IXFH12N100P Search Results

IXFH12N100P Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH12N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247	Original	PDF		4

IXFH12N100P Price and Stock

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IXYS Corporation IXFH12N100P MOSFET N-CH 1000V 12A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH12N100P	Tube	418		1	1 $10.02 10 $10.02 100 $5.76 1000 $4.78 10000 $4.78	Buy Now
Mouser Electronics	IXFH12N100P		72			1 $9.82 10 $6.11 100 $6.11 1000 $4.78 10000 $4.78	Buy Now
Verical	IXFH12N100P		276		8	1 - 10 $8.92 100 $8.54 1000 $8.54 10000 $8.54	Buy Now
Future Electronics	IXFH12N100P	Tube			300	1 - 10 - 100 $4.83 1000 $4.72 10000 $4.64	Buy Now
TTI	IXFH12N100P	Tube	300		30	1 - 10 - 100 $6.05 1000 $4.73 10000 $4.73	Buy Now

TME	IXFH12N100P		276		1	1 $9.63 10 $7.34 100 $6.24 1000 $6.18 10000 $6.18	Buy Now
Vyrian	IXFH12N100P		405			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFH12N100P Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH12N100P		20		20	1 - 10 - 100 $5.75 1000 $5.75 10000 $5.75	Buy Now
Arrow Electronics	IXFH12N100P		20	38 Weeks	30	1 - 10 - 100 $5.73 1000 $4.74 10000 $4.74	Buy Now
IXYS Corporation IXFH12N100P (POLAR HIPERFET) Mosfet, N-Ch, 1Kv, 12A, To-247 Rohs Compliant: Yes \|Ixys Semiconductor IXFH12N100P
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFH12N100P (POLAR HIPERFET)	Bulk	572		1	1 $9.82 10 $6.41 100 $5.80 1000 $5.28 10000 $5.28	Buy Now

IXFH12N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 12N100P 1-08-A	PDF
IXFH12N100P Abstract: 12n100p f12n10 Contextual Info: PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD O-247 12N100P 1-08-A f12n10	PDF
f12n10 Abstract: 12n100p f12n Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 PLUS220SMD 12N100P f12n10 f12n	PDF
f12n10 Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXFH12N100P IXFV12N100P IXFV12N100PS 300ns PLUS220 150GS 12N100P 1-08-A f12n10 PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v	PDF