NEZ1011 Search Results

x-band microwave fet

Abstract: NEZ1011-2E 17148
Contextual Info: 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

NEZ1011-4E

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NEZ1011-4E 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-4E is power GaAs FET which provides high gain, high efficiency and high output power in X-band. 8.25 ± 0.15

x-band microwave fet

Abstract: NEZ1011-8E pt 2399
Contextual Info: 8 W X-BAND INTERNALLY NEZ1011-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1 • HIGH EFFICIENCY: 25% TYP

Nec K 872

Abstract: 102528 NEC 2905 139492 NEZ1414-2E T-78 NEZ1011-2E 72248 121-138 26433
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-2E, NEZ1414-2E 2W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

x-band power TR

Contextual Info: PRELIMINARY DATA SHEET 4 W X-BAND POWER GaAs FET N-CHANNEL GaAs MESFET FEATURES OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 36.5 dBm TYP NEZ1011-4E Units in mm PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.0 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

Contextual Info: PRELIMINARY DATA SHEET 2 W X-BAND INTERNALLY NEZ1011-2E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS HIGH OUTPUT POWER: 34 dBm TYP Units in mm PACKAGE OUTLINE X-17 HIGH LINEAR GAIN: 8.5 dB TYP HIGH EFFICIENCY: 30% TYP INDUSTRY STANDARD PACKAGE INTERNALLY MATCHED FOR OPTIMUM

554-1 MAG

Contextual Info: 8 W X-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES NEZ1011-8E OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 39.5 dBm TYP Units in mm PACKAGE O UTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE • HIGH EFFICIENCY: 25% TYP • INDUSTRY STANDARD PACKAGE

NEC1011-5E

Abstract: NEZ1011-5E NEZ1414-5E T-78
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

99419

Contextual Info: _ DATA SHEET_ _ N-CHANNEL GaAs MESFET NEZ1011-4E, NEZ1414-4E 4W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ101.1-4E and NEZ1414-4E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-5E, NEZ1414-5E 5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

Contextual Info: _ DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

NEZ1011-8E

Contextual Info: PRELIMINARY DATA SHEET 8 W X-BAND INTERNALLY NEZ1011-8E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 39.5 dBm TYP PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE INDICATOR DEPRESSION 0.5 ± 0.1

NEZ1011-3E

Abstract: NEZ1414-3E T-78 1981 3E
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-3E, NEZ1414-3E 3W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-3E and NEZ1414-3E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with

62095

Contextual Info: DATA SHEET_ N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are.power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal'input and output matching enables guaranteed performance to be achieved with

Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 0 1 1 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.

x-band microwave fet

Abstract: NEZ1011-3E
Contextual Info: 3 W X-BAND INTERNALLY NEZ1011-3E MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 34 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INPUT AND OUTPUT INTERNALLY MATCHED FOR

NEZ1011-5E

Abstract: T-78 138312
Contextual Info: 5 W X, Ku-BAND POWER GaAs FET NEZ1011-5E FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 37.0 dBm TYP PACKAGE OUTLINE T-78 • HIGH LINEAR GAIN: 8.0 dB TYP 8.25 – 0.15 • HIGH EFFICIENCY: 30% TYP • INPUT AND OUTPUT INTERNALLY MATCHED

NEZ1011-8E

Contextual Info: DATA PRODUCT SHEET PRELIMINARY INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1011-8E is power GaAs FET which provides high 0.5±0.05 1.5 CHAMFER 4 PLACES gain, high efficiency and high output power in Ku-band.

Contextual Info: PRELIMINARY DATA SHEET 8 W X-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES NEZ1011-8E OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 39.5 dBm TYP Units in mm PACKAGE OUTLINE T-61 • HIGH LINEAR GAIN: 6.5 dB TYP GATE SIDE • HIGH EFFICIENCY: 25% TYP • INDUSTRY STANDARD PACKAGE

NEZ1011-4E

Contextual Info: PRELIMINARY DATA SHEET 4 W X-BAND POWER GaAs FET NEZ1011-4E N-CHANNEL GaAs MESFET FEATURES OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 36.5 dBm TYP Units in mm PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.0 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

Contextual Info: PRELIMINARY DATA SHEET 2 W X-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS • HIGH OUTPUT POWER: 34 dBm TYP NEZ1011-2E Units in mm PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.5 dB TYP • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

FET 6626 data

Abstract: 16298 x-band microwave fet NEZ1011-4E
Contextual Info: 4 W X-BAND POWER GaAs FET NEZ1011-4E N-CHANNEL GaAs MESFET FEATURES OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 36.5 dBm TYP PACKAGE OUTLINE X-17 • HIGH LINEAR GAIN: 8.0 dB TYP 8.25 ± 0.15 • HIGH EFFICIENCY: 30% TYP • INDUSTRY STANDARD PACKAGE

nec 258

Abstract: NEZ1011-8E NEZ1414-8E
Contextual Info: DATA SHEET N-CHANNEL GaAs MESFET NEZ1011-8E, NEZ1414-8E 8W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with