Bb515
Abstract: bf999
Contextual Info: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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vps05161ot-23eht07315eht07316+4bb515ehm07024oct-26-1999bf999
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BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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bf998
Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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bf998vps05178ot143eht07305+3eht07306aug-10-2001bf998 mosfet tetrode application note
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k d 998 0
Abstract: transistor BF 998 998 transistor bf998 EHT0730 VPS05178 BF 998
Contextual Info: BF 998 Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor with high S/C quality factor 4 For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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vps05178ot-143res00eht07305+8eht07306oct-26-1999k d 998 0transistor bf 998998 transistorbf998eht0730bf 998
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bb515
Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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bf999vps05161eht07315eht07316+3bb515ehm07024jun-28-2001
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BF998W
Abstract: SOT 343 MARKING BF BF998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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bf998wvps05605ot-343cha00+5eht07305eht07306may-05-1999sot 343 marking bfbf998
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Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998
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62702-f1129thet07304fi235bq5d1e174e+1q1517m3
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BF998W
Abstract: 998 transistor bf998 102001 transistor BF 998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3 Short-channel transistor 4 with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking
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bf998wvps05605ot343eht07305+6eht07306aug-10-2001998 transistorbf998102001transistor bf 998
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BB515
Abstract: BF999
Contextual Info: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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bf999vps05161eht07315eht07316+3bb515ehm07024nov-08-2002
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BF998R
Abstract: 998 transistor transistor BF 998
Contextual Info: BF998R Silicon N-Channel MOSFET Tetrode Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration
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bf998rot143rsold00eht07305+4eht07306aug-10-2001998 transistortransistor bf 998
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