NEZ1414 Search Results

NEZ1414-3E

Contextual Info: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

NEZ1414-8E

Abstract: 39.5dB GaAs FET
Contextual Info: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MES FET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5dB (MIN) PACKAGE OUTLINE T-61 • HIGH GAIN: 6.5 dB TYP • HIGH RELIABILITY GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • CLASS A OPERATION

16850

Contextual Info: 2 W 14 GHz INTERNALLY NEZ1414-2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES • HIGH OUTPUT POWER: 2 W MIN PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB MIN 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGING • INTERNALLY MATCHED FOR OPTIMUM

Contextual Info: 4 W 14 GHz INTERNALLY NEZ1414-4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­

NEZ1414-4E

Contextual Info: 4 W 14 GHz INTERNALLY NEZ1414-4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

ne900075

Abstract: NE9000
Contextual Info: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27

Contextual Info: PRELIMINARY DATA SHEET 8 W 14 GHz INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ1414-8E Units in mm • HIGH OUTPUT POWER: 39.5 dBm MIN PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.0 dB MIN • HIGH EFFICIENCY: 23% TYP GATE SIDE • INDUSTRY STANDARD PACKAGING

Contextual Info: 5 W 14 GHz INTERNALLY MATCHED POWER GaAs MESFET FEATURES NEZ1414_5E OUTLINE DIMENSIONS U n its in m m • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 + 0.15 • INDUSTRY STANDARD PACKAGING

California Eastern Laboratories OR NEC

Abstract: NEZ1414-5H T-78
Contextual Info: PRELIMINARY DATA SHEET 5 W Ku-BAND POWER GaAs HJ-FET NEZ1414-5H FEATURES OUTLINE DIMENSIONS Units in mm • CLASS A OPERATION PACKAGE OUTLINE X-17 • HIGH OUTPUT POWER: 37.5 dBm TYP • HIGH LINEAR GAIN: 9.0 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 36% TYP

NEZ1414-5E

Contextual Info: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

tc 2608

Contextual Info: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

Nec K 872

Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: 2 W 14 GHz INTERNALLY MATCHED POWER GaAs MESFET FEATURES NEZ1414_2E OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 2 W MIN PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB MIN • HIGH EFFICIENCY: 30% TYP | 8 .2 5 ± 0 .1 5 • INDUSTRY STANDARD PACKAGING • INTERNALLY MATCHED FOR OPTIMUM

NEC1011-5E

Abstract: NEZ1011-5E NEZ1414-5E T-78
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

99419

Contextual Info: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

NEZ1414-5E

Abstract: C10130
Contextual Info: 5 W 14 GHz INTERNALLY NEZ1414-5E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

NEZ1414-3E

Abstract: semiconductors 3E
Contextual Info: 3 W 14 GHz INTERNALLY NEZ1414-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.5 dB TYP • HIGH EFFICIENCY: 30% TYP 8.25 ± 0.15 • INDUSTRY STANDARD PACKAGING

NEZ1414-8E

Contextual Info: 8 W 14 GHz INTERNALLY NEZ1414-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP • HIGH EFFICIENCY: 25% TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1

str 0765

Abstract: gi 9540 STR W 6750 f STR X 6750 NEC D 70 9360 STR 6750 str r 4440 STR W 6750
Contextual Info: 4 W 14 GHz INTERNALLY NEZ1414 4E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIG H O U TPU T PO W ER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 7.0 dB TYP • HIGH EFFICIENC Y: 30% TYP • IN D U STR Y STA N D A R D PACKAG ING

str 2652

Contextual Info: 2 W 14 GHz INTERNALLY NEZ1414_2E MATCHED POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES HIGH O U TPU T POW ER: 2 W MIN PACKAGE OUTLINE X-17 HIG H LINEAR GAIN: 7.0 dB MIN HIG H EFFICIENC Y: 30% TYP 8 .2 5 ± 0 .1 5 IN D U STR Y S T A N D A R D PACKAG ING IN TER N A LLY M ATCH ED FOR O PTIM UM