OCT26 Search Results

USB B PCB RIGHT ANGLE 4 PIN

Abstract: usb mini dwg
Contextual Info: 7 8 6 5 3 4 1 2 REV - DESCRIPT - DATE - APPRVD B UPDATED JUNE 1,07 AG C DIMENSIONS ADDED OCT26,07 AG . REAR SHIELD, 0.3MM THICKNESS F F 0.393 9.98 SHIELD THICKNESS 0.3MM NOT INCLUDED DUST COVER,SEE DWG NO. MUSB-2E151-005BP FOR DETAIL 0.098 2.50 0.208 5.3 0.362

Contextual Info: F M REV A B C 13.0 12.2 REVISIONS DESCRIPTION, ECN, EAR NO. NEW PROPOSAL CHANGE THE NOTES ABOUT GEL CORRECT WORD SPELLING IN NOTES DATE OCT26/12 OCT31/12 NOV05/12 APP'D L.CHAN L.CHAN L.CHAN 2 3 NOTES: MATERIALS: HOUSING: ENGINEERING THERMOPLASTIC, FLAMMABILITY U L94V-0

mmic-amplifier

Abstract: VPS05178 337 BGA
Contextual Info: BGA 312 Silicon Bipolar MMIC-Amplifier 3
Cascadable 50 -gain block
11 dB typical gain at 1.0 GHz 4
9 dBm typical P -1dB at 1.0 GHz
3 dB-bandwidth: DC to 2.0 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 312

Bb515

Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3
For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package

Contextual Info: BGX 400 Silicon Switching Diodes Preliminary data 3
Switching applications
High breakdown voltage
Halfbridge rectifier 2 1 VPS05161 1 3 2 EHA07365 Type Marking BGX 400 GXs Pin Configuration 1=C1/A2 2=C2 Package 3=A1 SOT-23 Maximum Ratings Parameter Symbol

VSO05561

Contextual Info: BF 799W NPN Silicon RF Transistor 3
For linear broadband amplifier application up to 500 MHz
SAW filter driver in TV tuners 2 1 Type Marking BF 799W LKs Pin Configuration 1=B 2=E VSO05561 Package 3=C SOT-323 Maximum Ratings Parameter Symbol Value Unit

MARKING 19S

Abstract: BFG19S VPS05163
Contextual Info: BFG 19S NPN Silicon RF Transistor
For low noise, low distortion broadband 4 amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 3 2 1 VPS05163 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BF 517 NPN Silicon RF Transistor 3
For amplifier and oscillator applications in TV-tuners 2 1 Type Marking BF 517 LRs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 15 Collector-base voltage

transistor zs

Abstract: transistor MJE -024 BFR340T BFR34* transistor C5 MARKING TRANSISTOR
Contextual Info: BFR340T NPN Silicon RFTransistor Preliminary data 3
Low voltage/ low current operation
Transistor frequency of 14 GHz
High insertion gain
Ideal for low current amplifiers and oscillators 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking u1s SOT-143

Abstract: VPS05178 chip Marking 3A3
Contextual Info: BGX 50A Silicon Switching Diode Array 3 • Bridge configuration • High-speed switching diode chip 4 2 1 2 3 VPS05178 1 4 EHA00007 Type Marking BGX 50A U1s Pin Configuration 1=C1/C2 2=A1/C4 3=A3/A4 Package 4=A2/C3 SOT-143 Maximum Ratings Parameter Symbol

UL-1950

Contextual Info: 1. M e c h a n ic a l D im e n s i o n s : 2. S c h e m a t i c : PRI Line 1o SEC (Chip) ^ 0 8 30- -0 5 20 -07 - 4o- -06 3. Electrical Specifications: 25DC OCL: Pins 1-4 98uH±6% @10KHz 0.1V, Tie Pins 2- 3 LL: Pins 1-4 2,5uH Max @1Q0KHz 0.1 V, Tíe Pins 2-3, 5 - 6 - 7 - 8

VPS05178

Abstract: BGA 310
Contextual Info: BGA 310 Silicon Bipolar MMIC-Amplifier 3
Cascadable 50 -gain block
9 dB typical gain at 1.0 GHz 4
9 dBm typical P -1dB at 1.0 GHz
3 dB-bandwidth: DC to 2.4 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 310

VPS05161

Contextual Info: BF 771 NPN Silicon RF Transistor 3
For modulators and amplifiers in TV and VCR tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 771 RBs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

SC-75

Abstract: GMA marking
Contextual Info: BFR 181T NPN Silicon RF Transistor Preliminary data 3
For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA
fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

k d 998 0

Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Contextual Info: BF 998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

s parameters 4ghz

Contextual Info: BFR360F NPN Silicon RFTransistor Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz 2 3 1 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VPS05163

Abstract: BSP 17 D
Contextual Info: BSP 60 . BSP 62 PNP Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage • Complementary types: BSP 50 . BSP 52 NPN 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP 60 BSP 60 1=B 2=C 3=E

VPS05163

Abstract: BSP52
Contextual Info: BSP 50 . BSP 52 NPN Silicon Darlington Transistors • High collector current 4 • Low collector-emitter saturation voltage • Complementary types: BSP 60 . BSP 62 PNP 3 2 1 Pin Configuration VPS05163 Type Marking Package BSP 50 BSP 50 1=B 2=C 3=E

BFr pnp transistor

Abstract: BFR106 Transistor BFR 80 BFR 30 transistor
Contextual Info: BFR 106 NPN Silicon RF Transistor 3
For low noise, high-gain amplifiers
For linear broadband amplifiers
Special application: antenna amplifiers
Complementary type: BFR 194 PNP 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution!

VCR modulators

Abstract: 770a
Contextual Info: BF 770A NPN Silicon RF Transistor 3
For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 770A LSs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings

RF NPN POWER TRANSISTOR 2.5 GHZ

Abstract: VSO05561 MARKING 1t SOT- 323
Contextual Info: BF 775W NPN Silicon RF Transistor 3
Especially suitable for TV-sat and UHF tuners 2 1 VSO05561 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775W LOs Pin Configuration 1=B 2=E Package 3=C SOT-323 Maximum Ratings

VPS05178

Contextual Info: BGA 318 Silicon Bipolar MMIC-Amplifier 3
Cascadable 50 -gain block
16 dB typical gain at 1.0 GHz 4
12 dBm typical P -1dB at 1.0 GHz
3 dB-bandwidth: DC to 1.2 GHz 2 1 RF IN RF OUT/Bias 1 VPS05178 3 Circuit Diagram 2, 4 GND EHA07312 Type Marking BGA 318

Transistor K 799

Abstract: transistor BF 450
Contextual Info: BF 799 NPN Silicon RF Transistor 3
For linear broadband amplifier application up to 500 MHz
SAW filter driver in TV tuners 2 1 Type Marking BF 799 LKs Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23 Maximum Ratings Parameter Symbol Collector-emitter voltage

Contextual Info: BF 775 NPN Silicon RF Transistor 3
Especially suitable for TV-sat and UHF tuners 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 775 LOs Pin Configuration 1=B 2=E Package 3=C SOT-23 Maximum Ratings