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    IXFB300N10P Search Results

    IXFB300N10P Datasheets (1)

    IXYS
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IXFB300N10P
    		IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 300A PLUS264 Original PDF 4
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    IXFB300N10P Price and Stock

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    IXYS Corporation IXFB300N10P

    MOSFETs POLAR PWR MOSFET 100V, 300A
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    Mouser Electronics IXFB300N10P
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    TME IXFB300N10P 300
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    Littelfuse Inc IXFB300N10P

    DiscMosfetN-CH HiPerFET-Polar TO-264(3)
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    RS IXFB300N10P Bulk 8 Weeks 25
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    Onlinecomponents.com IXFB300N10P
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    IXFB300N10P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXFB300N10P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = =   100V 300A  5.5m 200ns PLUS264TM Symbol Test Conditions VDSS VDGR TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M


    Original     		IXFB300N10P 200ns PLUS264TM 100ms 300N10P PDF

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM VDSS ID25 IXFB300N10P RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB300N10P 200ns PLUS264TM 100ms 300N10P PDF

    IXFB300N10P

    Contextual Info: Preliminary Technical Information PolarTM Power MOSFET HiPerFETTM IXFB300N10P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = = ≤ ≤ 100V 300A Ω 5.5mΩ 200ns PLUS264TM (IXFB) Symbol Test Conditions Maximum Ratings


    Original     		IXFB300N10P 200ns PLUS264TM 100ms 300N10P IXFB300N10P PDF