PASSIVATION Search Results

TGF1350

Contextual Info: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation

5SMY 12J1721

Contextual Info: Data Sheet, Doc. No. 5SYA 1325-01 12 01 5SMY 12J1721 IGBT-Die VCE = 1700 V IC = 75 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage

TPSMA*A

Contextual Info: TPSMA6.8 thru TPSMA43A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology

Contextual Info: microtech GmbH electronic Teltow Chip resistors - Made in Germany ISO/TS 16949:2009 Thick film series - Standard Type: CDF Sizes: 0402, 0603, 0805, 1206 Characteristics: • • • • • • • Chip resistors in thick film technology Resistance area coated with glass and varnish passivation

Contextual Info: P6KA6.8 thru P6KA43A Vishay General Semiconductor PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high

MBRA340T3G

Abstract: DIODE marking code A34
Contextual Info: MBRA340T3G, NRVBA340T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

MBRS360T3G

Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

NRVBS2040LT3G

Abstract: 403A-0 MBRS2040LT3G
Contextual Info: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation

Contextual Info: 16RIA Series Vishay High Power Products Medium Power Thyristors Stud Version , 16 A FEATURES • Improved glass passivation for high reliability and exceptional stability at high temperature RoHS COMPLIANT • High dI/dt and dV/dt capabilities • Standard package

3BZ marking

Abstract: TABLE200 3By marking 3KASMC 3bm -3.3 marking 3Bk
Contextual Info: 3KASMC10 thru 3KASMC43A www.vishay.com Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology

AXP 188

Abstract: btp 128 550 BDP 162 DO-220AA J-STD-002 AXP 209 btp 129 MARKIN CODE 324 arp
Contextual Info: New Product TPSMP6.8 thru TPSMP43A Vishay General Semiconductor High Power Density Surface Mount PAR Transient Voltage Suppressors FEATURES ® • Junction passivation optimized design passivated anisotropic rectifier technology eSMP Series • TJ = 185 °C capability suitable for high reliability

J-STD-002

Abstract: TPSMC10 TPSMC10A
Contextual Info: TPSMC6.8 thru TPSMC47A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology

EPA240D

Contextual Info: Excelics EPA240D DATA SHEET High Efficiency Heterojunction Power FET • • • • • • 410 +33dBm TYPICAL OUTPUT POWER 20.0 dB TYPICAL POWER GAIN AT 2GHz 0.4 X 2400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION

L 9101

Abstract: HSCH-9101 HSCH-9201 HSCH-9251 VF10 HSCH9201
Contextual Info: Agilent HSCH-9101/9201/9251 GaAs Beam Lead Schottky Barrier Diodes Data Sheet Features • Gold tri-metal system for improved reliability • Low capacitance • Low series resistance • High cutoff frequency • Polyimide passivation HSCH-9201 Description

EFC060B

Contextual Info: Excelics EFC060B PRELIMINARY DATA SHEET Low Distortion GaAs Power FET • • • • • • • +25.0dBm TYPICAL OUTPUT POWER 10.5dB TYPICAL POWER GAIN AT 12GHz HIGH BVgd FOR 10V BIAS 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE

G200

Abstract: f 0952
Contextual Info: PTF 102028 18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor Description The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.

marking code onsemi Diode B34

Abstract: b34 DIODE schottky SMC 403-03 MBRS340T3 b34 diode diode marking b34 marking B34 diode SCHOTTKY DIODE ON SEMICONDUCTOR B34 DIODE B34 diode schottky B34
Contextual Info: MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay

BUD620

Abstract: E2 p SMD Transistor
Contextual Info: Temic BUD620 S e m i c o n d u c t o r s Silicon NPN High Voltage Switching Transistor Features • Simple-sWitch-Off Transistor SWOT Very low dynamic saturation HIGH SPEED technology Very low operating temperature Planar passivation Optimized RBSOA 100 kHz switching rate

EFA040A-70

Abstract: PT 1132
Contextual Info: Excelics EFA040A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +22.0dBm TYPICAL OUTPUT POWER 8.0dB TYPICAL POWER GAIN AT 12GHz 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

Contextual Info: SLSD-71N1 SILO NEX Solderable Planar Photodiode Features • Visible to IR spectral range • High reliability, oxide passivation • High open circuit voltage • Linear short circuit current • Low capacitance, high speed • Solderable contacts 0.200 0.040

EFA080A-70

Contextual Info: Excelics EFA080A-70 DATA SHEET Low Distortion GaAs Power FET 44 19 4 20 S S 70 D 40 NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION

2N65s

Abstract: S2003LS1 S4003LS3 T106A1 EC103A S2003LS3 T106F1 S4003LS2 S6003LS2 KT106
Contextual Info: à ? vV TECCOR ELECTRONICS, INC. A S IE B E COMPANY 1801 H U RD D R IV E IR V IN G , T E X A S 75038-4385 PH O N E 214/580-1515 FA X 214/550-1309 TO-92 TO-202AB TH ERM O TAB TO-220AB SENSITIVE SCRs 0.8 - 10 Amps G EN ER A L DESCRIPTION G LA S S PASSIVATION

13005 2 transistor

Abstract: D13005 TRANSISTOR 13005 13005 s 13005 TRANSISTOR d13005t 13005T 13005 ballast 13004 TRANSISTOR transistor 13005 CIRCUIT
Contextual Info: TD13004 • TD13005 Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology Very low dynam ic saturation • G lass passivation Very low operating tem perature • Very short sw itching times High reverse voltage

Contextual Info: T e m ic BUF660 Semiconductors Silicon NPN High Voltage Switching Transistor Features • • • • • • • • • Simple-sWitch-Off Transistor SWOT HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation