SOT172A Search Results

Philips fr 153 30

Abstract: BFQ135
Contextual Info: Philips Components BFQ135 NPN 1 GHz WIDEBAND TRANSISTOR NPN transistor in a ceramic SOT172A2 package. It is prim arily intended for use in M ATV and microwave amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers etc. Emitter ballasting resistors and application of gold sandwich metallization ensure an optimum

RF Wideband Transistors

Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT54variant SOT89 SOT122A SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 Surface-mount yes no no yes no yes yes no no yes yes yes yes yes yes Page . . . . . . . .

sot172a2

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

Contextual Info: Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm

Contextual Info: PDF: 1999 Apr 16 Philips Semiconductors Package outline Studded ceramic package; 4 leads SOT172A1 D A Q A D1 c M N W w1 M A M D2 N3 M1 X detail X H b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions

Contextual Info: Package outline Studded ceramic package; 4 leads SOT172A2 D A Q A D1 c M N W w1 M A M D2 N3 M1 X H detail X b 4 b1 H 1 3 2 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b b1 c D D1 D2 H M M1 N N3 Q mm

BFQ254

Abstract: BFQ234 UBB692 sot172a3
Contextual Info: Product specification Philips Semiconductors r- 7 ^ 3 S " / 7 BFQ254; BFQ254/I PNP 1 GHz video transistor PHILIPS 7110fi2ti D045b3D ITI B I P H I N SbE » INTERNATIONAL PINNING DESCRIPTION PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes,

Contextual Info: P h ilip ^ e m ic o n d u c to r^ ^ ^ • b b 5 3 T 31 Q0 3 1 b b 5 1ST H i APX Product specification NPN 6.5 GHz wideband transistor ^ — DESCRIPTION BFQ135 N AMER PHILIPS/DISCRETE bTE D PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

Contextual Info: ^ 5 3 ^ 3 1 0031741 bTb Philips Semiconductors PNP 1 GHz video transistor APX Product specification BFQ254; BFQ254/I N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

RF Wideband Transistors

Abstract: MS-012AA
Contextual Info: PACKAGE OUTLINES Package SOT23 SOT54 SOT89 SOT96-1 SOT122A SOT122D SOT122E SOT143B SOT143R SOT172A1 SOT172A2 SOT223 SOT323 SOT343N SOT343R SOT353 SOT363 SOT551A Surface-mount yes no yes yes no no no yes yes no no yes yes yes yes yes yes yes Page . .

motorola transistor 5331

Abstract: BFQ254 BFQ234
Contextual Info: Philips Semiconductors bb53^31 Q031741 bTb HAPX PNP 1 GHz video transistor Product specification BFQ254; BFQ254/1 N AUER PHILIPS/DISCRETE DESCRIPTION b=JE D PINNING PNP silicon epitaxial transistor in SOT172A1 and SOT172A3 envelopes, with emitter-ballasting resistors and

TRANSISTOR D 2627

Abstract: D 4206 TRANSISTOR BFQ135 transistor 224-1 base collector emitter DIN45004B bfq135 scattering 1817 transistor 1348 transistor TRANSISTOR C 2570 c 2570 transistor
Contextual Info: P hilip^Sem iconductor^^^^ I I bbS 3 cJ3 1 0 0 3 1 Li Li 5 1 5 'J H i APX Product specification NPN 6.5 GHz wideband transistor BFQ135 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a 4-lead dual-emitter SOT172A1 envelope with a ceramic cap. All leads are

BFQ268

Contextual Info: Philips Semiconductors_ ,—. 7^ 3 3 - 0 5 - NPN 1 GHz video transistor PH ILIPS INTERNATIONAL DESCRIPTION Product specification - BFQ268; BFQ268/1 5bE D • 7 1 1 D flP b OOMShS? 344 « P H I N PINNING NPN silicon epitaxial transistor with

AgCu28

Contextual Info: CHAPTER 7 ENVIRONMENTAL INFORMATION page Introduction 7-2 Explanation of the tables 7-2 General safety remarks 7-5 Substances not used by Philips Semiconductors 7-6 Disposal and recycling 7-7 General warnings 7-7 Chemical content tables: Diodes Transistors

BFQ291

Abstract: BFQ290
Contextual Info: Philips Semiconductors Preliminary specification NPN HDTV video transistor PHILIPS INTERNATIONAL FEATURES • BFQ291 5bE D 7110fl2Li 0 D4 5b 7 4 423 H P H I N PINNING PIN High breakdown voltages DESCRIPTION • Low output capacitance 1 collector • 2 High gain bandwidth product

Contextual Info: Philips Semiconductors • b b S 3 T 31 D D 3 1 ? b fi 64T ■ NPN 1 GHz video transistor ^ i i — DESCRIPTION A P X ^^^Productspecification BFQ268; BFQ268/I ■ N AMER PHILIPS/DISCRETE b'lE D - PINNING NPN silicon epitaxial transistor with emitter-ballasting resistors and a

BFQ290

Abstract: BFQ291
Contextual Info: Philips Semiconductors • bbSBTBl DD317Ô4 T T 1 ■ ! A P X ^ l^ 2!Ì2ÌÌ22il2E 2£ÌÌÌ£2ÌÌ^ PNP HDTV video transistor BFQ290 N AnER PHILIPS/DISCRETE b^E D PINNING FEATURES 4 DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1

D02fc

Abstract: transistor 7806 2454 transistor 72A2 BFQ621 DIN45004B Philips FA 145 BFQ6
Contextual Info: Philips Semiconductors Product specification NPN 7 GHz wideband transistor BFQ621 FEATURES DESCRIPTION • High power gain Silicon NPN transistor in a 4-lead dual-emitter SOT 172A2 package with a ceramic cap. All leads are isolated from the mounting base. Emitter ballasting resistors and application

BFQ741

Contextual Info: Objective specification Philips Semiconductors ' '3 3 -Q5 NPN 7 GHz wideband transistor PH IL IP S I N T E R N A T I O N A L FEATURES 5L.E D • BFQ741 711GflEb ODMSbflO 727 ■ P H I N PINNING DESCRIPTION PIN • Low distortion • Gold metallization ensures

BFQ290

Abstract: BFQ291
Contextual Info: Prelim inary specification P hilips Sem iconductors -3 3 -S 7 PNP HDTV video transistor PH IL I P S I N T E R N A T I O N A L SbE ]> BFQ290 711Dfl2h 00 45 b7 3 5T7 PINNING FEATURES DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 collector

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

100-C

Abstract: BFQ290 BFQ291
Contextual Info: PMlips_Semiconductors jB t a b S B 'I B l 0 0 3 1 7 fl5 T2fl IHAPX Pre,iminary specification NPN HDTV video transistor — — BFQ291 — N AMER PHILIPS/DISCRETE FEATURES t.'JE » PINNING • High breakdown voltages • Low output capacitance PIN 1 DESCRIPTION

RF Power Transistors

Abstract: sot172a MM 4054 mba512 sot123 FO-83A philips rf transistors sot172 sot268
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF Power Transistors for UHF 1996 Feb 20 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF Package outlines 8.0 0.1 Al 2 O3 0.125 seating plane 3 BeO 5.30 max 4.0

BFQ26

Abstract: BFQ268
Contextual Info: Philips Components bfq268 _ j \ _ NPN HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR NPN silicon epitaxial transistor w ith em itter ballasting resistors and a gold sandwich metallization to ensure optim um temperature profile and excellent reliability properties. It features high break-down