC Power Consumption 1 ■ Surface Mount Package

Adams-Russell

Abstract: 1117G anzac am-110 anzac am anzac AM-281 AM-282 SW-228
Contextual Info: M/A-COM 5b42177 14E D INC/ AN ZA C »IV 0003117 3 T - m - ß Low Noise Amplifier, 1.5 dB Typical Monolithic Amplifier Chip In Miniature Ceramic Package Guaranteed Specifications* F ro m -5 5°C to + 8 5 °C Frequency Range_ 1.1 -1.7 GHz

adams russell

Abstract: adams russell cables AM-290 QDG3114 anzac AM
Contextual Info: M/A-COM INC/ A N Z A C DIV 14E D 5b42177 00D3114 Ö GaAs WIDEBAND MMIC AMPLIFIER 0.7/- 5 25 GHz GAIN: 10.0 dB - . T -1*4'12 •01 ^ ' 3 MODEL'S ;X : AM-290 Monolithic Amplifier Chip 10 dB Minimum Gain On Chip Bias Network Guaranteed Specifications* From -55°C to +85°C Case Temp

MA44951

Abstract: MA44952 MA44953 MA44954 MA44955 MA44956 MA44957 MA44958 MA44959 ty 617 equivalent
Contextual Info: sym M/A-COM SEMICONDiBRLNGTON 11 D 5b422m DDQlMDfl =1 « M I C T-07-11 MA44950 Series Silicon Multichip Pulsed Multiplier Varactors Features • PEAK OUTPUT POWER TO 150 WATTS ■ SIMPLE CIRCUITS ■ PARTS CAN BE SCREENED TO MILITARY SPECIFICATIONS OR JANTX, TXV ÉQUIVALENT

dv2810

Abstract: dv2810s 176/transistor WW 179 593 PH 275 v Stackpole 57
Contextual Info: 5642205 M /A -C O M P H I I N 0 ^ 1 F | 5b42205 0000440 DV2810S n W T ~ 0 1 ' — 1 n-channel enhancement-mode RF Power FETs designed for. HF/VHF Amplifiers Class A, B, or C High Dynamic Range Amp Benefits 175MHz 20"?ow 10dB Absolute Maximum Ratings 25°o

5609A

Contextual Info: M/A-COM/MELEC D I V -,L O U E L L SEE D 5b421û3 ODOOSDf l 2 e]3 IMACO Bulletin No. 5609A Preliminary - p MADA2010 4 Bit GaAs Digital Attenuator DC - 2 GHZ n 4 - i 3 'O v c 2 v 5 5 v c 3 v C3 • Attenuation 2dB Steps to 30 dB ■ Temperature Stability ±0.1 dB from -55° to

5608A

Abstract: DV357
Contextual Info: M/A-COM/HELEC D I V -, LOWELL S2E D 5b421fl3 □ □ □ 0 5 0 b 410 AfoCC IP1AC0 Bulletin No. 5608A Preliminary MADA2000 4 Bit GaAs Digital Attenuator DC - 2 GHZ VCÎ VC2 VC3 VC3 • Attenuation 1 dB Steps to 15 dB ■ Tem perature Stability ±0.1 dB from -55° to

Contextual Info: M/A-COM/ MIC RO ELECT RO NICS b^E D • 5b421fl3 GGDGb2D 771 * M A C O Afi¡M OM T/R Diversity Switch DC-2.5 GHz ¥^■93 SW-923 SSOP-20 Features • +36 dBm Typ. 1 dB Compression Point, 8V Supply • Two Tone IP3 @ 1 Watt - each tone 44 dBm • Low Insertion Loss: 0.7 dB Typical

di 18

Contextual Info: M/A-COM CONTROL COMPONENT S1E 5b42215 Q O O l O n D 317 « M A C H Double-Balanced Open Substrate Microstrip Mixers r -7 W ? -û I Features • Low Ground Inductance ■ Multi-octave RF/LO ■ dc to 2 GHz IF Response Description These drop-in mixers are designed for subsystem applications

MICROWAVE ASSOCIATES

Abstract: MA-4D0041
Contextual Info: 5642214 M /A-COM SEMICONDUCTOR T3 DE | 5b425m □□□□bbD 3 |" T 'O MICROWAVE ASSOCIATES A M/A-COM COMPANY MA-4D0041 SD-41 Series Power Schottky Rectifier For Switching Applications Description The MA-4D0041 (SD-41) has been added to Microwave Associates’ line of Power Schottky

MA40092

Contextual Info: M/ A- CO N S E M I C O N D n B R L N G T O N 11 ]> • 5b42S14 GOGIETE S ■ M I C Stripline Packaged Silicon Schottky Mixer Diodes Features ■ LARGE CHOICE OF AVAILABLE PACKAGES ■ UNIFORM RF CHARACTERISTICS ■ SCREENING TO JANTXV LEVEL AVAILABLE ■ LOW, MEDIUM AND HIGH BARRIER

1N4387

Abstract: 1N4386 1N5154 1N5150 1N5151 1N5150-5157 1N5155 1N4388 1N5149 1N5150A
Contextual Info: M/A-con s e u i c o n d t Br lngto n h d A$ m 5b42214 QGQlB'iL. h • MIC T-07-11 1N4386-88 and 1N5150-5157 Series High Power Multiplier Varactors Features ■ HIGH POWER ■ HERMETIC SEALS ■ LOW THERMAL RESISTANCE ■ HIGH EFFICIENCY Applications These series of high power silicon multiplier diodes are

SW329

Contextual Info: M/A-COM/ MICROELECTRONICS 5b421fi3 D D O O b l H tIE D 476 • MACO jtfA m GaAs SPDT Switch with Integral Driven ^July-93 SW-329 0.7-2.0 GHz SO-8 Features • + 5 Volt T T L Com patible Driver1 • Matched 1 /1 0 7 ' n .2284-.2440 Oso'iom. 5-8°-6-2°

f 10403

Abstract: SA203E SW SPDT SW-228-PIN SW-226 SW-227 SW-228 5V110
Contextual Info: n/A-COn/ MICROELECTRONICS b'ìE D • 5b421ô3 DDGGfiST 4TÛ ■ M A C O GaAs SPDT Switch DC-4 GHz SW-226Æ27/228 ■ Miniature Ceramic Package ■ Terminated SW-226 , High Isolation (SW-227), Low Loss (SW-228) ■ Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption

SW-212

Abstract: SW-214
Contextual Info: M/A-CON/ MICROELECTRONICS b^E D • 5b421B3 0DD0633 m ■ MACO A fo rÇ M GaAs SPST Switch DC-3 GHZ SW-212/214 ■ Fast Switching Speed, 6ns Typical ■ Ultra Low DC Power Consumption ■ Low Loss SW-212 , Terminated (SW-214) - PUNCH MARK Guaranteed Specifications*

AT-339

Abstract: AT339PIN MS-012-AB SOIC14 AT-339TR 25-ND
Contextual Info: M/A-COM/ MI CRO ELE CTRO NI CS b'ïE » • 5b421ö3 00D0t.3S 4 C13 « M A C O Voltage Variable Absorptive Attenuator, 40 dB DC-2 GHz AT-339 SO-14 Features • 4 0 dB V oltage Variable Attenuation • Low Intermodulation Products • V ery Low P ow er Consumption: 5 0 |iW

Contextual Info: ANALOG DEVICES Process Current Input Module MODEL 5B42 FEATURES A ccepts 4 -to -2 0 m A Process C u rren t In p u t Signal Provides Iso la tio n and R egu lated 20 V DC Loop P o w e r fo r N o n is o la te d 2 -W ire T ra n s m itte rs +1 V to +5 V or +2 V to +10 V O u tp u t

Contextual Info: Isolated, Process Current Input 5B42 FEATURES Isolated Current Input. Interfaces with two-wire transmitters, providing an isolated, regulated 20 V supply voltage. Measure process-current input signal of 4-20 mA . Generates an output of +1 to +5V or +2 to 10V.

AT-102

Contextual Info: M/A-COM/ MICROELECTRONICS L'ÎE J> • 5b421A3 DGQOêêR 13S » M A C O A fo j= M 5-Bit Digital Attenuator 20-1000 MHz AT-102 DI-3 Attenuation 1 dB Steps to 31 dB CMOS Control Interface Internal Latch on Control Input Hermetic Case 1.37 ±0.5» ♦V C N 1« 1 2 4 •

Contextual Info: M/A-COM AD V SEMICONDUCTOR 57É D • 5b421S3 0DD02t.fi 1 MA4GM202MD-2009 GaAs MMIC SPDT RF Switch Features ■ ALL RF PORTS MATCHED ■ LOW DC POWER CONSUMPTION ■ INTEGRAL CMOS DRIVER IDC < 5 mA ■ TTL COMPATIBLE DRIVE ■ BROADBAND DC - 4 GHz SWITCH SCHEMATIC