PEPI CR Search Results

pepi c

Abstract: DM100 pepi pepi N HV100 HV300 ISO14000 DM-300 pepi b PEPI N-1
Contextual Info: 2.0 µm 5V/100V/300V Analog CMOS Process Parameters Technology outline • • • • • • • • Standard 2 Micron 5V control logic 100V & 300 V N & P channels transistors Low On-Resistance Epi wafers Thin gate oxide State of the art double metal technology [Ti/TiN/Al/TiN

Contextual Info: MOE D • MOSSTlb 0D137Ö3 3 ■ A M I . . T - M 2 - 8 \ G ould AMI S ilic o n F ou n d ry A pproach Gould AMI is proud of the leadership position it occupies in today’s fast-paced world of process and technology. Our Silicon Foundry services and capabilities are truly world class. We pro­

TD 6905 S

Abstract: ci 7430 TD 6905
Contextual Info: LDVER ROW 1000PF, 2 K V ELECTRICAL SPECIFICATIONS: 1.Û TURNS RATID P L -P 4 -P 2 i C J1-J2) (P 3 - P 7 - P 6 ) i C J 3 -J 6 ) 2.0 INDUCTANCE (P 6 -P 3 ) (PE-PI) 3.0 LEAKAGE INDUCTANCE P 6 -P 3 <V1TH J 6 AND J 3 SHDRT) P2-P1 (WITH JE AND J1 SHDRT) 4.Û INTERWINDING CAPACITANCE (P 6 ,P 7 ,P 3 ) TD (J 6 ,J 3 >

Ta75458p cross

Abstract: ta7545bp C12S TA75458F TA75458P
Contextual Info: BIPO LAR LIN EA R INTEGRATED CIRCUIT SILICON MONOLITHIC TA75458P/F DUAL OPERATIONAL AMPLIFIER . Pair of Internally Compensated High Performance Amplifier . No Frequency Compensation Required . No Latch-up Short Circuit Protection . Wide Common Mode and Differential Voltage Range

MC 2882

Abstract: 2SC2862 MC 342 transistor 210B MC 2871
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

transistor KD 503

Abstract: kd 503 transistor MRF466 2N5941 MRF-466
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF466 T h e R F Line 4 0 W P E P NPN SILICON RF POWER TRANSISTOR RF PO W E R T R A N S IS T O R . designed p rim a rily for applications as a hig h -p ow e r a m p lifie r from 2.0 to 30 MHz, in single sideband m obile, m arine and base

harris 6616

Contextual Info: Honeywell ROMs HC6616 2K x 8 RADIATION-HARDENED ROM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiah .2 \im Process • Typical 45 ns Access Tim e • Total Dose Hardness through 1x106 rad S i02 • Low Operating Power • Neutron Hardness through 1x1014c n r2

harris 6616

Contextual Info: b3E D MSS1Ö7E 0 0 0 0 * 1 0 5 ROMs Honeywell 1ST * H 0 N 3 HONEYÜI ELL/ S S E C 2K x 8 RADIATION-HARDENED ROM HC6616 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial1.2 im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x106 rad(Si02

AAF40

Abstract: atechnology
Contextual Info: HONE Y KE LL/ S H o n e y w 1SE 0 S E C I MSSlä?a 00QGM37 □ | HC6616 e l l Preliminary Military Products 2K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION Fabricated with RICMOS Epitaxial 1.2 pm Process Typical 45 ns Access Time Total Dose Hardness through

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

harris 6616

Contextual Info: Honeywell HC6616 Military Products Preliminary 2K x 8 RADIATION-HARDENED ROM FEATURES O TH ER R AD IATIO N • Typical 55 ns A ccess Tim e • Fabricated w ith RICMOS Epitaxial 1.2 |im Process • Low O perating Pow er • S ynchronous O peration • Total Dose H ardness through

USE OF TRANSISTOR

Abstract: pepi c thermal transistor and or IC Ultrasonic pepi testing good or bad electronic components circuit TO-220FN pn junction diode structure shin-etsu Chemical
Contextual Info: Operation notes Transistors Operation notes zSelecting semiconductor devices The reliability of semiconductor devices is determined primarily by conditions of use. When using semiconductors, pay careful attention to any changes in conditions and be aware of the specifications of each device. Absolute maximum

Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

chip diagram of ram chip 6116

Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz

Contextual Info: Technical information Back-thinned TDI-CCD Back-thinned TDI time delay integration -CCDs allow acquiring high S/N images even under low-light conditions during high-speed imaging and the like. TDI operation yields dramatically enhanced sensitivity by integrating the

socket g34 pinout

Abstract: smd marking WMM
Contextual Info: b3E » 4S51Ô72 DDQCmb Honeywell TDS H I H 0 N 3 8K X 8 RADIATION-HARDENED ROM HC6664 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 nm Process • Listed on SMD #5962-93171. Available as MIL-l-38535 QML Class Q and V • Total Dose Hardness through 1x10s rad Si02

NMOS depletion pspice model

Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
Contextual Info: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications

HX6856

Contextual Info: b3E » Honeywell 4551Ö72 OGODTTS S71 • H 0 N 3 Military Products HON E Y I i J E L L / S S E C Preliminary 32K X 8 RADIATION-HARDENED STATIC RAM-SOI HX6856 FEATURES RADIATION OTHER Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 urn Process

Contextual Info: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02

6216 sram

Contextual Info: b3E D SRAMs M5 5 1 Ô7 2 DÜQQ^Dñ HONEYUELL/ S Honeywell b?b « H 0 N 3 S E C 2K x 8 RADIATION-HARDENED STATIC RAM HC6216 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2|im Process • Typical 45 ns Access T im e • Total Dose Hardness through 1x10s rad S i0 2

Contextual Info: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02