NRVBS360T3G Search Results

NRVBS360T3G Datasheets (1)

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On Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
NRVBS360T3G		On Semiconductor	NRVBS360 - DIODE RECTIFIER DIODE, Rectifier Diode	Original	PDF	129.3KB	7

NRVBS360T3G Price and Stock

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onsemi


onsemi NRVBS360T3G Schottky Diodes & Rectifiers RECTFR 3.0 A 60 V SUR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	NRVBS360T3G					1 $0.69 10 $0.49 100 $0.48 1000 $0.39 10000 $0.34	Get Quote
Quest Components ()	NRVBS360T3G		2,838			1 $0.66 10 $0.66 100 $0.66 1000 $0.28 10000 $0.28	Buy Now
	NRVBS360T3G		706			1 $1.00 10 $1.00 100 $1.00 1000 $0.26 10000 $0.26	Buy Now
onsemi NRVBS360T3G-IR01 RECTIFIER DIODE, SCHOTTKY, 1 PHASE, 1 ELEMENT, 3A, 60V V(RRM), SILICON, DO-214AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	NRVBS360T3G-IR01		2,500			1 $1.35 10 $1.35 100 $1.35 1000 $0.56 10000 $0.49	Buy Now

NRVBS360T3G Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MBRS360T3G Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3 Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3	PDF
5M MARKING CODE DIODE SMC Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC	PDF
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D	PDF
Contextual Info: Bill of Materials for the NCV898031SEPGEVB Evaluation Board Designator Quantity Description Value Tolerance Footprint Manufacturer Manufacturer Part Number C1, C11, C13 C2 C3 C4 C5 C6, C10 C7 C8 C9 C12 D1 D2, D3 L1, L2 Q1 R1 R2 R3 R4 R5 R6 R7 R8, R10 R9 TP1, 3, 4, 7, 8, 14,	Original	NCV898031SEPGEVB 6800PF 680PF 100PF 120PF 1000/PKG K24C/M NCV898031D1R2G	PDF