IXFV110N25T Search Results

IXFV110N25T

Abstract: IXFV110N25TS PLUS220SMD
Contextual Info: Preliminary Technical Information IXFV110N25T IXFV110N25TS Trench Gate Power HiperFET VDSS ID25 = 250V = 110A Ω ≤ 24mΩ RDS on N-Channel Enhancement Mode Avalanche Rated PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250

Contextual Info: TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 IXFV110N25T IXFV110N25TS RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250

Contextual Info: IXFV110N25T IXFV110N25TS TrenchTM HiPerFETTM Power MOSFETs VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 250V = 110A ≤ 24mΩ Ω PLUS220 (IXFV) Symbol Test Conditions VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ