PPH15 Search Results

PPH15

Abstract: pseudomorphic HEMT
Contextual Info: PPH15 0.15µ µm Power PH-HEMT Process Description § § § § § § "Pseudomorphic" PM-HEMT technology 0.15µm gate length Double heterojunction GaAlAs/GaInAs/GaAlAs/GaAs epitaxial active layer 4" wafer Spiral inductors, MIM capacitors, TaN resistors, TiWSi resistors, GaAs resistors

Contextual Info: PPH15X_10 TECHNOLOGY The new UMS 150nm GaAs power pHEMT process UMS is now pleased to extend its foundry offer with the introduction of a new 150nm GaAs Power pHEMT process. This process is optimised for wideband high power amplification up to 40GHz with a typical Ft of 65GHz

PPH15

Abstract: HP07 PH15 PH25 PPH25 ums HP07
Contextual Info: Application Note Chip Handling and Mounting Recommendations This document contains various informations and recommendations related to UMS GaAs products storage, handling, mounting and bonding. Chip Form Products GaAs MMIC passivation GaAs products manufactured by UMS all use a silicon nitride passivation layer, meaning that

77GHz Radar

Abstract: PPH25x ulm 2003 ph15 transistor pph15 transistor HB20M 24GHz Radar military switch PPH25 thales SMD
Contextual Info: UMS MMIC Solutions up to 100GHz The European Source for Products, Solutions and Foundry Services ABOUT US United Monolithic Semiconductors* UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Ulm, Germany and Orsay,

Contextual Info: GaAs & GaN Build your own solution with UMS FOUNDRY SERVICES UMS has developed a proven family of III-V based processes for high performance low noise and high power MMICs. These processes are extensively used by foundry customers and by UMS to offer MMIC solutions for the Defence,

CHA2066-99S

Contextual Info: UMS UNIQUE SPACE SOLUTION A complete selection of catalogue Class S products For many years, UMS has served the needs of the international space community by offering an extensive selection of space evaluated processes: • Low Noise PHEMT PH25, PH15 • Power MESFET (HP07)

BS1474

Abstract: 91AB 523AB 520AB 543AB PPD50PH PPD50 PP50HC ABL Heatsinks 120AB
Contextual Info: INDEX INDEX PRINT 1 Pages 2 INTRODUCTION 3 GENERAL INFORMATION 4 GUIDE TO FORCED AIR COOLING GRAPH 5 CUSTOM DESIGN 6 - 7 SPRING CLIPS 8 - 1 6 PRESSED ALUMINIUM - LOUVRE SINKS 1 7 - 2 4 BOARD MOUNTING SERIES PP 25-39 100 SERIES 40-41 200 SERIES 42-44 300 SERIES

PPH15

Abstract: 40GHz power amplifier United Monolithic Semiconductors
Contextual Info: PRESS RELEASE New Products Announcement Date : Monday, July 16, 2001 Author : Marketing group United Monolithic Semiconductors releases a new high gain 4-stage, 20-40GHz medium power amplifier To Business editores/High tech Writers th ORSAY , July 16 , 2001

PPH25X

Contextual Info: Contents Products . 3 Foundry open processes. 12 GaN current packaging solutions and demo boards. 14

PPD50P

Abstract: PPD50PH
Contextual Info: HEAT S IN K S BOARD MOUNTING SERIES PPD T0220, T03R etc Length mm L Part Number ( D E V IC E C LIPS A VA ILA BLE W IT H T H IS H EA TSINK - C LIP 0 3 ) Holes Thermal Rating °C/W 38 PPD38P NO 7.00 38 PPD38PH YES 7.00 50 PPD50P NO 5.5 50 PPD50PH YES 5.5 63

ulm 2003

Abstract: 77GHz Radar sas smd transistor PPH15 PPH25X 5gHz SMD RF Mixer SMD Transistor SAs diode catalogue pph15 transistor ulm 2002
Contextual Info: ABOUT US United Monolithic Semiconductors UMS was created in 1996 to provide a European source of III-V technologies and products. The Company has industrial facilities in Germany, USA and France (Headquarters). Your Leading Source for Products, Support & Services