NE80 Search Results

NE80

Contextual Info: 1 2 3 4 5 6 7 8 9 A A Pos. 3 Term 1, 2 Pos. 2 Pos. 1 (Term 2, 3) B B A C C A Ø Ø D E F Series Function (Pos. 1, Pos. 2, Pos. 3) XXX N=On 2 position switch O=Off (Pos. 1, 3): NN, NM M=Momentary on 3 position switch: NON, MOM, NOM SWT NE80 Switch Sealed

ne800299

Abstract: NE8002 NE800196 NE8001 NE800199 NE800200 NE800296 40MAG NE800
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET NE8001 SERIES NE8002 SERIES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, Vds = 9 V, f = 7.2 GHz BROADBANDCAPABIUTY AVAILABILITY: Hermetic Packages Chip PROVEN RELIABILITY

Contextual Info: NE800898-7H Transistors N-Channel UHF/Microwave JFET V BR DSS (V)20 V(BR)GSS (V)-14 I(D) Max. (A)3.2 P(D) Max. (W)20 Maximum Operating Temp (øC)175õ I(DSS) Min. (A)1.8 I(DSS) Max. (A)3.2 @V(DS) (V) (Test Condition)2.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.480mÂ

ne8004 FET

Abstract: ne800495-6 NE800495 NE8004 ne0800 NE8004956
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S2HVS FREQUENCY CLASS A OPERATION HIGH EFFICIENCY: t]A D D ;> 35% TYP BROADBAND CAPABILITY AVAILABILITY: Chip Hermetic Package m •o PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES CO PROVEN RELIABILITY

3- 5 Position blade Switch

Abstract: 2 way switch
Contextual Info: 1 2 3 4 5 6 7 8 9 A A Pos. 3 Term 2, 3; 5, 6 Pos. 2 (Term 2, 3, 5, 4 Pos. 1 (Term 1, 2; 4, 5) B B C C D D Series Function (Pos. 1, Pos. 2, Pos. 3) SWT NE80D XXX Switch Sealed toggle N=On 2 position switch type O=Off (Pos. 1, 3): NN, NM M=Momentary on 3 position switch:

ne8002

Abstract: NE800296 NE800199 NE800196 NE800299
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET nesooi series NE8002series FEATURES • NE800196 PidB = 26 dBm, GidB = 8.5 dB, V d s = 9 V , f = 7.2 GHz • NE800296 PidB = 29 dBm, GidB = 8 dB, Vos = 9 V, f = 7.2 GHz • BROADBAND CAPABILITY • AVAILABILITY: Hermetic Packages

NE800495-4

Abstract: NE8004 NE800495-5 NE800495-7
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES

NE8004

Abstract: NE800495-4
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •

NE8004

Abstract: NE800 DIODE 3d ND4131-3A ND4131-3D GaAs MESFET NEC 45L package diode
Contextual Info: N E C/ 1SE D CALIFORNIA □427414 0001=141 fi T~01'07 NEC C-BAND POWER GaAs MESFET (2 WATTS NE8004 SERIES PHYSICAL DIMENSIONS FEATURES • HIGH SENSITIVITY (Units In mm) 3A PACKAGE* • LOW DRIVE L EV E L 4.0 MIN. - • S M A L L SIZE •— 4 4.0 MIN.

NE800296

Abstract: ne800299 NE8002 NE8001 NE800199 NE800196 NE800
Contextual Info: C-BAND MEDIUM POWER GaAs MESFET n es o o i s e r ie s NE8002SER,ES FEATURES NE800196 PidB = 26 dBm, GidB = 8.5 dB, Vos = 9 V, f = 7.2 GHz NE800296 PidB = 29 dBm, GidB = 8 dB, V ds = 9 V, f = 7.2 GHz BROADBAND C APABILITY AVAILABILITY: CO Hermetic Packages

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

Contextual Info: GS832018/32/36T-xxxV 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Functional Description ct Flow Through/Pipeline Reads The function of the Data Output register can be controlled by

uPGA478

Abstract: NE80546PG0801M Intel Pentium 4 531 uPGA-478 "pentium 4 Processors" PGA478 Intel Pentium 4 Processors lga 775 socket details intel pentium 4 HH80547PG0961MM
Contextual Info: Product Brief Intel Pentium® 4 Processors with Hyper-Threading Technology Embedded Computing Intel® Pentium® 4 Processors with Hyper-Threading Technology for Embedded Computing Product Overview Intel® Pentium® 4 processors with Hyper-Threading Technology†

NE800296

Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
Contextual Info: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in

intel lga775

Abstract: 775 PC MOTHERBOARD SERVICE MANUAL 865g Motherboard bx80547pg3400 pinout diagram for LGA775 processor socket core ich8r 946gz PPGA478 945G MOTHERBOARD CIRCUIT diagram lga775 915p
Contextual Info: Intel Pentium® 4 Processors 570/571, 560/561, 550/551, 540/541, 530/531 and 520/521∆ Supporting Hyper-Threading Technology1 Datasheet On 90 nm Process in 775-land LGA Package and supporting Intel® Extended Memory 64 TechnologyΦ May 2005 Document Number: 302351-004

881-1 nec

Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Contextual Info: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S

AA59569R36S0500

Abstract: AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781
Contextual Info: Braids, Cables & Strands Technical Information Bare, Tinned, & Silver-plated Copper . 2 & 3 Standard & Extrawide Braided Copper . 4 & 5 Extraflexible, Round Braided Copper . 5 & 6

D078

Abstract: FR 9120n E8870 Intel d101 motherboard diagram schematic 9150N intel schematics Intel Itanium
Contextual Info: Dual-Core Intel Itanium® Processor 9000 and 9100 Series Dual-Core Intel® Itanium® Processor 1.6 GHz with 24 MB L3 Cache 9050 Dual-Core Intel® Itanium® Processor 1.6 GHz with 18 MB L3 Cache 9040 Dual-Core Intel® Itanium® Processor 1.6 GHz with 8 MB L3 Cache 9030

uPD3599

Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

NE8002

Abstract: NE800196 NE800 E8500 NE9001
Contextual Info: Power GaAs FET Selection Guide C-BAND INTERNALLY MATCHED DEVICES Typical Specifications @ T a = 25°C U n ta rlty P a m rtO a M Linear Gain dB PowBf Added Efficiency Frequency R an g* (GHz) (dBm) N E Z 3 6 4 2 -1 5 D 3 .6 to 4.2 42.5 10.0 37 N E Z 3 6 4 2 -8 D

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Catalog

Abstract: 100352 IEC 158-1 VDE 0660
Contextual Info: PRODUCT SELECTION GUIDE CUSTOM ROPE-LAY CABLESTOLL BRAIDING FLAT WIRE BRAIDING RANDS G BRAID-REINFORCED CAPILLARY TUBING G SINGLE-THICKNESS BRAIDS SCOPE BRAIDS AIDING BRAID-REINFORCED TUBING AIDS SINGLE-THICKNESS BRAIDS BRAID-REINFORCED TUBING BRAIDS REINFORCED CABLES AND STRANDS