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IXFH12N100P Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH12N100P		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 12A TO-247	Original	PDF		4

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Littelfuse Inc IXFH12N100P Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH12N100P		330		30	1 - 10 - 100 $5.59 1000 $5.59 10000 $5.59	Buy Now
Arrow Electronics	IXFH12N100P		330	20 Weeks	30	1 - 10 - 100 $5.59 1000 $5.59 10000 $5.59	Buy Now
RS	IXFH12N100P	Bulk		8 Weeks	30	1 - 10 - 100 $9.13 1000 $9.13 10000 $9.13	Get Quote
Onlinecomponents.com	IXFH12N100P					1 - 10 - 100 $9.95 1000 $4.75 10000 $4.75	Buy Now
IXYS Corporation IXFH12N100P Trans MOSFET N-CH 1KV 12A 3-Pin(3+Tab) TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IXFH12N100P		263		7	1 - 10 $8.71 100 $7.19 1000 $7.19 10000 $7.19	Buy Now
Newark	IXFH12N100P	Bulk	493		1	1 $12.26 10 $10.62 100 $6.75 1000 $6.13 10000 $6.13	Buy Now
TTI	IXFH12N100P	Tube			300	1 - 10 - 100 - 1000 $5.59 10000 $5.59	Buy Now
Future Electronics	IXFH12N100P	Tube		27 Weeks	300	1 - 10 - 100 $7.48 1000 $7.34 10000 $7.34	Buy Now
TME	IXFH12N100P		263		1	1 $11.25 10 $7.75 100 $6.38 1000 $6.05 10000 $6.05	Buy Now

IXFH12N100P Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: PolarTM HiPerFETTM Power MOSFETs VDSS ID25 IXFH12N100P IXFV12N100P IXFV12N100PS RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS	Original	ixfh12n100p ixfv12n100p ixfv12n100ps 300ns +3plus220 12n100p 1-08-a	PDF
IXFH12N100P Abstract: 12n100p f12n10 Contextual Info: PolarTM HiPerFETTM Power MOSFETs IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1000	Original	ixfh12n100p ixfv12n100p ixfv12n100ps 300ns +6plus220 plus220smd o-247 12n100p 1-08-a f12n10	PDF
f12n10 Abstract: 12n100p f12n Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions	Original	ixfh12n100p ixfv12n100p ixfv12n100ps 300ns +5plus220 plus220smd 12n100p f12n10 f12n	PDF
f12n10 Abstract: 12n100p PLUS220SMD IXFH12N100P IXFV12N100PS diode 6A 1000v Contextual Info: PolarTM Power MOSFET HiPerFETTM IXFH12N100P IXFV12N100P IXFV12N100PS VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 1000V 12A Ω 1.05Ω 300ns PLUS220 (IXFV) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfh12n100p ixfv12n100p ixfv12n100ps 300ns +7plus220 150gs 12n100p 1-08-a f12n10 plus220smd diode 6a 1000v	PDF