NPN/TRANSISTOR C 331 Search Results

marking xa

Abstract: XA MARKING CODE CMPTA29 sot 23 marking code c29
Contextual Info: Central C M P T A 29 Sem iconductor Corp. HIGH VOLTAGE NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: T he CENTRAL S E M IC O N D U C TO R CMPTA29 is a Silicon NPN Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount

transistor smd zG

Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Contextual Info: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with

bfq34 application note

Abstract: ON4497 BFQ34 sf 122 transistor
Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a

philips bfq

Abstract: BFQ263 BFQ263A RK 100
Contextual Info: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with

3004x

Abstract: antenna amplifiers Transistor BFX 25 BFX55 63310-A Q60206-X55
Contextual Info: BFX55 NPN Transistor for VHF output stages in antenna amplifiers B F X 5 5 is an epitaxial NPN silicon planar transistor in a case 5 C 3 DIN 41 873 T O -39 . The colle cto r has been electrically connected to the case. The transistor is especially suitable fo r use in the VHF o u tp u t stages o f channel- and w ideband antenna

1581m

Abstract: nec ps2021 PS2021 M5010
Contextual Info: PHOTO CO U PLER PS2021 PHOTO CO U PLER High Isolation Voltage Single Transistor — n epo c s e r ie s - D E S C R IP T IO N The PS2021 is an optically coupled Isolator containing a G aA s light emitting diode and an NPN silicon photo transistor. FEA TU RES

2N3738

Abstract: 3302N
Contextual Info: * 2 N 3738 NPN SILICON TR AN SISTO R , D IFFU SED M ESA TRANSISTOR NPN SILICIUM, MESA DIFFUSE Preferred device Dispositif recommandé L F large signal power amplification Amplification B F grands signaux de puissance 225 V v C EO High voltage switching Commutation haute tension

transistor bc238

Abstract: BC239 NPN transistor BC238 datasheet transistor bc237 bc337 BC237 BC238 BC239 BC238 NPN transistor download datasheet BC239 NPN transistor download datasheet 15KHZ
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio

Contextual Info: N AUER PHILIPS/DISCRETE bbS3T31 0015273 0 ObE » RZ3135B50W T -33-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 3,1 to 3,5 GHz.

transistor NEC D 822 P

Abstract: transistor NEC B 617 NEC D 822 P NEC B 617 NEC D 809 50/transistor NEC D 822 P NEC D 809 F P1093 4435 power ic
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 HIGH NPN EPITAXIAL SILICON TRANSISTOR F R E Q U E N C Y LOW D IS T O R T IO N A M P L IF IE R FEATURES • PACKAGE DIMENSIONS High gain in millimeters | S 21 | 2 = 12 dB TYP, @ f = 1 GHz, V c e = 10 V , Ic = 20 mA

Contextual Info: N E C E L EC T RO NI C S INC 3QE D • b4E7S2S 0 0 2 ^ 4 0 fl ■ 3 PHOTO COUPLER PS2021 PHOTO C O U P LER High Isolation Voltage Single Transistor — n ep o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a G aAs light emitting diode and an NPN silicon photo transistor.

RX1011B250Y

Contextual Info: DEVELOPMENT ObE data D b b S3 T3 1 N AME R 0015175 PH ILIPS/D ISCRETE nr- PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor intended for use in common-base, class-C broadband pulse power amplifiers operating in the 1.03 to 1.09 GHz frequence range.

BC238 NPN transistor download datasheet

Abstract: lowest noise audio NPN transistor bc237 bc337 bc239 BC239 NPN transistor download datasheet BC238 TRANSISTOR W2 bc238 data sheet BC238 datasheet transistor bc237 datasheet
Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS BC237 A, B, C BC238 A, B, C BC239 B, C TO-92 Plastic Package General Purpose Transistor, Best Suited For use In Driver Stages Of Audio

RX1214B300Y

Contextual Info: N AMER PH ILIP S/D ISCRETE ObE D ^53131 GOlSlô'ï □ • RX1214B300Y t r ^ 3 3 - / r PULSED MICROWAVE POWER TRANSISTOR NPN silicon microwave power transistor fo r use in common-base, class-C wideband amplifiers operating under pulsed conditions. It is recommended for L-band radar applications.

nec ps2021

Abstract: T-AV83 PS2021 1581m
Contextual Info: N E C ELECTRONICS INC 3QE D • T - W* f 3 b4E7S2S 002=1^40 fl ■ PHOTO COUPLER P S 2021 PHO TO COUPLER High Isolation Voltage Single Transistor — n e p o c s e r ie s — D E S C R IP T IO N The PS2021 is an optically coupled isolator containing a GaAs light em itting diode and an NPN silicon photo transistor.

c 2579 power transistor

Abstract: c 2579 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Frequency Transistor NPN Silicon M PS5179 M otorola Preferred Device COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating C ollector-Em ltter Voltage Symbol Value Unit Vdc Vdc VCEO 12 C ollector-B ase Voltage VCBO 20 E m itter-B ase Voltage

samsung tv

Abstract: 4142
Contextual Info: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

y 331 Transistor

Contextual Info: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*

KSD569

Abstract: KSB601 KSB708 KSD560 KSD568 C 3311 transistor
Contextual Info: ^SAMSUNG S E M I C O N D U C T O R m e I NC d I oaoTboa NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR KSD560 T ~ LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE • Complement to KSB601 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

RZ2833B15W

Contextual Info: N AMER PHILIPS/DISCRETE Oh E D UÈ t a b 's T ^ l X 0D1SE43 S • “ T - 33-13 MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power am plifier, operating in the 2.8 to 3.3 GHz frequency range.

Contextual Info: SAMSUNG S E M IC O N D U C T O R INC KSC1098 1ME D | 7^1.4142 0007S33 4 NPN EPITAXIAL SILICON TRANSISTOR ' - 3 5 - c n LOW FREQUENCY AMPLIFIER • • • • Complement to KSA636 Collector-Base Voltage Vcao=7UV Collector Current lc =2 A Collector Dissipation Pc=10W Tc=25<,C

transistor PT 4500

Contextual Info: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .