10N03
Abstract: 06N03 VU050-12N03 04n03 14n03 VU050-16N03 VU050-08N03 IT5 rectifier 16N03 12n03
Contextual Info: MbE D • 4 h ñ b 25 b 0 0 G 1 25 5 3 H I X Y I X Y S CORP 'T-Z.SiQ^ g m -< n TYYS k_J Data Sheet No. 911004A - November 1991 Three-Phase Diode Rectifier Bridge VU050 FEATURES:_ • Isolated Direct Copper Bond Base Plate
|
OCR Scan
|
e72873m11004avu050vu050-04n03+13vu050-06n03vu050-08n03vu050-10n03vu050-12n03vu050-14n03vu050-16n0310n0306n0304n0314n03it5 rectifier16n0312n03
|
PDF
|
150-12SE
Abstract: VIE150-12S FIB5 IXYS IGBT 3kv igbt inverter circuit for induction heating Induction Heating Resonant Inverter
Contextual Info: Mfc.fit.22b 0001027 3bS IX Y ISOSMART IG B T M o d u le s \ 1 nixYS 19 93IXYS Corporation IXYS Corporation iibflb22b 0DDlfl2B ST1 • IXY VIE 150-12SE ISOSMART™ Module Description of the ISOSMART™ Module The VIE150-12SE module, shown diagrammatically in Figure 1, is a 1200V, 150A, IGBT
|
OCR Scan
|
93ixysiibflb22b150-12sevie150-12se+7pob1180d68619vie150-12sfib5ixys igbt 3kvigbt inverter circuit for induction heatinginduction heating resonant inverter
|
PDF
|
1XYS
Abstract: DRIVE STEPPER MOTOR WITH CONTROLER d6340 120hz ac motor controller
Contextual Info: □ IXYS P R E L IM IN A R Y T E C H N IC A L IN F O R M A T IO N * D a ta S heet No. 9 1 5 1 0 0 C O ctober 1991 High Performance Dual PWM Microstepping Controler IXMS150 FE A TU R E S Two com plete, synchronous PWMs. Wide frequency range: 20kHz to 400kHz.
|
OCR Scan
|
915100cixms15020khz400khz+5d-68401xysdrive stepper motor with controlerd6340120hz ac motor controller
|
PDF
|
|
Contextual Info: □IXYS PRELIM INARY INFORMATION Data Sheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features INDEX Pulse Decoding and Sampling into a Dedicated Latch D irect 2 chan nel Q uadratu re Inputs with Schmitt Trigger Circuitry
|
OCR Scan
|
15502aixse502ixse50304ct/1+4ixses03pob1180d-6840662422602abd
|
PDF
|
VB020-12N02
Abstract: VB020-06N02 VB020 VB020-16N02 VB020-08N02 VB020-16A02 06N02 VB020-14A02 VB020-04N02
Contextual Info: 4bE D • 4bflb22b I X Y S □IXYS D0D1271 1 « I X Y CORP November 1991 Data Sheet No. 911012A Single-Phase Diode Rectifier Bridge VB020 FEATURES:_ • • • Avalanche Rated Parts Available Isolated Direct Copper Bond Base Plate
|
OCR Scan
|
4bflb22bd0d127111012avb020+10vb020-04n02vb020-06n02vb020-08n02vb020-10n02vb020-12n02vb020-14n02vb020-16n02vb020-16a0206n02vb020-14a02
|
PDF
|
IXGH20N60U1
Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
Contextual Info: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package
|
OCR Scan
|
1750a30khzt-39-15ixgh10n60u1+11ixgh10n60au1ixgh20n60u1ixgh17n100au1sot227b packageixsh20n60u1gh20n60au11xysultrafast 5-40 khze1s4ti231igbt 20a 600v abb
|
PDF
|
IXSE502PC
Abstract: Hearing Aid ARM processor based Circuit Diagram IXSE502 DOWN COUNTER using 8051 flow chart for automatic control of three phase motor using 8051 ic circuit diagram of digital hearing aid incremental shaft encoder 8086 microcomputer quadrature shaft decoder D-6840
Contextual Info: 4bE D • MböbEEb □□Gill? E BIIXY I X Y S CORP T ‘5 * ^ 3 ' O S □IXYS PRELIMINARY INFORMATION D atasheet No. 915502A October 1991 SHAFT ENCODER PERIPHERAL INTERFACE IXSE502 / IXSE503 Features Direct 2 channel Quadrature Inputs with Schmitt Trigger Circuitry
|
OCR Scan
|
15502aixse502ixse503ixse502pc+13ixse502piixse503pcixse503pi24ct/1pob1180hearing aid arm processor based circuit diagramdown counter using 8051flow chart for automatic control of three phase motor using 8051 iccircuit diagram of digital hearing aidincremental shaft encoder8086 microcomputerquadrature shaft decoderd-6840
|
PDF
|
1XFH12n100
Abstract: transistor 13n80
Contextual Info: MbE D • 4bflb22b G O D D E S S 4 HIXY I X Y S CORP T - l V l S □IXYS Data Sheet No. 91532A October 1991 HiPerFET POWER MOSFETs N-Channel, High dv/dt, Low trr, HDMOS™ Fam ily C haracteristics Features * Low RDS{on HDMOS™ Process • Rugged Polysilicon Gate Ceil Structure
|
OCR Scan
|
4bflb22b1532a200nsixfh12n100+5ixfh10n100ixfm12n100ixfm10n1001xfh12n100transistor 13n80
|
PDF
|
40n60 transistor
Abstract: 30N60 40n60 30N60A 40n60 igbt 17N10 wiom DC transistor JE 1090 20N60A igbt equivalent to 40n60
Contextual Info: MbE D • Mb S b S E b OO O O S T M T «IXY I X V S CORP T □IX Y S I V I S Data Book NO.91560A October 1991 "S" Series MOSIGBTs High Short Circuit SOA Insulated Gate Bipolar Transistor Features • • • Guaranteed Short Circuit Capability SCSOA Optimized for 60Hz to 30kHz Switching
|
OCR Scan
|
1560a30khzixsh20n60ixsm20n60+11tj-12540n60 transistor30n6040n6030n60a40n60 igbt17n10wiom dctransistor je 109020n60aigbt equivalent to 40n60
|
PDF
|