CF001 Search Results

CF001

Abstract: CF001-01 CF001-02 CF001-03 S-11 celeritek ghz GaAs FET HEMT Chips
Contextual Info: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: U sable to 44 G H z J P id B P ° wer: to +19 dB m □ Active Layers Include: Pseudom orphic H EM T, E p itaxial and Ion Im planted W afer Q ualification Procedure

CF001-03

Abstract: CF001 GaAs FET HEMT Chips CF001-01 CF001-02 celeritek ghz CFB001
Contextual Info: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 GHz □ High Gain: Usable to 44 GHz □ P idB P°wer: U p t0 +19 dBm □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure

Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

CF001-01

Abstract: CFB0101 CFB0101B CFA0101A CF001 GaAs MESFET
Contextual Info: GaAs MESFET Transistor CF001-01 March 2008 - Rev 15-Mar-08 Features High Gain: Usable to 44 GHz P1dB Power: 21 dBm Wfer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-01 GaAs-based transistor is a 300 um gate width, sub-half-micron gate length GaAs device with Silicon

CF001

Contextual Info: Crystal band stop filter QBS78.6-2000/01 Application Limiting values 2 pol filter Unit Value MHz dB 78.6 < 3.0 dB > 20 MHz dB dB 79.1.108.6 < 2.0 <2 Ohm/pF Ohm/pF 50 | 0 50 | 0 °C °C +0. +65 -45. +85 according to CF001 i.f.- filter use in mobile and

pseudomorphic

Abstract: HEMT CF001 MESFET
Contextual Info: GaAs Pseudomorphic HEMT and MESFET Chips August 2006 - Rev 03-Aug-06 CF001 Series Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com Page 1 of 4 Characteristic Data and Specifications are subject to change without notice. 2006 Mimix Broadband, Inc.

Contextual Info: CF001 Series g„a @p™ˆ›‡•“•˜–‹Œ†@hemt@„”‡@mesfet@c‹Œ–™ mŒ“ŒŸ@b˜•„‡…„”‡L@i”†N@QPWYU@r•†‘’ˆ @r‡NL@h•›™š•”L@tˆŸ„™@WWPYY †•“

Contextual Info: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips J S u p e r Low Noise: 0.8 dB at 12 G H z J High G ain : Usable to 44 G H z J PjdB P°wer: t0 dBm J Active L a y e rs Include: P seu d o m o rp h ic H E M T, E pitaxial an d Ion Im p lanted J W afer Q ualification P ro ced u re

CF001-03

Abstract: CFA0103A low noise x band hemt transistor cfb0103 CFB0103-B CFB0103B CFS0103-SB CFA0103-A Mimix Broadband CF001
Contextual Info: GaAs Pseudomorphic HEMT Transistor April 2008 - Rev 03-Apr-08 CF001-03 Features High Gain: Usable to 44 GHz Low Noise Figure 0.8 dB @ 12 GHz Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF001-03 GaAs-based transistor is a 300 um gate

Contextual Info: CF001 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Super Low Noise: 0.8 dB at 12 G H z □ High Gain: Usable to 44 GHz □ ^ ld B P °wer: Up t0 +19 dBm J Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted □ Wafer Qualification Procedure

Contextual Info: 06 October 2006 Specification for monolithic crystal filter: MQF 90.0-1500 /09 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 01 November 2010 Specification for monolithic crystal filter: MQF 90.0–2000/07 1. General 1.1. Package: 2 x GH 9.4 each filter consists of a pair of two matched duals temperature (°C) 260°C max. 260 217 time (s) max 300s 30,150s 10,30s Reflow soldering: three times max.

Contextual Info: 24 March 1999 Specification for monolithic crystal filter: MQF 21.4-3000/29 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 01 April 1999 Specification for monolithic crystal filter MQF 70.0-1500/01 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. 1.6. Type name: Number of poles: Operable temperature range: Operating temperature range: Storage temperature range: 2. Electric values

Contextual Info: 08 Novmeber 2007 Specification for monolithic crystal filter: MQF 45.0–1600/08 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 12 June 2013 Specification for monolithic crystal filter MQF 70. 0-5000/13 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 70.0-5000/13 6 -40°C to +85°C -45°C to +85°C

Contextual Info: 24 June 2011 Specification for monolithic crystal filter 1. General 1.1. Package: MQF 70. 0-3200/06 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 17 Noveber 2009 Specification for monolithic crystal filter: MQF 21.4-3000/03 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 21.4-3000/03 6 -40°C to +85°C -55°C to +85°C

Contextual Info: 05 October 1999 Specification for monolithic crystal filter MQF 70.0-1500/07 1. General 1.1. Package: 2 x GH 9 each filter consists of a pair of two matched duals 1.2. 1.3. 1.4 1.5 Type name: Number of poles: Operating temperature range: Storage temperature range:

Contextual Info: 03 March 2011 Specification for monolithic crystal filter: MQF 21.4-3000/01 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 18 November 2002 Specification for monolithic crystal filter: MQF 21.4-2400/11 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 21.4-2400/11 12 -20°C to +70°C -35°C to +85°C

Contextual Info: 12 July 2011 Specification for monolithic crystal filter: MQF 45.0-1500/67 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: 2. Electric values 2.1. Nominal centre frequency fo:

Contextual Info: 28 June 2011 Specification for monolithic crystal filter: MQF 40.5-1500/03 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 40.5-1500/03 6 -40°C to +85°C -55°C to +85°C

Contextual Info: 06 July 2011 Specification for monolithic crystal filter: MQF 45.752-0600/02 1. General 1.1. Package: 1.2. 1.3. 1.4. 1.5. Type name: Number of poles: Operating temperature range: Storage temperature range: MQF 45.752-0600/02 4 -20°C to +70°C -55°C to +85°C