NEZ5964 Search Results

NEZ5964

Abstract: NEZ5964-3
Contextual Info: 35 W C-BAND POWER GaAs MESFET NEZ5964-35E FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 35 W TYP PACKAGE OUTLINE T-65 • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 40% TYP 0.5±0.1 C 1.0, 4 PLACES SOURCE GATE • INTERNALLY MATCHED (IN/OUT)

sk 0632

Contextual Info: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • OUTPUT POWER AND EFFICIENCY HIGH P out 18W 42.5 dBm Typ PidB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/40L

Contextual Info: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET O UTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ P id B for NEZ5964-15D /15D D 9W (39.5 dBm) Typ P id B for NEZ5964-8D/8D D 4.5W (36.5 dbm) Typ P id B for NEZ5964-4D/4DD

Contextual Info: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1dB Output Power at PIdB1 IDSQ = 0.8A, (RF Off IDSQ = 1.6A IDSQ = 4.0A

sg 3425

Abstract: EZ59644
Contextual Info: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ P idB for NEZ5964-15D/15DD 9W (39.5 dBm) Typ PidB for NEZ5964-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/4DD

Contextual Info: NEZ5964-15D NEZ5964-15DD NEZ5964-8D NEZ5964-8DD NEZ5964-4D NEZ5964-4DD C-BAND POWER GaAs MESFET FEATURES OUTPUT POWER AND EFFICIENCY vs. INPUT POWER • HIGH P out 18W 42.5 dBm Typ P i d B for NEZ5964-15D/15DD 9W (39.5 dBm) Typ P i d B for NEZ5964-8D/8DD

nez5964-35e

Contextual Info: PRELIMINARY DATA SHEET 35 W C-BAND POWER GaAs MESFET NEZ5964-35E FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 35 W TYP PACKAGE OUTLINE T-65 • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 40% TYP • INTERNALLY MATCHED (IN/OUT)

NEZ5964-15D

Abstract: NEZ5964-15DL NEZ5964-4D NEZ5964-4DL NEZ5964-8D NEZ5964-8DL 8d 139 231
Contextual Info: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1dB Output Power at PIdB1 IDSQ = 0.8A, (RF Off IDSQ = 1.6A IDSQ = 4.0A

ne6500278

Abstract: NEZ1414 NES2527B-30 NE1280100 NE6501077 NE85001 NE850R5 NES1821B-30 NES1821P-50
Contextual Info: Power GaAs FET Selection Graph Devices by Power by Frequency 49.0 NEZ4450-15D/15DL NES1821P-50 47.0 NES1821B-30 NEZ5964-15D/15DL NES2527B-30 NEZ6472-15D/15DL 45.0 NEZ3642-15D/15DL NEZ7785-15D/15DL 43.0 NEZ7177-8D/8DL 41.0 NEZ3642-8D NEZ4450-8D/8DL NEZ7785-8D/8DL

NEZ5964-8DL

Abstract: NEZ5964-4D NEZ5964-4DL 901 704 16 08 55 NEZ5964-15D NEZ5964-15DL NEZ5964-8D 1084 1016 dL
Contextual Info: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • • • • • • ELECTRICAL CHARACTERISTICS TC PART NUMBER P1dB Output Power at PIdB1 IDSQ = 0.8A, (RF Off IDSQ = 1.6A IDSQ = 4.0A

Z5964-4

Abstract: Z5964-8D 1084 1016 dL z5964-4d Z5964-15 Z5964 5964-8D
Contextual Info: N E Z5964-15D N E Z5964-15D L N E Z5964-8D N E Z 5964-8D L N E Z5964-4D N E Z 5964-4D L C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • HIGH OUTPUT POWER AND EFFICIENCY vs. INPUT POWER P out 18W 42.5 dBm Typ P idB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SK2396

Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
Contextual Info: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数

nf025

Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
Contextual Info: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

Contextual Info: NEZ4450-15D NEZ4450-15DD NEZ4450-8D NEZ4450-8DD NEZ4450-4D NEZ4450-4DD C-BAND POWER GaAs MESFET OUTPUT POWER AND EFFICIENCY FEATURES HIGH P o u t 18W 42.5 dBm Typ PidB for NEZ4450-15D/15DD 9W (39.5 dBm) Typ PidB for NEZ4450-8D/8DD 4.5W (36.5 dbm) Typ PidB for NEZ4450-4D/4DD

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

nec 2571 4 pin

Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.

nec 2571

Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band

GaAs MESFET

Abstract: NES2527B-30 MESFET NE6500278 NEL2000 NES1821B-50 NEZ1011 NEZ1414 NEZ5964
Contextual Info: Power NEW! NES2527B-30 GaAs MESFET • 30 Watts POUT, 13.0 dB Gain • 2.1–2.7GHz Wideband Operation PCS and Cellular Base Station NEW! NES1821B-50 GaAs MESFET Wireless Local Loop and Wireless Cable MMDS • 47.0 dBm POUT @ 1.9GHz • 11.0 dB Linear Gain

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER G aAs FET N-CHANNEL G aAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The N EZ Series of microwave power G aAs FET s offer high output power, high gain and high efficiency at C-band

uPC2581

Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8