C12S Search Results

BdP 285

Abstract: bdp 286 BDP286 BDP285 BUCP-52 BDP396 BDP 284 BP469 BC-148 BDP495
Contextual Info: TRANZYSTORY Wykaz oznaczert parametrów technicznych CCBO C12es C12ss t p fT P h2le XB pojemnoóò kolektor - baza pojemnoóé sprzgzenia zwrotnego w ukladzie wspòlnego «altera /OE/ pojemnosé sprzeienia zwrotnego w ukladzie wspòInego iródta /OS/ oziatotiiwoàé pomiarowa

Contextual Info: 1 Coaxial Microwave Resistors 16 -> | < -L -> <— O.D. RODS tr « f IVN C40R115 c e o R t it f p C62R187 C62R1&7P C62R375P C12SR408 C125R500 C12SRS0OP C250R500P C260R7SOE C375R750P NOMINA t a \> L .039 - .044 a m - <&s 060 - 066

transistor BF 245

Abstract: bf 245 BF245 transistor BF245 transistor BF 245 c transistor BF245 A BF245 canal n BF245 TRANSISTOR BF 245 C transistor Bf-245
Contextual Info: BF245 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFE T DE CHAMP, SILICIUM , CANAL N - LF and HF amplification Vos 30 V max IDSS 2 . 25 mA .Vg s = 0 in 3 groups Amplification BF et H F en 3 groupes 1,1 pF typ. C12S Plastic case F 139 B — See outline drawing CB-76 on last pages

SM74HC125

Abstract: HC12S 8112G
Contextual Info: SN54HC125, SN54HC126 C12S, SN74HC126 QUADRUPLE BUS BUFFER GATES WITH 3-STATE OUTPUTS D2804, M A R C H 1 9 8 4 - R E V IS E D JU N E 1989 SN54HC125. SN54HC126 . SN74HC125, S N 7 4 H C 1 26 . 'High-Current 3-State Outputs Interface Directly with System Bus or Can Drive Up

L293D motor driver

Abstract: diagram and operation of L293D motor driver L293D FULL-H DRIVER L293D application note L293D schematic diagram D3511 L293D current driver l293D motor all L293d data sheet SLRS008A
Contextual Info: L293D QUADRUPLE HALF-H DRIVER SLRS008A - D3511, SEPTEMBER 1986 - REVISED MAY 1990 600-mA Output Current Capability Per Driver Pulsed Current 1.2-A Per Driver Output Clamp Diodes for Inductive Transient Suppression Wide Supply Voltage Range 4.5 V to 36 V Separate Input-Logic Supply

M7707

Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Contextual Info: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone

FMXMC12S

Abstract: crystals
Contextual Info: C12S SERIES Surface Mount Ceramic Pkg. Micro 2 x 1.2 / Ultra Thin Microprocessor Crystals 32.768 kHz CERAMIC SMD 2x1.2 Tight Stability SPECIFICATIONS Issue 1 - 05222012 2 x 1.2 CERAMIC SMD Parameter Specification Frequency Load Capacitance CL Frequency Tolerance

Contextual Info: A Cirrus Logic Company 8-Pin, Stereo A/D Converter for Digital Audio Features General Description The CS5330A / 31A is a complete stereo analog-todigital converter which performs anti-alias filtering, sampling and analog-to-digital conversion generating 18-bit values for both left and right inputs in serial form.

transistor smd d9d

Abstract: smd transistor r5c transistor SMD a10a 4E smd diode smd transistor d9d DC1652A
Contextual Info: DEMO MANUAL DC2064A LTC3300-1/LTC6803-2 Bidirectional Cell Balancer DESCRIPTION Demonstration Circuit DC2064A is a bidirectional cell balancer using two LTC 3300-1 ICs to achieve active cell balancing of up to 12 Li-Ion batteries. The board uses the LTC6803-2 multi-cell addressable battery stack monitor to

KT835A

Abstract: KT827A KT827A-KT827B kt601 KT827B KT604 KT835B KT645 USSR KT827
Contextual Info: THE GENERAL SU PPLIER OF THE PRODUCTS OF THE ELECTRONIC INDUSTRY OF THE USSR s HACTQanuáí BanycK h m h e tc h äohojihehhem nj PÂHEE H3HAHH0M7 CBOÆHOMy KATMOIY TPAH3HCTOPOB V * 1 8 # 1979 Á THE PRESENT CATALOGUE IB SUPPLEMENT TO THE 1979 TRAKSISTOB CATALOGUE

transistor a effet de champ

Abstract: BF247 transistor 139 BF signaux
Contextual Info: BF247 F IE L D E FFEC T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E FFE T DE CHAMP, SILICIUM, CANAL N -Amplification Amplification -Chopper Découpeur V DS 25 V max. ' dss 30 . . . 25 0 mA à V QS = 0 in 3 groups e n 3 groupes 2 3 m A /V ty p à V GS = 0

BC264

Abstract: transistor a effet de champ b c 264 transistor bc264 F-139 equivalent transistor BC 55 TRANSISTOR effet de champ BC 264 CB-76 50 transistor BC 1 BF 212 transistor
Contextual Info: BC 264 FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EF FE T OE CHAMP, SILICIUM, CANAL N - LF amplification Amplification BF V DS 30 V max. ' dss 2 . . . . 12 mA à V GS = 0 in 4 groups en 4 groupes F 2 dB max à V q § = 0 f » 1 kHz Plastic case F 139 B — See outline drawing CB-76 on last pages

T-7S83U-40

Abstract: QQ-Z-325a Ferrite circulator at 15 GHz t-1s63u-40 T-7S43U-30 Ferrite Circulators at 15 ghz C-7S44U-30 qq-z-325 C-12S44U-30 T-8S43U-20
Contextual Info: &ERRITEPRODUCTS the complete microwave solution Ferrite Isolators and Circulators Basic Description of Operation The typical junction circulator is basically made up of a 3-arm stripline circuit sandwiched between 2 wafers of ferrite and dielectric material known as pucks

MBG788

Abstract: digital servo OQ8844 SO20
Contextual Info: INTEGRATED CIRCUITS DATA SHEET OQ8844 Digital Servo Driver DSD-2 Product specification File under Integrated Circuits, IC01 1995 Nov 27 Philips Semiconductors Product specification Digital Servo Driver (DSD-2) OQ8844 FEATURES GENERAL DESCRIPTION Servo functions

DFDH2012T900S

Abstract: LPC 815 LG F11YT1 HAT2180RP G402R P06KE GP03S ara cd 100 39p LPC TPM 0603FT
Contextual Info: 1-fid e n tic i Iw in iie a u Model : F11YT1 R:0 Intel Yonah ULV+Calistoga 945GM+ICH7-M Revision History ORIGINAL RELEASE A B 2006/01/12 Rev:B release. c 2006/03/17 R e v :C release. 2006/03/31 R e v :0 release. PCB STA C K U P LAY1 LAY2 LAY3 LAY4 LAY5

PH 71719

Abstract: gp027 c114 esh GP030 URP15 ad4 1314 2SL42 C14-17 LA 7814 EX237
Contextual Info: I »? il U _,c o £2 ÙSL 2 2 / m M 8IfiSSSïS51! | | | l| | | * I | S | ! ii| | | | | | | | l! I ilii l| g l| ïI ï| i| i | - fr s r T ü T -Ü Ï3 T 83T “W “ ÏÏT —u r — z r “ TO T -fT F T “ 7 TFT - :.s u ¿Va .T I T

LQ 425 B8

Abstract: I-6520 MC12513 lfl 1.635 MC12013 MC12011 MC4044 MC120131 IO116 SG72 surge resistor
Contextual Info: m o t o r o l MC12009 MC12509 — MC12011 MC12511 MC12013 MC12513 a M ECL PLL CO M PO N EN TS TWO-MODULUS PRESCALER TWO-MODULUS PRESCALER T h e s e d e v ic e s a re tw o - m o d u lu s p re s c a le rs w h ic h w ill d iv id e b y 5 a n d 6, 8 a n d 9, a n d 10 a n d 11, re s p e c tiv e ly . A M E C L -to -M T T L

20.000 G Oscillator

Abstract: f5c fox F5C-S7 14.31818 28.322 MHZ oscillator
Contextual Info: FOX ELECTRONICS ESE D • 3?On3E 0D00341 4 ■ "T* 50-2.2, F5C-7/HCMOS INDEPENDENT DUAL OUTPUT OSCILLATOR The FOX F5C -7 Independent Dual Output Oscillator employs two separate crystals to obtain two different frequencies from one package. With two separate crystals, one frequency is not

c106 1006

Abstract: GC101-12 C144 sa 2n3904, itt GC101 41256 ram memory mapper A1723 GC101/GC102 GC101-16
Contextual Info: GCIOI / GC102 12/16 MHZ PC/AT COMPATIBLE CHIP SET G2 Description Features • Highly integrated PC /A T compatible three chip set. • Supports up to 4 M eg D R A M using 1M or 256k devices. • Available in 16MHz and 12MHz ver­ sions. • Designed in CM OS for low power

bzp 650 c10

Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
Contextual Info: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .

Contextual Info: ASÍ} AUSTIN SEMICONDUCTOR, INC. A¿ í£ 1259 3íí 256K X 1 DRAM 256K X 1 DRAM DRAM FAST PAG E MODE AVAILABLE AS M ILITARY SPE C IFIC A TIO N S PIN ASSIGNMENT Top View • MIL-STD-883 18-Pin LCC 16-Pin DIP (D-2) FEATURES • Industry standard pinout and timing

MDD 1654

Abstract: TMT Isolator wr 90 x band flange waveguide teledyne yig oscillator 10GHz bandpass filter yig oscillator hp m7928 teledyne microwave mbg ferretec filtronic band-pass
Contextual Info: TELEDYNEMICROWAVE the complete microwave solution Table of Contents Company Profile. . . . . . . . . . . . . . . . . . . . . . . . . 5 Sub-Systems. . . . . . . . . . . . . . . . . . . . . . . . . . 7 Diplexers and Multiplexers. . . . . . . . . . . . . . . . . . . . . . . . . . 82

NE25139

Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm

Contextual Info: THIS DRAWING AND DESIGN HEREON CON­ STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH­ OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DATE SYM 18JNÌ0 DO NOT SCALE 4.35X0.10-+- 30JL90 © 26NO<]0 23JA91