PHILIPS POLYSTYRENE CAPACITORS Search Results

f63 443

Abstract: Philips KS capacitors F63 443 KS Philips polystyrene capacitors 2222 443 iec 61133 polystyrene film Philips KS capacitors date code 442-22 41213
Contextual Info: n~o\ Philips Components Maintenance type Polystyrene film foil capacitors KS 443 KS RADIAL POTTED CAPACITORS DF04101 Fig.1 Simplified outlines. FEATURES QUICK REFERENCE DATA • 2.54 to 7.62 mm lead pitch DESCRIPTION VALUE • Supplied loose and taped on reel

Philips KS capacitors

Abstract: philips polystyrene ks 431 Philips polystyrene capacitors Philips 424 KS polystyrene Philips polystyrene capacitors 427 Philips 424 KS Philips ks 431 Philips KS axial capacitors Philips KS axial capacitors F 160 KS425
Contextual Info: Philips Components Maintenance type Polystyrene film foil capacitors KS 424 to 431 KS AXIAL CAPACITORS FEATURES • Supplied loose in box and taped on reel. APPLICATIONS In circuits where close tolerance, reliability and low losses are of prime importance, for example: tuned

Philips KS capacitors

Abstract: Philips polystyrene capacitors Philips KS 40 f63 443 2222 443 Philips KS capacitors 443 S3V55 Philips film capacitors polystyrene Philips KS capacitors 41622 polystyrene film
Contextual Info: Philips Components Maintenance type Polystyrene film foil capacitors KS 443 KS RADIAL POTTED CAPACITORS o DP041C1 >0 o\ 0s o o 2_ Fig.1 Simplified outlines. FEATURES • 2.54 to 7.62 mm lead pitch QUICK REFERENCE DATA VALUE DESCRIPTION • Supplied loose and taped on reel

Philips KS capacitors

Abstract: Philips 424 KS polystyrene Philips KS axial capacitors 2222 031 capacitor philips 2222 424 philips polystyrene ks 431 CAPACITOR 2222 427 Philips polystyrene capacitors Philips polystyrene capacitors 427 Philips ks 431 polystyrene film
Contextual Info: Philips Components MED529 QUICK REFERENCE DATA Capacitance range 47 to 39 000 pF Capacitance tolerance ±5%, ±2%, ±1% Rated voltage URdc 63 V, 160 V, 250 V, 630 V Climatic category 40/085/21 Rated temperature 85 °C Reference specification IEC 384-7 Stability class

capacitor 0.01 k 630 MKT

Abstract: mepco capacitor capacitor+0.01+k+630+MKT capacitor 0.01 j 100 MKT WIMA mkt 4 WIMA MKT capacitor 0.01 k 400 MKT PHILIPS MKT CAPACITOR SERIES EVOX MMK arcotronics mkt1.60
Contextual Info: FILM CAPACITORS sm FILM Q 2 CAPACITORS Quick Reference Guide Series Former Series Dielectric/ MKT 050 (MKT1.85) Lead Spacing millimeters / (inches) Capacitance Range Voltage Range Metallized Polyester Molded can 5.0 (0.200") 0.001 pF to 1.0 pF 50 VDC to 400 VDC

SOT411

Abstract: SnAg25Sb10 zirconium acetate AgCu28 Transistors smd mark code CuZn15 QFP100 Quad Flat Pack dimensions 271 Ceramic Disc Capacitors SOT538 smd led 5050
Contextual Info: Environmental Information ENVIRONMENTAL SAFETY Offering maximum benefit – minimum impact New technologies result in shared benefits for you our customers, balancing maximum technological benefits with minimum environmental impact. This starts with clever chip designs, which

Philips polystyrene capacitor

Abstract: ferroxcube wideband hf choke PHILIPS 108 CAPACITOR PolyStyrene capacitor 79lc SOT121B Philips polystyrene capacitors 22 pf trimmer capacitor
Contextual Info: Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D • bbSS1^ ! DQETBbb 77E « A P X BLW76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Philips polystyrene capacitors

Abstract: wf vqe 13 E WF VQE 13 WF VQE 23 E WF VQE 14 A6 WF VQE 21 e ad transistors ai 757 wf vqe 21 f ad WF VQE 22 d WF vqe 13 D
Contextual Info: bSE D B 7110fl2b QDb32b3 T3L H P H I N BLW76 PHILIPS IN T E R N A T I O N A L y v H.F./V.H.F. POW ER T R A N SIST O R N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

Philips polystyrene capacitors

Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB

BD443

Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

Contextual Info: N AMER PHILIPS/DISCRETE b^E bbSS^l D 003^3^4 b37 BLW78 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB or B operated mobile, industrial and m ilitary transmitters in the h.f. and v.h.f. bands. It is resistance stabilized and is guaranteed to

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D b b S B ' m DDETBflD DM2 * A P X BLW77 J V . H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

BLW77

Abstract: neutralization push-pull philips Trimmer 60 pf
Contextual Info: PHILIPS bSE » INTERNATIONAL • 7110öSb D0b3277 SSO IPHIN BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power transmitters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am­

BY206

Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

BD443

Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power

4c6 toroids

Abstract: Design of H.F. Wideband Power Transformers Philips Application Note ECO6907 4C6 toroid AN98030 2222 632 BLW96 ECO6907 BLW50F blw96 equivalent
Contextual Info: APPLICATION NOTE Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F AN98030 Philips Semiconductors Two-stage wideband HF linear amplifier for 400 W PEP using BLW96 and BLW50F Application note AN98030 CONTENTS 1 PART 1 SINGLE-STAGE WIDEBAND 1.6 − 30 MHz LINEAR AMPLIFIER FOR 400 W PEP USING TWO BLW96

TRIMMER cap no-2222 809 07015

Abstract: BD433 BLW77
Contextual Info: N AMER PHILIPS/DISCRETE b^E t> m t b s a ' m odetbôd ghs IAPX BLW77 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-AB orclass-B operated high power transmitters in the h .f. and v .h .f. bands. The transistor presents excellent performance as a linear am­

58W SOT

Abstract: BLW85 ZL18
Contextual Info: N AMER P H I L I P S / D IS C R ET E b ^E D b b S 3 T 31 • 0 0 2 ^ 4 ^ 574 IAPX D L V V O O A H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f, transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and

w2 mark 5 pin mosfet smd

Abstract: Philips SC07 Small-signal Transistors transistor bf 175
Contextual Info: For an update of this information, please go to the package website. SC18_1999_.book : SC18_PREFACE_1999 i Wed May 12 11:40:55 1999 Philips Semiconductors Discrete Semiconductor Packages Preface TABLE OF CONTENTS Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . iii

NE5512

Abstract: accelerometers circuits AN144 bridge type transducer 741 OP Amp application integrator differentiator op amp
Contextual Info: INTEGRATED CIRCUITS AN144 Applications for the NE/SA/SE5512 1988 Dec Philips Semiconductors Philips Semiconductors Application note Applications for the NE/SA/SE5512 AN144 The sensitivity of the input stage is approximately DESCRIPTION The NE/SA/SE5512 series of high-performance operational

transistor c 1974

Contextual Info: 11 N AI1ER PHILIPS/DISCRETE bbS3=!31 001370a T QhZ D 86D 0 1 4 7 0 D 11 T BLW60 3 7- If _ V.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and 0 operated mobile, industrial and m ilitary transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized.

Contextual Info: N AMER PHILIPS/DISCRETE fc^E D bbsa^i dos^ m tsd i IAPX BLW60C V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized