PH15 Search Results

Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 P Series Revised 1-04 Knobs, Moulded Phenolic PH SERIES SPUN ALUMINUM INLAY C B A NO. 6-32 SET SCREW PH15181/4 F D E Model PH15181/4 PK SERIES A Straight Knurl Less Indicator Line

Knobs and Accessories

Abstract: KR1 9-1437627-6 *106B1 pkn-60b
Contextual Info: P Series Knobs, Molded Phenolic PH SERIES SPUN ALUMINUM INLAY C B A NO. 6-32 SET SCREW F D PH15181/4 E Tyco Electronics Alcoswitch 1437624-2 PK SERIES PH15181/4 Straight Knurl Less Indicator Line A B C D E F .996 25.3 .972(24.7) .799(20.3) .472(12.0) .669(17.0)

Contextual Info: PH1516-60 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)10 Absolute Max. Power Diss. (W)116 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)4.0mx @V(CBO) (V) (Test Condition)26

Contextual Info: DIODE 150A Avg 300~800 Volts •回路図 CIRCUIT 1 PH1503 PH1504 PH1508 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage

Contextual Info: Catalog 1307612 AlcOSwitch P Series Revised 7-01 Knobs, Molded Phenolic PH SERIES SPUN ALUMINUM INLAY NO. 6-32 SET SCREW PH15181/4 Straight Knurl Less Indicator Line A B c D E F .996 25.3 1.19(30.2) 1.40(35.6) .972(24.7) 1.16(29.5) 1.34(34.0) .799(20.3) .988(25.1)

PH1516-2

Abstract: LT 1146 d 1047 transistor Cbc 183 cl PH1516
Contextual Info: /M Îh C m a n A M P com pany Wireless Bipolar Power Transistor, 2W 1.45 -1.60 GHz PH1516-2 Features • • • • • • D e s ig n e d f o r C e llu la r B ase S ta tio n A p p lic a tio n s C lass AB: -33 d B c T yp 3 rd IM I a t 2 W atts PEP C lass A; +4-4 d B m I'yp 3 rd O r d e r I n te r c e p t P o in t

PH1516-60

Abstract: 22J50 POUT60
Contextual Info: PH1516-60 Wireless Bipolar Power Transistor 60W, 1450-1550 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing Features • • • • • • Designed for linear amplifier applications Class AB: -30 dBc typ. 3rd IMlD at 60 W PEP Class A: + 53 dBm typ. 3rd order intercept point

PH1503

Abstract: PH1504 PH1508
Contextual Info: DIODE MODULE 150A/300 to 800V PH1503,PH1504,PH1508 OUTLINE DRAWING FEATURES * Isolated Base * High Surge Capability * UL Recognized, File No. E187184 TYPICAL APPLICATIONS * Rectified For General Use Maximum Ratings Parameter Repetitive Peak Reverse Voltage

ph15

Contextual Info: MwT- PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2004 Chip Dimensions: 775 x 241 microns Chip Thickness: 100 microns Features: +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate

SSG 111

Abstract: MWT-PH15QACSB
Contextual Info: MwT-PH15QACSB 12 GHz QFN Packaged Fet Preliminary Data Sheet June 2006 Features: • • • Designed for single voltage operations Excellent performance up to 12GHz in Frequency Range Typical RF Performance @ 10GHz: o 11 dB Gain o +25 dBm P1dB o Single Positive Bias

w-band

Abstract: CHU3377 PH15 76-77GHz
Contextual Info: CHU3377 RoHS COMPLIANT W-band Multifunction: Multiplier / MPA GaAs Monolithic Microwave IC Description 76. 5GHz IN x3 OUT x2 Tx / PH15 -V +V W-band multifunction block-diagram 20 18 16 14 P_out dBm The CHU3377 is a W-band monolithic multifunction, which integrates an input buffer, a

Nemic-Lambda ph150s 280-5

Abstract: RC9002 1000uf 400Vdc capacitor 1000uf 400vdc CSA234 PH150S PH150S280 C095-01-02B
Contextual Info: PH150S280 Specifications NEMIC-LAMBDA * PH150S PH150S ITEMS 280-3.3 280-5 1 Nominal Output Voltage V 3.3 5 2 Maximum Output Current A 30 30 3 Nominal Output Power W 99 150 72 82 4 Efficiency Typ (∗1) % 5 Input Voltage Range - 200 ~ 400VDC 280VDC input A

ph15 transistor

Abstract: pHfet ph15
Contextual Info: PH15 0.15µ µm Ultra Low Noise Process Very Low Noise PHFET technology Description - "Pseudomorphic" PM-HEMT technology - 0.15µm gate length - GaAlAs/GaInAs/GaAs epitaxial active layer - 3" wafer - Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs resistors

CHA2066-99S

Contextual Info: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)

densei-lambda PH150S

Abstract: PH150S
Contextual Info: DENSEI-LAMBDA PH150S110 SPECIFICATION C104-01-01B MODEL PH150S ITEMS 110-5 PH150S PH150S PH150S PH150S 110-12 110-15 110-24 110-28 1 Nominal Output Voltage V 5 12 15 24 28 2 Maximum Output Current A 30 12.5 10 6.3 5.4 3 Nominal Output Power W 150 150 150 151.2

C10601

Abstract: PH150F C106-01-01B
Contextual Info: DENSEI-LAMBDA PH150F110 SPECIFICATION 27 Isolation Resistance 28 Vibration 29 Shock 30 Weight Typ. 31 Size (WxHxD) (*1) (*6) (*1) (*1) (*10) (*9) (*2) (*3) (*4) (*5) (*8) (*8) (*8) (*8) (*8) (*6) (*7) V A W % A % mV mV mV A V g mm PH150F PH150F 110-2 110-3

Contextual Info: MwT- PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2004 Chip Dimensions: 775 x 241 microns Chip Thickness: 100 microns Features: +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate

TI9B

Abstract: pj12 diode to8b SH7054F pj14 diode TO6C TO8c ROM256KB SH7052f TO8A
Contextual Info: ,
Port/control signals Port/address signals ROM flash *256 kB/384kB Clock pulse generator CPU DMAC (4 channels) Multiplier Interrupt controller SCI (5 channels) ATU-II HCAN (1 channel) AUD PH15/D15 PH14/D14 PH13/D13 PH12/D12 PH11/D11 PH10/D10 PH9/D9

MWT-PH15

Abstract: SOLAR TRANSISTOR "Microwave technology Inc"
Contextual Info: MwT-PH15 28 GHz Medium Power AlGaAs/InGaAs PHEMT June 2006 Features: • • • • • • • +28.5 dBm typical Output Power at 12 GHz 12 dB typical Small Signal Gain at 12 GHz 60% typical PAE at 12 GHz 0.3 x 630 Micron Refractory Metal/Gold Gate Sorted into 10 mA Idss Bin Ranges

PH1503

Abstract: PH1504 PH1508 diode 150A
Contextual Info: DIODE 150A Avg 300~800 Volts •回路図 CIRCUIT 1 PH1503 PH1504 PH1508 ■外形寸法図 OUTLINE DRAWING （単位 Dimension：mm） 2 ■最大定格 Maximum Ratings 項 目 Parameter くり返しピーク逆電圧 Repetitive Peak Reverse Voltage

Contextual Info: PH1516-2 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)65â V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)13 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)25

LC1 F150

Abstract: d 1711
Contextual Info: m a n A M P com pany Wireless Bipolar Power Transistor, 10W 1.45-1.60 GHz PH1516-10 Features • • • • • • Designed for Cellular Base Station Applications Class AB: -33 dBc Typ 3rd IMD at 10 Watts PEP Class A: +49 dBm Typ 3rd Order Intercept Point

PH1516-10

Contextual Info: PH1516-10 Wireless Bipolar Power Transistor 10W, 1.45-1.60 GHz M/A-COM Products Released - Rev. 07.07 Outline Drawing1 Features • • • • • • Designed for cellular base station applications Class AB: -33 dBc typ. 3rd IMD at 10 W PEP Class A: +49 dBm typ. 3rd order intercept point

W-band

Abstract: CHU3377 PH15 95 GHz Frequency Multipliers 015nH
Contextual Info: CHU3377 RoHS COMPLIANT W-band Multifunction: Multiplier / MPA GaAs Monolithic Microwave IC Description 76. 5GHz IN x3 OUT x2 Tx / PH15 -V +V W-band multifunction block-diagram 20 18 16 14 P_out dBm The CHU3377 is a W-band monolithic multifunction, which integrates an input buffer, a