BF998W |
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Infineon Technologies
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Silicon N-Channel MOSFET Tetrode |
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Original |
PDF
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BF998W |
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Siemens
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RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide |
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Original |
PDF
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BF998W |
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Siemens
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Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
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Original |
PDF
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BF998WR |
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NXP Semiconductors
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BF998WR - N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 22 mS |
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Original |
PDF
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BF998WR |
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Philips Semiconductors
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N-channel dual-gate MOS-FET |
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Original |
PDF
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BF998WR,115 |
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NXP Semiconductors
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BF998 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, PLASTIC, SOT-343R, 4 PIN, FET RF Small Signal |
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Original |
PDF
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BF998WR,115 |
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 22 mS; Package: SOT343R (CMPAK-4); Container: Tape reel smd |
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Original |
PDF
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BF998WRT/R |
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NXP Semiconductors
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N-channel dual-gate MOS-FET - CIS TYP: 2.1 pF; COS: 1.05 pF; ID: 30 mA; IDSS: 2 to 18 mA; IDSS min.: 1.05 mA; Noise figure: 1@800MHz dB; Note: With external bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 2 V; VDSmax: 12 V; YFS min.: 22 mS |
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Original |
PDF
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BF998WRTR |
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Philips Semiconductors
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N-channel dual-gate MOS-FET |
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Original |
PDF
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