Bb515
Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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vps05161ot-23eht07315eht07316+4bb515ehm07024oct-26-1999bf999
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BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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Original
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bf999vps05161nov-08-2002bf99cal |
PDF
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bb515
Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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Original
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bf999vps05161eht07315eht07316+3bb515ehm07024jun-28-2001
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PDF
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BB515
Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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Original
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bf999vps05161eht07315eht07316+3bb515ehm07024nov-08-2002
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PDF
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