NEC MMIC Search Results

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi

UAA 1006

Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
Contextual Info: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH

NEC 10F

Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
Contextual Info: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.

UPC1670C

Abstract: 574 nec UPC1670 UPC1668 UPC1668B UPC1668C UPC1669 UPC1669B UPC1669C UPC1670B
Contextual Info: NEC/ SbE D CALIFORNIA NEC • NECC 1,427414 0002b3fl Û37 UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES HIGH ISOLATION SILICON MMIC IF AMPLIFIERS OUTLINE DIMENSIONS FEATURES • HIGH ISOLATION Units in mm OUTLINE B08 • LOW INPUT/OUTPUT RETURN LOSS 1.27±0.1

cd 2003 gp

Abstract: UPC1659G uPC1659 UPC1659A UPC1659B UPC165 Monolithic Amplifier NEC pc1659
Contextual Info: NEC/ SbE D CALIFORNIA NEC • b 4 2 7 4 m DDGSbE? TS1 MN EC C T - ^ OUTLINE DIMENSIONS • W IDE-BAND PERFO RM AN CE UPC1659A/B: 0.6 to 2.3 GHz (UPC1659G: 0.6 to 1.75 GHz) . . UPC1659A UPC1659B UPC1659G 1.5 GHz BANDWIDTH SILICON MMIC AMPLIFIER FEATURES

Contextual Info: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1

NEC Ga FET marking L

Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a
Contextual Info: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima

UPG100B

Abstract: UPG100 UPG100P power amplifier s band ghz mhz Low Noise Amplifier 0.5 - 3.0 GHz
Contextual Info: I NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 + 0.1 • LOW IMOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz Units in mm 1.27 ± 0-1 0 A {LEAD S 1,3,5,7)

NEC uPA101G

Abstract: UPA101B UPA101G
Contextual Info: NEC/ CALIFORNIA 5bE D NEC b4274m 00GSS7S ÖS3 * N E C C UPA101B UPA101G TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: 9 GHz Single Transistors (Units in mm) OUTLINE BS14 T0PVIEW <^° 8 • OUTSTANDING hFE LINEARITY

upc8236t6n

Abstract: UPC8236 GPS Integrated Circuits PC8236T6N design power amplifier for GPS
Contextual Info: RF Applications Engineering Technical Note PC8236T6N Three Circuit Configurations For GPS Application o Introduction o Circuit Description o Performance Data Introduction NEC’s uPC8236T6N is a silicon germanium carbon SiGe:C MMIC designed as low noise

nec vco

Abstract: P1314
Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ PG 139GV L-BAND DPDT MMIC SWITCH DESCRIPTION The ¿¿PG139GV is L-Band Double Pole, Double Throw (DPDT switch developed for digital cellular or cordless telephone and PCS applications.

Prescalers

Abstract: UPB582C uPG506 UPG503 UPG506P UPG502 uPB584 UPB584G UPB585G AN1014
Contextual Info: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an

Prescalers

Abstract: UPB585 uPG506 UPB584G UPB581 UPB582C UPG506B AN1014 UPB582 UPB584
Contextual Info: California Eastern Laboratories AN1014 APPLICATION NOTE Suppression of Prescaler Self-Oscillation NEC/CEL offers a broad range of silicon and GaAs MMIC prescalers. Prescalers are integrated circuits designed to generate an output signal at a frequency which is an

NEC DIE BONDER

Abstract: die-attach
Contextual Info: USER’S MANUAL NEC USER’S MANUAL FOR MICROWAVE DEVICE CHIP HANDLING [Silicon Transistors, GaAs FETs, H J-FETs, GaAs MMICs] 1. INTRODUCTION In recent years, m iniaturizing the dimensions o f electronic devices and improving device performance have been extensively

UPC8182B

Abstract: GET-BE-0006
Contextual Info: .' . . . , , I GET-BE-OOO61/4 "'-.I . Qualification Test Report Si MMIC useon UHSO Process Prepared on :June26,2003 i£.( fJi$; by: YASUSHISATOH Assistant Manager Approved by : J. f~~.().Io-'J"~TOSHIAKI YOKOKA W A Manager Reliability and QC Department NEC CompoundSemiconductor

smd+2tx

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ iP G 13 9 G V L-BAND DPDT MMIC SWITCH DESCRIPTION The ^¡PG139GV is L-Band Double Pole, Double Throw DPDT switch developed for digital cellular or cordless telephone and PCS applications.

Contextual Info: NEC 900 MHz MIXER, OSCILLATOR SILICON MMIC UPC1685B UPC1685G OUTLINE DIMENSIONS FEATURES Units in mm • W ID E-BAN D OPERATION: DC to 890 MHz OUTLINE BF08 • SMALL PACKAGE 7.0±0.5 • • DOUBLE BALANCED MIXER: Low Distortion Low Oscillator Radiation

uPC1653

Contextual Info: SILICON MMIC NEC UPC1653A/P General Purpose Wide-Band Amplifier FEATURES DESCRIPTION AND APPLICATIONS • BROAD FREQUENCY RESPONSE : 1300 MHz TYP AT 3 dB DOWN The UPC1653 Silicon Monolithic IC is designed as a wideband amplifier covering the HF through UHF bands.

Contextual Info: NEC”LOW POWER CONSUMPTION UPC2714T UPC2715T SILICON MMIC AMPLIFIER FEATURES_ • LOW POWER CONSUMPTION: 15 mW Vcc = 3.4 V, Icc - 4.5 mA • HIGH POWER GAIN: 20 dB (UPC2715T) • WIDE FREQUENCY RESPONSE: 2 GHz (UPC2714T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN

Contextual Info: DATA SHEET NEC BIPOLAR ANALOG INTEGRATED CIRCUIT SILICON MMIC 2.0 GHz FREQUENCY UPCONVERTER FOR CELLULAR TELEPHONE DESCRIPTION The ¿iPC8163TB is a silicon monolithic integrated circuit designed as frequency upconverter for cellular telephone transmitter stage. The /¿PC8163TB has improved Intermodulation performance and smaller package.

1 henry INDUCTOR

Abstract: 2 henry INDUCTOR an 17827 UPC27xxT AN1019 UPC2771T
Contextual Info: California Eastern Laboratories AN1019 APPLICATION NOTE Selecting Pull-Up Inductors For UPC27xxT Amplifiers With Open Collector Outputs NEC offers a line of silicon MMIC amplifiers with open collector outputs. These amplifiers require an external pullup inductor to supply bias to the output stage. The advantage

UPG2214TK

Abstract: UPG2179TB UPG2301TQ LDMOS NEC amplifer UPD5702TU CC156
Contextual Info: Class 1 Power Amplifiers for Bluetooth NEW! UPG2214TK or UPG2179TB GaAs Switch IC I NEC Class One Silicon LDMOS or GaAs HBT Power Amplifier RFIC Baseband Q VCC NEW! Low Cost Silicon LDMOS UPD5702TU MMIC Power Amplifier • Output Power = 21dBm • Two Stage Device

UPC1670C

Abstract: pour UPC1669 UPC1670
Contextual Info: NEC HIGH ISOLATION SILICON MMIC IF AMPLIFIERS FEATURES OUTLINE DIMENSIONS • HIGH ISOLATION UPC1668 SERIES UPC1669 SERIES UPC1670 SERIES Units in mm OUTLINE B08 1.2 7 ± 0.1 • LOW INPUT/OUTPUT RETURN LOSS 1. 27 ± 0.1 • LOW IMD DESCRIPTION AND APPLICATIONS

UPC1675G

Abstract: UPC1675B uPC1675 UPC1675P mmic case styles
Contextual Info: NEC UPC1675B UPC1675G UPC1675P 1.9 GHz BANDWIDTH GENERAL PURPOSE SILICON MMIC AMPLIFIER OUTLINE DIM ENSIONS FEATURES Units in mm OUTLINE 39 (SOT-143) • WIDE BANDWIDTH: 1900 MHz TYP at 3 dB Point for UPC1675G 2100 MHz TYP at 3 dB Point for UPC1675B, UPC1675P