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power wizard 1.0 wiring diagram

Abstract: FT2232H rs422 pinout RS-4221 EIA-422 FT2232 FT232BM FT232R free circuit diagram of USB modem d-type connector mechanical
Contextual Info: Future Technology Devices International Ltd USB-COM422-PLUS2 Datasheet Document Reference No.: FT_000135 Version 1.0 Issue Date: 2009-08-27 Future Technology Devices International Ltd FTDI Unit 1, 2 Seaward Place, Centurion Business Park, Glasgow, G41 1HH, United Kingdom

IXFB100N50

Contextual Info: Advance Technical Information IXFB100N50Q3 HiperFETTM Power MOSFET Q3-Class VDSS ID25 RDS on trr = = ≤ ≤ 500V 100A Ω 49mΩ 250ns N-Channel Enhancement Mode Fast Intrinsic Rectifier PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

CLA80E1200HF

Contextual Info: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip

IXFB120N50P2

Contextual Info: IXFB120N50P2 Polar2TM HiPerFETTM Power MOSFET VDSS ID25 RDS on = 500V = 120A ≤ 43mΩ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS264TM Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: LinearTM Power MOSFET w/ Extended FBSOA IXTB30N100L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 30A Ω 450mΩ G PLUS264TM S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

CLA80E1200HF

Contextual Info: CLA80E1200HF High Efficiency Thyristor VRRM = 1200 V I TAV = 80 A VT = 1.38 V Single Thyristor Part number CLA80E1200HF Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip

Contextual Info: HiPerFETTM Power MOSFETs Q-Class VDSS ID25 RDS on trr IXFB50N80Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr = = ≤ ≤ 800V 50A Ω 160mΩ 300ns PLUS264 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS

IXFB40N110P

Abstract: IXFB 40N110P 40n110p F40N
Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFB40N110P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1100V 40A Ω 260mΩ 300ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ

IXFV110N25T

Abstract: IXFV110N25TS PLUS220SMD
Contextual Info: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250

200N10T

Abstract: N mosfet 100v 200A IXTV200N10TS PLUS220SMD
Contextual Info: IXTV200N10T IXTV200N10TS TrenchMVTM Power MOSFET VDSS ID25 = 100V = 200A Ω ≤ 5.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 175°C 100 V VDGR T J = 25°C to 175°C, RGS = 1MΩ

25N250

Abstract: IXBX25N250
Contextual Info: Preliminary Technical Information IXBX25N250 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 2500V IC90 = 25A VCE sat ≤ 3.3V PLUS247TM (IXBX) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

IXFB80N50Q2

Abstract: 80N50Q2
Contextual Info: HiPerFETTM Power MOSFETs IXFB80N50Q2 VDSS = ID25 = RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: CS60-14io1 Thyristor VRRM = 1400 V I TAV = 60 A VT = 1.14 V Single Thyristor Part number CS60-14io1 Backside: anode 2 1 3 Features / Advantages: Applications: Package: PLUS247 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability

Contextual Info: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   100V 300A  5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M

Contextual Info: IXSK 40N60BD1 IXSX 40N60BD1 IGBT with Diode PLUS247 TM package Short Circuit SOA Capability VCES IC25 VCE sat tfi(typ) = 600 = 75 = 2.2 = 120 V A V ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW

Contextual Info: GenX3TM 600V IGBT IXGB200N60B3 VCES = IC110 = VCE sat ≤ tfi(typ) = Medium speed low Vsat PT IGBTs 5-40 kHz switching PLUS264TM (IXGB) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ 600 600 V V VGES

Contextual Info: HiPerFETTM Power MOSFET Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFB70N60Q2 N-Channel Enhancement Mode Avalanche Rated, Low QG, Low Intrinsic RG High dv/dt, Low trr 600V 70A Ω 88mΩ 250ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: HiPerFETTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFB80N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A Ω 60mΩ 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C

Contextual Info: VDSS ID25 IXFB52N90P PolarTM Power MOSFET HiPerFETTM RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 900V 52A Ω 160mΩ 300ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250

Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings

Contextual Info: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFB210N20P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 200V 210A Ω 10.5mΩ 200ns PLUS264TM Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ

IXTX24N100

Abstract: PLUS247 24N100
Contextual Info: Power MOSFET IXTX24N100 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = = ≤ 1000V 24A Ω 400mΩ PLUS247 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSS Continuous ±20 V VGSM Transient